DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS USING SEGMENTED PREPATTERNS
    3.
    发明申请
    DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS USING SEGMENTED PREPATTERNS 审中-公开
    使用SEGMENTED PREPATTERNS的嵌段共聚物的方向自组装

    公开(公告)号:WO2010133422A3

    公开(公告)日:2011-05-12

    申请号:PCT/EP2010055412

    申请日:2010-04-23

    Abstract: An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

    Abstract translation: 例如使用光刻法形成衬底中的开口,其中开口具有侧壁,其横截面由轮廓和凸形的部分给出。 例如,开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻,在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上,并允许自组装。 在开口中形成离散的分离的区域,其被去除以形成孔,其可以被转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物(和任何添加剂)在没有任何侧壁的情况下自组装就会发生。

    METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM
    4.
    发明申请
    METHODS OF DIRECTED SELF-ASSEMBLY AND LAYERED STRUCTURES FORMED THEREFROM 审中-公开
    方向自组装方法和形成的层状结构

    公开(公告)号:WO2011080016A2

    公开(公告)日:2011-07-07

    申请号:PCT/EP2010068318

    申请日:2010-11-26

    CPC classification number: G03F7/0002 B82Y10/00 B82Y40/00

    Abstract: A method of forming a layered structure comprising a self-assembled material comprises: disposing a non-crosslinking photoresist layer on a substrate; pattern-wise exposing the photoresist layer to first radiation; optionally heating the exposed photoresist layer; developing the exposed photoresist layer in a first development process with an aqueous alkaline developer, forming an initial patterned photoresist layer; treating the initial patterned photoresist layer photochemically, thermally and/or chemically, thereby forming a treated patterned photoresist layer comprising non-crosslinked treated photoresist disposed on a first substrate surface; casting a solution of an orientation control material in a first solvent on the treated patterned photoresist layer, and removing the first solvent, forming an orientation control layer; heating the orientation control layer to effectively bind a portion of the orientation control material to a second substrate surface; removing at least a portion of the treated photoresist and, optionally, any non-bound orientation control material in a second development process, thereby forming a pre-pattern for self-assembly; optionally heating the pre-pattern; casting a solution of a material capable of self-assembly dissolved in a second solvent on the pre-pattern and removing the second solvent; and allowing the casted material to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material.

    Abstract translation: 形成包括自组装材料的层状结构的方法包括:在基底上设置非交联光致抗蚀剂层; 将光致抗蚀剂层图案化地暴露于第一辐射; 可选地加热曝光的光致抗蚀剂层; 在第一显影工艺中用含水碱性显影剂显影曝光的光致抗蚀剂层,形成初始图案化的光致抗蚀剂层; 以光学,光学和/或化学方式处理初始图案化的光致抗蚀剂层,从而形成经处理的图案化的光刻胶层,其包含设置在第一衬底表面上的非交联处理的光致抗蚀剂; 在经处理​​的图案化光刻胶层上浇铸取向控制材料在第一溶剂中的溶液,并除去第一溶剂,形成取向控制层; 加热所述取向控制层以有效地将所述取向控制材料的一部分粘合到第二基板表面; 在第二显影过程中除去至少一部分经处理的光致抗蚀剂和任选的任何未结合的取向控制材料,从而形成用于自组装的预图案; 可选地加热预图案; 将能够自组装的溶解在第二溶剂中的材料的溶液浇铸在预图案上并除去第二溶剂; 并且允许铸造材料通过任选的加热和/或退火自组装,从而形成包括自组装材料的层状结构。

    Sulfonamid-enthaltende Fotoresist-Zusammensetzungen und Verfahren zur Verwendung

    公开(公告)号:DE112011100590B4

    公开(公告)日:2021-10-28

    申请号:DE112011100590

    申请日:2011-02-03

    Abstract: Positiv-Fotoresist-Zusammensetzung, umfassend ein Polymer, einen Fotosäuregenerator (PAG) und ein Lösungsmittel, wobei der PAG Sulfonate, Oniumsalze, aromatische Diazoniumsalze, Sulfoniumsalze, Diaryliodoniumsalze und Sulfonsäureester von N-Hydroxyamiden oder N-Hydroxyimiden umfasst, wobei das Polymer eine erste Wiederholungseinheit, die eine Sulfonamidgruppe und eine verzweigte Verknüpfungsgruppe aufweist, gemäß Formel (XII) umfasst,und eine zweite Wiederholungseinheit, die eine mit einer säurelabilen Schutzgruppe geschützte saure Gruppe enthält, umfasst, wobei:R28unabhängig ausgewählt ist aus der Gruppe bestehend aus Wasserstoff, Fluor, Methyl und Trifluormethyl; undR29fluoriertes C1-C12-Alkyl ist.

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