公开(公告)号：JP2002014472A

公开(公告)日：2002-01-18

申请号：JP2001130763

申请日：2001-04-27

Applicant: IBM

Inventor： WALLOW THOMAS I ,  ROBERT D ALLEN ,  PHILIP JOE BROCK ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  TRUONG HOA DAO ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition capable of ensuring suitability to high resolution lithography using imaging radiation of 193 nm and to provide a lithographic process using the photoresist composition. SOLUTION: An acid catalyzed positive photoresist composition is provided by using a resist composition containing a cycloolefin polymer with a cydoolefin monomer having a lactone moiety. The photoresist can be imaged with radiation of 193 nm and is developed to form a photoresist structure with improved development characteristics and improved etching resistance. The monomer has no oxygen atom between the lactone moiety and a cycloolefin ring. The lactone moiety is appropriately spirolactone (5- or 6-membered ring) which bonds directly to the cycloolefin ring.

公开(公告)号：DE10118902A1

公开(公告)日：2002-03-14

申请号：DE10118902

申请日：2001-04-18

Applicant: IBM

Inventor： WALLOW THOMAS I ,  ALLEN ROBERT D ,  BROCK PHILLIP JOE ,  DI PIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  TRUONG HOA DAO ,  VARANASI PUSHKARA RAO

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/40 ,  H01L21/027 ,  G03F7/038

Abstract: Acid-catalyzed positive photoresist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form photoresist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing cyclic olefin polymer having a cyclic olefin monomer having a lactone moiety, the monomer having no oxygen atoms intervening between the lactone moiety and a ring of the cyclic olefin. Preferred lactone moieties are spirolactones (having a 5 or 6 membered ring) directly to a cyclic olefin ring.