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    Photoactive polymer brush materials and EUV patterning using the same
    2.
    发明专利
    Photoactive polymer brush materials and EUV patterning using the same 未知

    公开(公告)号：GB2585586A

    公开(公告)日：2021-01-13

    申请号：GB202014174

    申请日：2019-02-14

    Applicant: IBM

    Inventor： EKMINI ANUJA DE SILVA ,  RUDY J WOJTECKI ,  DARIO GOLDFARB ,  DANIEL PAUL SANDERS ,  NELSON FELIX

    IPC: C08F4/00 ,  C08G83/00 ,  G03F7/30

    Abstract: Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.

    Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
    5.
    发明专利
    Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers 未知

    公开(公告)号：GB2547121A

    公开(公告)日：2017-08-09

    申请号：GB201704200

    申请日：2016-02-08

    Applicant: IBM

    Inventor： JOY CHENG ,  MELIA TJIO ,  GURPREET SINGH ,  ALEXANDER FRIZ ,  HSINYU TSAI ,  MARKUS BRINK ,  MICHAEL GUILLORN ,  CHI-CHUN LIU ,  GREGORY DOERK ,  DANIEL PAUL SANDERS

    IPC: C08J7/04 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06 ,  H05K3/00

    Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self- assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern. The lamellar domain patterns are useful in forming transfer patterns comprising two-dimensional customized features.

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