公开(公告)号：MY190580A

公开(公告)日：2022-04-27

申请号：MYPI2010001857

申请日：2010-04-23

Applicant: MIMOS BERHAD

Inventor： SITI AISHAH MOHAMAD BADARUDDIN ,  TEH AUN SHIH ,  BIEN CHIA SHENG

IPC: G01N27/40 ,  B01D35/00

Abstract: The filter device (100) of the present invention comprises at least one channel (60) or trench structure formed within a substrate (20) for accommodating or supporting a predetermined amount of silicon nanowires (40) which are provided by means of in-situ growth within said channel (60). These nanowires are grown in a free standing manner within the trench structure of channel (60). An encapsulation layer (80) primarily to confine the trench structure which functions (60) is further disposed therein. A catalyst permits the growth of nanowires, whereby the catalyst may be deposited within the channel by means of physical vapour deposition, chemically or by means of self assembly.

公开(公告)号：MY159117A

公开(公告)日：2016-12-15

申请号：MYPI2011002139

申请日：2011-05-12

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  SITI AISHAH MOHAMAD BADARUDDIN

IPC: B29C41/04 ,  B29C41/22 ,  B29C41/42

Abstract: A METHOD OF FORMING STRUCTURES IN POLYMER FILMS COMPRISING THE STEPS OF PROVIDING A SILICON TEMPLATE WITH A DESIRED STRUCTURE, DEPOSITING A LAYER OF OXIDE ONTO SAID SILICON TEMPLATE, SPIN-COATING A POLYMER-BASED SOLUTION ONTO SAID OXIDE LAYER OF THE SILICON TEMPLATE TO FORM A POLYMER LAYER, CURING SAID POLYMER LAYER TO FORM A POLYMER FILM AND ETCHING SAID OXIDE LAYER TO RELEASE SAID POLYMER FILM FROM SAID SILICON TEMPLATE, WHEREIN THE DEPOSITION OF OXIDE LAYER ONTO SAID SILICON TEMPLATE FORMS A SACRIFICIAL OXIDE LAYER ON SAID SILICON TEMPLATE. THE PRESENT INVENTION FURTHER COMPRISES THE STEP OF SPIN-COATING A POLYMER-BASED SOLUTION ONTO SAID PREVIOUSLY COATED POLYMER LAYER ON THE SILICON TEMPLATE TO FORM A POLYMER FILM WITH MULTIPLE POLYMER LAYERS.

公开(公告)号：MY173650A

公开(公告)日：2020-02-13

申请号：MYPI2010005362

申请日：2010-11-15

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN BUYONG ,  SITI AISHAH MOHAMAD BADARUDDIN ,  RAHIMAH MOHD SAMAN ,  ABDUL GHANI OTHAMAN ,  DANIEL BIEN CHIA SHENG ,  AZLINA BINTI MOHD ZAIN ,  MOHSEN NABIPOOR

Abstract: The present invention relates to a sensor for determining humidity. A humidity sensor (30) comprises of a substrate (32); a bottom membrane (34) positioned above the substrate (32) and a top membrane (36) positioned above the bottom membrane (34) forming a dielectric layer (38); and a plurality of inter-digitated electrodes (40) with changing capacitance in accordance to change in humidity detected by the dielectric layer (38) embedded to the top membrane (36) wherein a plurality of trenches (42) are embedded to the bottom membrane (34) or to the substrate (32) thereby increasing area of exposure to humidity. The present invention also relates to a method for fabricating a humidity sensor.

公开(公告)号：MY178129A

公开(公告)日：2020-10-05

申请号：MYPI2010700079

申请日：2010-10-29

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  RAHIMAH MOHD SAMAN ,  SITI AISHAH MOHAMAD BADARUDDIN ,  AZLINA MOHD ZAIN ,  MUHAMAD RAMDZAN BUYONG ,  MOHAMAD FAIRUZ AMIR

Abstract: The present invention provides an ISFET sensor device and a method to fabricate the ISFET sensor device with nanostructured membrane which will improve the sensitivity and efficiency of the device. The nanostructures can be in unlimited shape or design, in the form of nanowires, nanorings or nanoparticles, fabricated with the function to increase the sensor sensitivity by increasing the surface area of the membrane exposed to the sample solution or electrolyte. The nanostructured membrane can be formed either by nanofabrication techniques which includes lithographic patterning, pattern transfer, thin film deposition and etching methods or by spin coating of nanomaterials and nanowires using various materials, not limited to, such as, Si3N4 [32], polysilicon [34] and metallic nanowires.

