公开(公告)号：WO2011029706A3

公开(公告)日：2011-09-15

申请号：PCT/EP2010062081

申请日：2010-08-19

Applicant: IBM ,  IBM UK ,  VAIDYANATHAN RAMAN ,  DELIGIANNI HARIKLIA ,  HOVEL HAROLD JOHN

Inventor： VAIDYANATHAN RAMAN ,  DELIGIANNI HARIKLIA ,  HOVEL HAROLD JOHN

IPC: H01L31/18 ,  H01L31/032 ,  H01L31/0336

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  Y02E10/541

Abstract: A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer..

Abstract translation: 在退火过程中减少光伏薄膜结构元件损耗的方法包括在基底上沉积薄膜，其中薄膜包括单一化学元素或化学化合物，用保护层涂覆薄膜 以形成涂覆的薄膜结构，其中所述保护层在退火过程期间防止单个化学元素或部分化合物的一部分逸出，并且对涂覆的薄膜结构进行退火以形成涂覆的光伏薄膜结构，其中 涂覆的光伏薄膜保留单一化学元素的一部分或化学化合物的部分在退火过程中通过保护层防止逸出。

公开(公告)号：DE102012213687B4

公开(公告)日：2017-05-11

申请号：DE102012213687

申请日：2012-08-02

Applicant: IBM

Inventor： HOVEL HAROLD JOHN

IPC: H01L31/18

Abstract: Verfahren zur Herstellung einer Solarzelle, aufweisend: Abscheiden einer ersten Fotomaske mit einem Muster, das erste Hohlräume umfasst, auf einer ersten Oberfläche enes Siliciumsustrats (850, 950, 1050); Abscheiden einer ersten dotierten amorphen Siliciumschicht auf einer ersten Oberfläche eines Siliciumsubstrats (852, 952, 1052); Aufbringen einer zweiten Fotomaske mit einem Muster, das zweite Hohlräume umfasst, auf einer ersten Oberfläche enes Siliciumsubstrats (856, 956, 1056); Abscheiden einer zweiten dotierten amorphen Siliciumschicht auf der ersten Oberfläche des Siliciumsubstrats in den Hohlräumen (858, 958, 1058), wobei die zweite dotierte amorphe Siliciumschicht entgegengesetzt zur ersten dotierten amorphen Siliciumschicht dotiert ist; und Durchführen eines Ausheilens, um die erste dotierte amorphe Siliciumschicht und die zweite dotierte amorphe Siliciumschicht in kristalline Siliciumschichten umzuwandeln.

公开(公告)号：DE69304503D1

公开(公告)日：1996-10-10

申请号：DE69304503

申请日：1993-12-13

Applicant: IBM

Inventor： BAILEY FREDERIC DENIS ,  BUCHANAN DOUGLAS ANDREW ,  CALLEGARI ALESSANDRO CESARE ,  CLEARFIELD HOWARD MARC ,  DOANY FUAD ELIAS ,  FLAGELLO DONIS GEORGE ,  HOVEL HAROLD JOHN ,  LATULIPE DOUGLAS CHARLES ,  LUSTIG NAFTALI ELIAHU ,  POMERENE ANDREW THOMAS STEWART ,  PURUSHOTHAMAN SAMPATH ,  SCHERPEREEL CHRISTOPHER MICHAE ,  SEEGER DAVID EARLE ,  SHAW JANE MARGARET

IPC: G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314

Abstract: The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

公开(公告)号：IT1164529B

公开(公告)日：1987-04-15

申请号：IT2774679

申请日：1979-11-30

Applicant: IBM

Inventor： HODGSON RODNEY TREVOR ,  HOVEL HAROLD JOHN ,  MAC PHERSON WOODALL JERRY

IPC: H01L31/04 ,  H01L31/055

公开(公告)号：DE3063109D1

公开(公告)日：1983-06-16

申请号：DE3063109

申请日：1980-07-01

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  WOODALL JERRY MCPHERSON

IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/02

Abstract: Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating.

公开(公告)号：DE2406691A1

公开(公告)日：1974-09-19

申请号：DE2406691

申请日：1974-02-13

Applicant: IBM

Inventor： HOVEL HAROLD JOHN

IPC: G11C11/41 ,  G11C13/00 ,  H01L29/86 ,  H01L45/00 ,  H01L

公开(公告)号：DE2407897A1

公开(公告)日：1974-09-12

申请号：DE2407897

申请日：1974-02-19

Applicant: IBM

Inventor： BRASLAU NORMAN ,  CUOMO JEROME JOHN ,  HARRIS ERIK PRESTON ,  HOVEL HAROLD JOHN

IPC: H01L33/00 ,  H05B33/12 ,  H05B33/02

Abstract: A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.

公开(公告)号：DE3687354T2

公开(公告)日：1993-07-15

申请号：DE3687354

申请日：1986-02-25

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  MCKOY THERMON EZZARD

IPC: C30B31/06 ,  C30B29/40 ,  C30B31/02 ,  H01L21/223 ,  H01L21/225

Abstract: A dopant is diffused into a Group III-V semiconductor body, by:… a) placing a deposition substrate possessing a dopant-containing layer in a heating chamber so that the dopantcontaining layer faces an object substrate made from a III-V simiconductor material;… b) introducing into the hearting chamber a source of the same Group V element as that in the object substrate, the source being capable of providing the Group V element in the vapour phase at the diffusion temperature with the vapour pressure of the vapour phase Group V element being at or above the equilibrium vapour pressure of the Group V element present at the surface of the object substrate; and,… c) heating the deposition substrate and the object subatrate to the diffusion temperature for a period of time sufficient to diffuse a desired amount of dopant into the object substrate to a desired depth therein.

公开(公告)号：DE3571721D1

公开(公告)日：1989-08-24

申请号：DE3571721

申请日：1985-07-23

Applicant: IBM

Inventor： HOVEL HAROLD JOHN ,  KUECH THOMAS FRANCIS

IPC: H01L21/28 ,  G02B6/13 ,  H01L21/033 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/338 ,  H01L29/812 ,  H01S5/00 ,  H01S5/02 ,  H01L21/31

Abstract: A portion of a first layer (14; 34) exposed through an opening (20; 40) in a second layer (18; 38) is chemically converted to a compound having properties different to those of the first layer. By arranging that the conversion to the compound extends beyond the boundary of the opening and removing the compound, further material (24) can be depositied onto the substrate (12) through the opening (20). In this manner, a self-aligned semiconductor device can be formed with the further material (24) serving as the gate of the device. If the conversion to the compound is limited to the portion of the first layer directly below the opening (40) and the compound has an index of refraction different from that of the first layer, the converted portion (36) can serve as an optical waveguide.

公开(公告)号：DE2966468D1

公开(公告)日：1984-01-12

申请号：DE2966468

申请日：1979-10-19

Applicant: IBM

Inventor： HOVEL HAROLD JOHN

IPC: H01L31/04 ,  H01L31/068 ,  H01L31/06 ,  H01L31/18