Verfahren für die Gerichtete Selbstorganisation und damit Hergestellte Schichtstrukturen

    公开(公告)号:DE112010004884T5

    公开(公告)日:2012-09-27

    申请号:DE112010004884

    申请日:2010-11-26

    Applicant: IBM

    Abstract: Ein Verfahren zum Herstellen einer Schichtstruktur, die ein selbstorganisiertes Material umfasst, umfasst: Aufbringen einer nichtvernetzenden Fotolackschicht auf ein Substrat; strukturierendes Exponieren der Fotolackschicht gegenüber einer ersten Strahlung; gegebenenfalls Aufheizen der exponierten Fotolackschicht; Entwickeln der exponierten Fotolackschicht durch ein erstes Entwicklungsverfahren mit einem wässrigen alkalischen Entwickler, um eine strukturierte Ausgangs-Fotolackschicht zu bilden; fotochemisches, thermisches und/oder chemisches Behandeln der strukturierten Ausgangs-Fotolackschicht, um so eine behandelte strukturierte Fotolackschicht zu bilden, die nichtvernetzten behandelten Fotolack, der auf einer ersten Substratoberfläche aufgebracht ist, umfasst; Gießen einer Lösung eines orientierungslenkenden Materials in einem ersten Lösungsmittel auf die behandelte strukturierte Fotolackschicht und Entfernen des ersten Lösungsmittels, um eine orientierungslenkende Schicht zu bilden; Aufheizen der orientierungslenkenden Schicht, um einen Teil des orientierungslenkenden Materials wirkungsvoll an eine zweite Substratoberfläche zu binden; Entfernen von wenigstens einem Teil des behandelten Fotolacks und gegebenenfalls von nichtgebundenem orientierungslenkenden Material durch ein zweites Entwicklungsverfahren, um so eine Vorstruktur für die Selbstorganisation zu bilden; gegebenenfalls Aufheizen der Vorstruktur; Gießen einer Lösung eines selbstorganisationsfähigen Materials, das in einem zweiten Lösungsmittel gelöst ist, auf die Vorstruktur und Entfernen des zweiten Lösungsmittels; und Selbstorganisierenlassen des gegossenen Materials mit optionalem Aufheizen und/oder Tempern, um so die Schichtstruktur zu bilden, die das selbstorganisierte Material umfasst.

    METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM
    2.
    发明申请
    METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM 审中-公开
    方向自组装方法和形成的层状结构

    公开(公告)号:WO2011080016A2

    公开(公告)日:2011-07-07

    申请号:PCT/EP2010068318

    申请日:2010-11-26

    CPC classification number: G03F7/0002 B82Y10/00 B82Y40/00

    Abstract: A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material.

    Abstract translation: 形成包括自组装材料的层状结构的方法包括:在基底上设置非交联光致抗蚀剂层; 将光致抗蚀剂层图案化地暴露于第一辐射; 可选地加热曝光的光致抗蚀剂层; 在第一显影工艺中用含水碱性显影剂显影曝光的光致抗蚀剂层,形成初始图案化的光致抗蚀剂层; 以光学,光学和/或化学方式处理初始图案化的光致抗蚀剂层,从而形成经处理的图案化的光刻胶层,其包含设置在第一衬底表面上的非交联处理的光致抗蚀剂; 在经处理​​的图案化光刻胶层上浇铸取向控制材料在第一溶剂中的溶液,并除去第一溶剂,形成取向控制层; 加热所述取向控制层以有效地将所述取向控制材料的一部分粘合到第二基板表面; 在第二显影过程中除去至少一部分经处理的光致抗蚀剂和任选的任何未结合的取向控制材料,从而形成用于自组装的预图案; 可选地加热预图案; 将能够自组装的溶解在第二溶剂中的材料的溶液浇铸在预图案上并除去第二溶剂; 并且允许铸造材料通过任选的加热和/或退火自组装,从而形成包括自组装材料的层状结构。

    3.
    发明专利
    未知

    公开(公告)号:AT399336T

    公开(公告)日:2008-07-15

    申请号:AT05804583

    申请日:2005-10-18

    Applicant: IBM

    Abstract: A method (and resultant structure) of forming a plurality of masks, includes creating a reference template, using imprint lithography to print at least one reference template alignment mark on all of a plurality of mask blanks for a given chip set, and printing sub-patterns on each of the plurality of mask blanks, and aligning the sub-patterns to the at least one reference template alignment mark.

    Methods of directed self-assembly and layered structures formed therefrom

    公开(公告)号:GB2485941A

    公开(公告)日:2012-05-30

    申请号:GB201203971

    申请日:2010-11-26

    Applicant: IBM

    Abstract: A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material.

    Methods of directed self-assembly and layered structures formed therefrom

    公开(公告)号:GB2485941B

    公开(公告)日:2014-05-21

    申请号:GB201203971

    申请日:2010-11-26

    Applicant: IBM

    Abstract: A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.

Patent Agency Ranking