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    Isothermal solution mixing growth of solids
    1.
    发明授权
    Isothermal solution mixing growth of solids 失效
    等温溶液混合生长固体

    公开(公告)号：US3881037A

    公开(公告)日：1975-04-29

    申请号：US36051873

    申请日：1973-05-15

    Applicant: IBM

    Inventor： GRANDIA JOHANNES ,  POTEMSKI ROBERT MARTIN ,  WOODALL JERRY MCPHERSON

    IPC: C30B19/00 ,  C30B19/06 ,  H01L21/208 ,  H01L7/00 ,  H01L7/40

    CPC classification number: C30B19/00 ,  C30B19/06 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/065

    Abstract: It has been discovered for the practice of this invention that when two melts at the same temperature which were separately and simultaneously saturated are mixed, the combined melt is supersaturated and crystal growth occurs isothermally. Mixing of different melts is caused to occur so as to control both composition and amount of growth of the resultant solid substance. A new technique for heterojunction growth has been discovered for the practice of this invention. The method has the capability for growing multi-layered structures over a wide range of thicknesses and especially for layer thicknesses substantially less than 1 micron. Generally, the practice of this invention provides solutions to several problems associated with the liquid phase epitaxy method. Specifically, it provides for the maintenance of GaAs surface in suitable form for high quality growth of a layer thereon and for the facility of controllably changing the layer composition in the case of semiconductor materials with more than two components. Important features of the invention are: a partitioned crucible of isolating two or more melts; a window in each melt compartment which exposes the melt to the substrate when correctly aligned; and a substrate holder which can be positioned to allow contact with one melt and then repositioned to allow contact with one or more other melts without the loss of a solid-liquid interface. In the preferred embodiment of the invention, the windows are opened on the walls of an inner crucible; the substrate is held in two slots on a ground face of a cylindrical rod which can be rotated from one window to the next.

    Abstract translation: 对于本发明的实践已经发现，当在相同温度下分开并同时饱和的两种熔体混合时，组合的熔体是过饱和的，并且等温发生晶体生长。 引起不同熔体的混合，以便控制所得固体物质的组成和生长量。 已经发现用于异质结生长的新技术用于本发明的实践。 该方法具有在宽范围的厚度上增长多层结构的能力，特别是对于基本上小于1微米的层厚度。

    SOLAR CELL AND PROCESS FOR PRODUCING IT
    3.
    发明专利
    SOLAR CELL AND PROCESS FOR PRODUCING IT 未知

    公开(公告)号：DE3063109D1

    公开(公告)日：1983-06-16

    申请号：DE3063109

    申请日：1980-07-01

    Applicant: IBM

    Inventor： HOVEL HAROLD JOHN ,  WOODALL JERRY MCPHERSON

    IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/02

    Abstract: Surface recombination in solar cells that is produced by band bending at the surface of the semiconductor which is in turn caused by defect states which pin the Fermi level at the surface, may be improved by applying a surface layer which may be a plasma oxide that has been hydrogen annealed and this layer may also be useful as an antireflecting coating.

    SEMICONDUCTOR SIGNAL CONVERSION DEVICE USING PHOTON COUPLING
    5.
    发明专利
    SEMICONDUCTOR SIGNAL CONVERSION DEVICE USING PHOTON COUPLING 未知

    公开(公告)号：DE3279432D1

    公开(公告)日：1989-03-09

    申请号：DE3279432

    申请日：1982-11-23

    Applicant: IBM

    Inventor： CHAPPELL TERRY IVAN ,  POHL DIETER W ,  WOODALL JERRY MCPHERSON

    IPC: H01L31/12 ,  H01L31/173 ,  H01L31/16

    Abstract: In a first region (2) of a monolithic direct bandgap semiconductor device, an electrical input signal is converted to photons which serve as carriers of the signal through a semi-insulating substrate (8). The photons are reconverted to an electrical output signal in a second region (10) of the device. At least one (10) of the signal conversion regions has a multi-PN-junction structure with the PN junctions disposed obliquely to the photon path through the device. Alternatively, the second region may perform the electrical signal-to-photon signal conversion and the first region the photon signal-to-electrical signal conversion. … Applications of the device are for the conversion of AC to DC signals, AC to AC signals and DC to DC signals. The device can also serve as an electron accelerator capable of providing a field of 2000 volts per centimeter.

    A PROCESS FOR GENERATING ENERGY IN THE FORM OF HEAT AND HYDROGEN
    10.
    发明专利
    A PROCESS FOR GENERATING ENERGY IN THE FORM OF HEAT AND HYDROGEN 未知

    公开(公告)号：DE3176588D1

    公开(公告)日：1988-02-11

    申请号：DE3176588

    申请日：1981-09-23

    Applicant: IBM

    Inventor： CUOMO JEROME JOHN ,  WOODALL JERRY MCPHERSON

    IPC: F24V30/00 ,  C01B3/06 ,  C01B3/08

    Abstract: The invention relates to a process for generating heat and hydrogen by reacting a passivating oxide forming solid state material and water under the control of a passivating oxide preventing agent forming thereby an oxide reaction product, heat and hydrogen. The oxide reaction product is then electrolytically or thermo chemically reduced to recover the solid state material. Aluminium is hydrolized in the presence of gallium producing aluminium oxide, heat and hydrogen. The aluminium oxide is in turn electrolyzed back to aluminum.

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