公开(公告)号：DE3066410D1

公开(公告)日：1984-03-08

申请号：DE3066410

申请日：1980-09-15

Applicant: IBM

Inventor： AVIRAM ARI ,  HOFER DONALD CLIFFORD ,  KAUFMAN FRANK BENJAMIN ,  KRAMER STEVEN ROBERT ,  HATZAKIS MICHAEL ,  JONES FLETCHER ,  SHAW JANE MARGARET

IPC: G03F7/038 ,  G03C1/72 ,  G03C5/16

公开(公告)号：DE69022841T2

公开(公告)日：1996-05-30

申请号：DE69022841

申请日：1990-12-07

Applicant: IBM

Inventor： JAHNES CHRISTOPHER VINCENT ,  JONES FLETCHER ,  LOGAN JOSEPH SKINNER ,  RUSSAK MICHAEL ALLEN

IPC: G11B11/10 ,  G11B11/105 ,  G11B11/12 ,  G11B11/18

Abstract: A dielectric layer (14, 18) for use in a magneto-optic storage medium contains a compound glass of SiO2 - MO2, SiO2 - M2O3 or SiO2 - M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

公开(公告)号：AT128783T

公开(公告)日：1995-10-15

申请号：AT90123487

申请日：1990-12-07

Applicant: IBM

Inventor： JAHNES CHRISTOPHER VINCENT ,  JONES FLETCHER ,  LOGAN JOSEPH SKINNER ,  RUSSAK MICHAEL ALLEN

IPC: G11B11/10 ,  G11B11/105 ,  G11B11/12 ,  G11B11/18

Abstract: A dielectric layer (14, 18) for use in a magneto-optic storage medium contains a compound glass of SiO2 - MO2, SiO2 - M2O3 or SiO2 - M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

公开(公告)号：AU539639B2

公开(公告)日：1984-10-11

申请号：AU6298180

申请日：1980-10-06

Applicant: IBM

Inventor： AVIRAM ARI ,  HATZAKIS MICHAEL ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  HOFER DONALD C ,  JONES FLETCHER

IPC: G03D7/00 ,  G03C1/727

公开(公告)号：DE69022841D1

公开(公告)日：1995-11-09

申请号：DE69022841

申请日：1990-12-07

Applicant: IBM

Inventor： JAHNES CHRISTOPHER VINCENT ,  JONES FLETCHER ,  LOGAN JOSEPH SKINNER ,  RUSSAK MICHAEL ALLEN

IPC: G11B11/10 ,  G11B11/105 ,  G11B11/12 ,  G11B11/18

Abstract: A dielectric layer (14, 18) for use in a magneto-optic storage medium contains a compound glass of SiO2 - MO2, SiO2 - M2O3 or SiO2 - M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

公开(公告)号：CA1163671A

公开(公告)日：1984-03-13

申请号：CA358901

申请日：1980-08-25

Applicant: IBM

Inventor： AVIRAM ARI ,  HATZAKIS MICHAEL ,  JONES FLETCHER ,  KAUFMAN FRANK B ,  KRAMER STEVEN R ,  HOFER DONALD C

IPC: G03D7/00

Abstract: A new class of E-beam resists is described. The resists are donor polymer-doped halocarbon acceptor transfer complexes. They are prepared from known polymeric backbones such as polyvinylchloride, polyglutamic acid, polyvinylbenzylchloxide, polyepichlorohydrin, poly(ahalophosphazenes), polyacrylic chloride, polystyrene and the like; and donor molecules such as tetrathiafulvalenes, tetraselenafulvalenes, dithiadiselenafulvalene, ferrocenes, phenothiazines, pyrazoline and an amine having the general formula R-NH2 where R can be selected from alkyl and aryl groups. A lithographic method is also described.

公开(公告)号：CA2032866C

公开(公告)日：1994-09-06

申请号：CA2032866

申请日：1990-12-20

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  JONES FLETCHER ,  LOGAN JOSEPH S ,  RUSSAK MICHAEL A

IPC: G11B11/10 ,  G11B11/105 ,  G11B7/24 ,  C03C3/085 ,  H01G4/10 ,  H01G4/12 ,  G11B11/14

Abstract: A dielectric layer for use in a magneto-optic storage medium contains a compound glass of SiO2 -MO2, SiO2 - M2 O3, or SiO2 - M2 O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

公开(公告)号：DE3776047D1

公开(公告)日：1992-02-27

申请号：DE3776047

申请日：1987-07-28

Applicant: IBM

Inventor： JONES FLETCHER ,  LOGAN JOSEPH SKINNER

IPC: H01L21/302 ,  C23C14/34 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  C23C14/14 ,  C23F1/08

公开(公告)号：CA2032866A1

公开(公告)日：1991-08-01

申请号：CA2032866

申请日：1990-12-20

Applicant: IBM

Inventor： JAHNES CHRISTOPHER V ,  JONES FLETCHER ,  LOGAN JOSEPH S ,  RUSSAK MICHAEL A

IPC: G11B11/10 ,  G11B11/105 ,  G11B11/14 ,  C03C3/085 ,  H01G4/10 ,  H01G4/12

Abstract: A dielectric layer (14, 18) for use in a magneto-optic storage medium contains a compound glass of SiO2 - MO2, SiO2 - M2O3 or SiO2 - M2O5 and combinations thereof where M is selected from Zr, Ti, Al, Nb, Y, Sn, In, Ta and Sb.

公开(公告)号：DE3379604D1

公开(公告)日：1989-05-18

申请号：DE3379604

申请日：1983-09-20

Applicant: IBM

Inventor： JONES FLETCHER

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/317

Abstract: Proximity effect is reduced or eliminated by breaking each shape of a lithographic exposure pattern into two parts, a perimeter part having a width on the order of the lithographic exposure pattern minimum linewidth and the remaining central part or parts (if any) which are completely surrounded by the perimeter part. Figure 2 shows the edge parts hatched and the centre part blank. The lithographic exposure pattern is then modified by moving or setting back the edges of each central part away from the perimeter part which surrounds it (similar to reducing the size of the central part) to form a nominally unexposed band separating each central part from the perimeter part which surrounds it. This is shown in Fig. 3.The width of the nominally unexposed band in the modified exposure pattern is preferably chosen as large as possible so long as the condition is met that upon developing a radiation sensitive layer directly exposed to the modified exposure pattern, the nominally unexposed band develops (i.e., dissolves, resists dissolution, or is otherwise modified) substantially as if it were also exposed. The nominally unexposed band is exposed, in fact, by electrons scattered from the directly exposed part(s) of the shape (the perimeter part plus the central part, if any). The width of the nominally unexposed band is preferably about twice the edge bias applied to outside edges of each shape.