公开(公告)号：GB2600899B

公开(公告)日：2022-11-02

申请号：GB202202503

申请日：2020-07-31

Applicant: IBM

Inventor： POUYA HASHEMI ,  BRUCE DORIS ,  EUGENE O'SULLIVAN ,  MICHAEL F LOFARO

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A memory structure is provided that avoids high resistance due to the galvanic effect. The high resistance is reduced and/or eliminated by providing a T-shaped bottom electrode structure of uniform construction (i.e., a single piece). The T-shaped bottom electrode structure includes a narrow base portion and a wider shelf portion. The shelf portion of the T-shaped bottom electrode structure has a planar topmost surface in which a MTJ pillar forms an interface with.

公开(公告)号：GB2600899A

公开(公告)日：2022-05-11

申请号：GB202202503

申请日：2020-07-31

Applicant: IBM

Inventor： POUYA HASHEMI ,  BRUCE DORIS ,  EUGENE O'SULLIVAN ,  MICHAEL F LOFARO

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: A memory structure is provided that avoids high resistance due to the galvanic effect. The high resistance is reduced and/or eliminated by providing a T-shaped bottom electrode structure of uniform construction (i.e., a single piece). The T-shaped bottom electrode structure includes a narrow base portion and a wider shelf portion. The shelf portion of the T-shaped bottom electrode structure has a planar topmost surface in which a MTJ pillar forms an interface with.

公开(公告)号：SG97196A1

公开(公告)日：2003-07-18

申请号：SG200106064

申请日：2001-09-28

Applicant: IBM

Inventor： DONALD F CANAPERI ,  JACK OON CHU ,  GUY COHEN ,  LIJUAN HUANG ,  JOHN ALBRECHT OTT ,  MICHAEL F LOFARO

IPC: H01L21/304 ,  B24B37/34 ,  B24B49/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/762 ,  H01L21/84

Abstract: A method and apparatus is described incorporating a semiconductor substrate, a CMP tool, a brush cleaning tool, and a chemical wafer cleaning tool. The CMP is performed with a down force of 1 psi, a backside air pressure of 0.5 psi, a platen speed of 50 rpm, a crarrier speed of 30 rpm and a slurry flow rate of 140 milliliters per minute.

公开(公告)号：SG87156A1

公开(公告)日：2002-03-19

申请号：SG200004528

申请日：2000-08-16

Applicant: IBM

Inventor： KARL E BOGGS ,  KENNETH M DAVIS ,  WILLIAM F LANDERS ,  MICHAEL F LOFARO ,  ADAM D TICKNOR ,  RONALD D FIEGE

IPC: B24B37/30 ,  B24B37/32 ,  B24B49/12 ,  B24B49/16 ,  H01L21/302 ,  H01L21/304

Abstract: A chemical-mechanical polishing (CMP) control system controls distribution of pressure across the backside of a semiconductor wafer being polished. The system includes a CMP apparatus having a carrier for supporting a semiconductor wafer. The carrier includes a plurality of dual function piezoelectric actuators. The actuators sense pressure variations across the semiconductor wafer and are individually controllable. A control is connected to the actuators for monitoring sensed pressure variations and controlling the actuators to provide a controlled pressure distribution across the semiconductor wafer.