公开(公告)号：MY144403A

公开(公告)日：2011-09-15

申请号：MYPI20083826

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/306

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.

公开(公告)号：MY159475A

公开(公告)日：2017-01-13

申请号：MYPI20052852

申请日：2005-06-22

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  FRED C REDEKER

IPC: C25D17/00 ,  C25D17/14

Abstract: AN ELECTROPLATING HEAD (100) INCLUDING A CHAMBER (105) HAVING A FLUID ENTRANCE (111) AND A FLUID EXIT (112) IS PROVIDED. THE CHAMBER IS CONFIGURED TO CONTAIN A FLOW OF ELECTROPLATING SOLUTION FROM THE FLUID ENTRANCE TO THE FLUID EXIT. THE ELECTROPLATING HEAD ALSO INCLUDES AN ANODE (115A,115B) DISPOSED WITHIN THE CHAMBER (105A,105B). THE ANODE IS CONFIGURED TO BE ELECTRICALLY CONNECTED TO A POWER SUPPLY (117). THE ELECTROPLATING HEAD FURTHER INCLUDES A POROUS RESISTIVE MATERIAL (119) DISPOSED AT THE FLUID EXIT SUCH THAT THE FLOW OF ELECTROPLATING SOLUTION IS REQUIRED TO TRAVERSE THROUGH THE POROUS RESISTIVE MATERIAL.

公开(公告)号：MY147290A

公开(公告)日：2012-11-30

申请号：MYPI20111318

申请日：2007-03-27

Applicant: LAM RES CORP

Inventor： BOYD JOHN M ,  REDEKER FRITZ C ,  YEZDI DORDI ,  MICHAEL RAVKIN ,  JOHN DE LARIOS

IPC: H01L21/302

Abstract: A PROXIMITY HEAD AND ASSOCIATED METHOD OF USE IS PROVIDED FOR PERFORMING CONFINED AREA PLANARIZATION OF A SEMICONDUCTOR WAFER (223). THE PROXIMITY HEAD INCLUDES A CHAMBER (215) DEFINED TO MAINTAIN AN ELECTROLYTE SOLUTION (211). A CATHODE (213) IS DISPOSED WITHIN THE CHAMBER IN EXPOSURE TO THE ELECTROLYTE SOLUTION. A CATION EXCHANGE MEMBRANE (221) IS DISPOSED OVER A LOWER OPENING OF THE CHAMBER. A TOP SURFACE OF THE CATION EXCHANGE MEMBRANE IS IN DIRECT EXPOSURE TO THE ELECTROLYTE SOLUTION TO BE MAINTAINED WITHIN THE CHAMBER. A FLUID SUPPLY CHANNEL (227) IS DEFINED TO EXPEL FLUID AT A LOCATION ADJACENT TO A LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE. A VACUUM CHANNEL (225) IS DEFINED TO PROVIDE SUCTION AT A LOCATION ADJACENT TO THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE, SUCH THAT THE FLUID TO BE EXPELLED FROM THE FLUID SUPPLY CHANNEL IS MADE TO FLOW OVER THE LOWER SURFACE OF THE CATION EXCHANGE MEMBRANE.

公开(公告)号：SG118432A1

公开(公告)日：2006-01-27

申请号：SG200504758

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  REDEKER FRED C

IPC: C25D17/00 ,  C25D17/14

Abstract: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.

公开(公告)号：SG118429A1

公开(公告)日：2006-01-27

申请号：SG200504752

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  REDEKER FRED C ,  CARL WOODS

IPC: C25D7/12 ,  H01L21/288

Abstract: First and second electrodes (107A,107B) are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer (101) held by the wafer support. An anode (109) is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus (111) between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

公开(公告)号：MY157906A

公开(公告)日：2016-08-15

申请号：MYPI20090659

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： ALEXANDER YOON HYUNGSUK ,  BOYD JOHN M ,  YEZDI DORDI ,  REDEKER FRITZ C

IPC: B05D5/12

公开(公告)号：MY147845A

公开(公告)日：2013-01-31

申请号：MYPI20085290

申请日：2007-05-25

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  WILLIAM THIE ,  ALGIRDAS VASKELIS ,  EUGENIJUS NORKUS ,  JANE JACIAUSKIENE ,  ALDONA JAGMINIENE

IPC: C23C18/38

Abstract: AN ELECTROLESS COPPER PLATING SOLUTION IS DISCLOSED HEREIN. THE SOLUTION INCLUDES AN AQUEOUS COPPER SALT COMPONENT, AN AQUEOUS COBALT SALT COMPONENT, A POLYAMINE-BASED COMPLEXING AGENT, A CHEMICAL BRIGHTENER COMPONENT, A HALIDE COMPONENT, AND A PH-MODIFYING SUBSTANCE IN AN AMOUNT SUFFICIENT TO MAKE THE ELECTROLESS COPPER PLATING SOLUTION ACIDIC. A METHOD (100) OF PREPARING AN ELECTROLESS COPPER SOLUTION IS ALSO PROVIDED.

公开(公告)号：MY147419A

公开(公告)日：2012-12-14

申请号：MYPI20080850

申请日：2006-09-22

Applicant: LAM RES CORP

Inventor： ALEXANDER YOON HYUNGSUK ,  WILLIAM THIE ,  YEZDI DORDI ,  BAILEY ANDREW D III

IPC: B23K10/00

Abstract: 17 APPARATUS FOR THE REMOVAL OF A METAL OXIDE FROM A SUBSTRATE AND METHODS THEREFOR ABSTRACT OF THE DISCLOSURE AN APPARATUS GENERATING A PLASMA FOR REMOVING METAL OXIDE FROM A SUBSTRATE IS 5 DISCLOSED. THE EMBODIMENT INCLUDES A POWERED ELECTRODE ASSEMBLY, INCLUDING A POWERED ELECTRODE, A FIRST DIELECTRIC LAYER, AND A FIRST WIRE MESH DISPOSED BETWEEN THE POWERED ELECTRODE AND THE FIRST DIELECTRIC LAYER. THE EMBODIMENT ALSO INCLUDES A GROUNDED ELECTRODE ASSEMBLY DISPOSED OPPOSITE THE POWERED ELECTRODE ASSEMBLY SO AS TO FORM A CAVITY WHEREIN THE PLASMA IS GENERATED, THE FIRST WIRE MESH BEING SHIELDED FROM THE PLASMA BY THE FIRST DIELECTRIC LAYER WHEN 10 THE PLASMA IS PRESENT IN THE CAVITY, THE CAVITY HAVING AN OUTLET AT ONE END FOR PROVIDING THE PLASMA TO REMOVE THE METAL OXIDE.

公开(公告)号：SG185337A1

公开(公告)日：2012-11-29

申请号：SG2012079166

申请日：2005-06-28

Applicant: LAM RES CORP

Inventor： YEZDI DORDI ,  BOB MARASCHIN ,  JOHN BOYD ,  FRED C REDEKER

IPC: C25D17/00 ,  C25D17/14

Abstract: 235An electroplating head including a chamber having a fluid entrance and afluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured10 to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material. [Figure 1]