公开(公告)号：MY170998A

公开(公告)日：2019-09-23

申请号：MYPI20085246

申请日：2008-12-23

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN BUYONG ,  AZLINA MOHD ZAIN ,  SITI AISHAH MOHAMAD BADARUDDIN ,  MOHD ISMAHADI SYONO ,  LEE HING WAH

Abstract: The present invention provides a valveless micropump (100) comprises an inlet (110) and. an outlet ( 112); a reservoir (120) positioned between the inlet ( 110) and the outlet (112), the reservoir (120) having a chamber (130) defined therein, and the inlet (110) and the outlet (112) having a fluid communication with the chamber (130) through a respective diffuser (106, 108) serving as the valveless feature; and a fluid driving means defines at the reservoir (120), the fluid driving means operably drives fluid from the inlet (100) to the outlet (112) through the diffuser (106), the chamber (130) and the diffuser (108) accordingly.

公开(公告)号：WO2011078651A3

公开(公告)日：2011-11-24

申请号：PCT/MY2010000318

申请日：2010-12-13

Applicant: MIMOS BERHAD ,  BIEN CHIA SHENG DANIEL ,  RAHIMAH MOHD SAMAN ,  SITI AISHAH MOHAMAD BADARUDDIN

Inventor： BIEN CHIA SHENG DANIEL ,  RAHIMAH MOHD SAMAN ,  SITI AISHAH MOHAMAD BADARUDDIN

IPC: B82B3/00 ,  B82B1/00

CPC classification number: B82Y30/00 ,  B82Y15/00 ,  C23C16/4418 ,  C23C16/56

Abstract: The present invention provides the method for fabricating tungsten (24) and tungsten oxide (30) nanowires by selective CVD method process on a handle substrate (20) and insulating layer (22) with silicon nanostructure (28) in the presence tungsten hexafluoride precursor without the need to use of metal catalyst or mixed powder. This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process.

Abstract translation: 本发明提供了在存在六氟化钨前体的情况下通过选择性CVD方法在具有硅纳米结构（28）的处理衬底（20）和绝缘层（22）上制造钨（24）和氧化钨（30）纳米线的方法， 需要使用金属催化剂或混合粉末。 该方法使用下面的硅纳米结构材料，其中纳米线横向形成，与衬底一起刨平并且尺寸均匀。 制造的钨纳米线可以通过氧化或退火工艺转化为氧化钨。

公开(公告)号：WO2013154417A3

公开(公告)日：2013-10-17

申请号：PCT/MY2013/000075

申请日：2013-04-08

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  AZLINA MOHD ZAIN ,  SITI AISHAH MOHAMAD BADARUDDIN

IPC: H01L29/06 ,  C30B29/06 ,  C30B29/60 ,  C30B33/00

Abstract: The present invention relates to a method for use in fabrication of silicon dioxide nanowires, which does not require any form metal catalyst or conventional high resolution lithography. The method comprises the steps of providing a silicon based substrate (100); forming, silicon based nanostructures (200) on an insulating material and forming silicon dioxide nanowires by selective oxidation process (300); wherein the silicon based nanostructures (200) are formed on the sidewall of said insulating material; and wherein the selective oxidation process (300) includes the step of thermally oxidizing silicon nanostructures.

公开(公告)号：WO2013154417A2

公开(公告)日：2013-10-17

申请号：PCT/MY2013000075

申请日：2013-04-08

Applicant: MIMOS BERHAD

Inventor： DANIEL BIEN CHIA SHENG ,  AZLINA MOHD ZAIN ,  SITI AISHAH MOHAMAD BADARUDDIN

IPC: H01L29/06

CPC classification number: C30B29/06 ,  B82Y40/00 ,  C30B29/60 ,  C30B33/005

Abstract: The present invention relates to a method for use in fabrication of silicon dioxide nanowires, which does not require any form metal catalyst or conventional high resolution lithography. The method comprises the steps of providing a silicon based substrate (100); forming, silicon based nanostructures (200) on an insulating material and forming silicon dioxide nanowires by selective oxidation process (300); wherein the silicon based nanostructures (200) are formed on the sidewall of said insulating material; and wherein the selective oxidation process (300) includes the step of thermally oxidizing silicon nanostructures.

Abstract translation: 本发明涉及一种用于制造二氧化硅纳米线的方法，其不需要任何形式的金属催化剂或常规的高分辨率光刻技术。 该方法包括以下步骤：提供硅基衬底（100）; 在绝缘材料上形成硅基纳米结构（200）并通过选择性氧化工艺形成二氧化硅纳米线（300）; 其中所述硅基纳米结构（200）形成在所述绝缘材料的侧壁上; 并且其中所述选择氧化工艺（300）包括热氧化硅纳米结构的步骤。