公开(公告)号：AT539447T

公开(公告)日：2012-01-15

申请号：AT02784578

申请日：2002-11-22

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： CHEN TZE-CHIANG ,  ENGEL BRETT ,  FITZSIMMONS JOHN ,  KANE TERENCE ,  LUSTIG NAFTALI ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY ,  WANG YUN ,  KALTALIOGLU ERDEM

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

公开(公告)号：JP2011061228A

公开(公告)日：2011-03-24

申请号：JP2010247790

申请日：2010-11-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FITZSIMMONS JOHN ,  GRECO STEPHEN ,  LEE JIA ,  GATES STEPHEN ,  SPOONER TERRY ,  ANGYAL MATTHEW ,  HICHRI HABIB ,  STANDAERT THEORDORUS ,  BIERY GLENN

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76832 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an advanced back-end-of-line (BEOL) interconnect structure provided with a hybrid dielectric body. SOLUTION: Inter layer dielectric body (ILD) for a via level is preferably different from an ILD for a line level. In a preferable embodiment, the ILD the via level is formed with a low-k SiCOH material, and the ILD for the line level is formed with a low-k polymer thermosetting material. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有混合电介质体的高级后端（BEOL）互连结构。 解决方案：用于通孔电平的层间电介质体（ILD）优选地不同于线路电平的ILD。 在优选的实施方案中，ILD通过低k SiCOH材料形成通孔层，并且用低k聚合物热固性材料形成线水平的ILD。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：AU2003279460A1

公开(公告)日：2004-06-03

申请号：AU2003279460

申请日：2003-11-07

Applicant: IBM

Inventor： HICHRI HABIB ,  STANDAERT THEORDORUS ,  BIERY GLENN ,  FITZSIMMONS JOHN ,  GRECO STEPHEN ,  LEE JIA ,  GATES STEPHEN ,  SPOONER TERRY ,  ANGYAL MATTHEW

IPC: H01L21/768 ,  H01L23/532

Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.

公开(公告)号：DE69029586D1

公开(公告)日：1997-02-13

申请号：DE69029586

申请日：1990-10-15

Applicant: IBM

Inventor： DEAN ALICIA ,  FITZSIMMONS JOHN ,  HAVAS JANOS ,  MCCORMICK BARRY ,  SHAH PROBODH

IPC: G03F7/42 ,  H01L21/027 ,  H01L21/30

公开(公告)号：DE69029586T2

公开(公告)日：1997-07-17

申请号：DE69029586

申请日：1990-10-15

Applicant: IBM

Inventor： DEAN ALICIA ,  FITZSIMMONS JOHN ,  HAVAS JANOS ,  MCCORMICK BARRY ,  SHAH PROBODH

IPC: G03F7/42 ,  H01L21/027 ,  H01L21/30