公开(公告)号：EP1390991A4

公开(公告)日：2007-10-31

申请号：EP02731116

申请日：2002-03-08

Applicant: IBM

Inventor： SOLOMON PAUL MICHAEL ,  SHAW JANE MARGARET ,  KAGAN CHERIE R ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  NING TAK HUNG

IPC: D02G3/44 ,  H01L29/06 ,  H01L29/786 ,  H01L41/08 ,  H01L41/113 ,  H01L51/00 ,  H01L51/05 ,  H01L35/24 ,  B32B27/12 ,  H05B33/02

CPC classification number: D02G3/441 ,  H01L29/0657 ,  H01L51/0036 ,  H01L51/0512 ,  H02N2/18

Abstract: Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiply thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive to electrical, light, mechanical, heat, or chemical energy. Single thread active devices include FETs, electro optical devices, stress transducers, and the like. The active devices include a semiconductor body that for the single thread device is a layer about the core of the thread. For the multiple thread devices, the semiconductor body is either a layer on one or more thread or an elongated body disposed between two of the threads. For example, a FET (50) is formed of three threads, of which carried a gate insulator layer (74) and a semiconductor layer (72) and the other two (58,60) of which are electrically conductive and serve as the source (58) and drain (60). The substrates or threads are preferably flexible and can be formed in a fabric.

公开(公告)号：JP2002198539A

公开(公告)日：2002-07-12

申请号：JP2001332113

申请日：2001-10-30

Applicant: IBM

Inventor： DIMITRAKOPOULOS CHRISTOS DIMIT ,  KAGAN CHERIE RENEE ,  MITZI DAVID BRIAN

IPC: H01L21/28 ,  G02F1/1368 ,  H01L21/316 ,  H01L21/336 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30 ,  H01L51/00

Abstract: PROBLEM TO BE SOLVED: To provide a thin-film transistor(TFT) device structure that shows high field effect mobility and high current modulation at a lower operating voltage than an organic/inorganic hybrid TFT device with the newest technique, and is based on an organic/inorganic hybrid semiconductor material. SOLUTION: This structure includes a set of conductive gate electrodes covered with a high-permittivity insulator, the layer of the organic/inorganic hybrid semiconductor, a set of electric conductive source electrode corresponding to each gate line and electric conductive drain electrode, and a passivation layer that is optionally selected and covers the device structure for protection. By high-permittivity gate insulator, gate voltage dependency in the organic/ inorganic hybrid semiconductor is utilized, thus achieving the field-effect mobility at a high level in the extremely low operation voltage.

公开(公告)号：WO9821755A3

公开(公告)日：1998-10-08

申请号：PCT/US9720862

申请日：1997-11-10

Applicant: IBM ,  ANGELOPOULOS MARIE ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  FURMAN BRUCE KENNETH ,  GRAHAM TERESITA ORDONEZ ,  LIEN SHUI CHIH ALAN

Inventor： ANGELOPOULOS MARIE ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  FURMAN BRUCE KENNETH ,  GRAHAM TERESITA ORDONEZ ,  LIEN SHUI-CHIH ALAN

IPC: H01L21/3205 ,  G02F1/1343 ,  G02F1/1345 ,  H01L21/28 ,  H01L21/288 ,  H01L21/58 ,  H01L23/52 ,  H01L27/148 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/14 ,  H05B33/26 ,  H01L29/47

CPC classification number: H01L51/0504 ,  G02F1/13439 ,  H01L29/458 ,  H01L29/4908 ,  H01L51/5203

Abstract: Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask; patterning using a patterned metal layer; patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.

Abstract translation: 描述了具有提供电连接的图案化导电聚合物的电子器件及其制造方法。 描述了液晶显示单元，其中至少一个电极提供跨越由图案化的导电聚合物形成的液晶材料的偏压。 描述了具有图案化导电聚合物作为源极漏极和栅电极的薄膜晶体管。 描述了由图案化的导电聚合物形成的具有阳极和涂覆区域的发光二极管。 使用抗蚀剂掩模的图案化方法; 使用图案化金属层进行图案化; 使用抗蚀剂图案化金属层; 并且直接对导电聚合物进行图案化以形成电极，并描述阳极和阴极区域。

公开(公告)号：GB2366874A

公开(公告)日：2002-03-20

申请号：GB0110320

申请日：2001-04-27

Applicant: IBM

Inventor： BUCHWALTER STEPHEN ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  LEE KANG-WOOK ,  LIEN SHUI-CHIH ALAN ,  PURUSHOTHAMAN SAMPATH

IPC: G02F1/1337 ,  G02F1/1343

Abstract: In the invention, the technology of the formation of self assembled monolayers is employed in imparting vertical alignment and domain favoring features in homeotropic pixel elements in the technology of liquid crystal type displays. Substituted silane compounds, such as octadecylsilane when applied on a transparent conductive layer surface such as that of indium tin oxide in a hydrolyzable alcohol solution, and then followed by a baking temperature cycle, form essentially single thickness molecule layers (monolayers) of molecules that are bonded at one end to the indium tin oxide surface and have the other end of the molecule operable to influence molecular orientation and domain preference of a liquid crystal.

公开(公告)号：SG121693A1

公开(公告)日：2006-05-26

申请号：SG200104767

申请日：1997-11-10

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  FURMAN BRUCE KENNETH ,  GRAHAM TERESITA O

IPC: H01L21/3205 ,  G02F1/1343 ,  G02F1/1345 ,  H01L21/28 ,  H01L21/288 ,  H01L21/58 ,  H01L23/52 ,  H01L27/148 ,  H01L29/43 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L31/00 ,  H01L31/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L51/05 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/14 ,  H05B33/26

公开(公告)号：GB2366874B

公开(公告)日：2004-04-28

申请号：GB0110320

申请日：2001-04-27

Applicant: IBM

Inventor： BUCHWALTER STEPHEN ,  DIMITRAKOPOULOS CHRISTOS DIMIT ,  LEE KANG-WOOK ,  LIEN SHUI-CHIH ALAN ,  PURUSHOTHAMAN SAMPATH

IPC: G02F1/1337 ,  G02F1/1343

Abstract: In the invention, the technology of the formation of self assembled monolayers is employed in imparting vertical alignment and domain favoring features in homeotropic pixel elements in the technology of liquid crystal type displays. Substituted silane compounds, such as octadecylsilane when applied on a transparent conductive layer surface such as that of indium tin oxide in a hydrolyzable alcohol solution, and then followed by a baking temperature cycle, form essentially single thickness molecule layers (monolayers) of molecules that are bonded at one end to the indium tin oxide surface and have the other end of the molecule operable to influence molecular orientation and domain preference of a liquid crystal.