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    POWER SWITCH WITH CONTROLLED DI/DT
    2.
    发明专利
    POWER SWITCH WITH CONTROLLED DI/DT 失效

    公开(公告)号：JP2000200909A

    公开(公告)日：2000-07-18

    申请号：JP36690699

    申请日：1999-12-24

    Applicant: ST MICROELECTRONICS SA

    Inventor： JEAN JALADE ,  JEAN-LOUIS SANCHEZ ,  LAUR JEAN-PIERRE ,  BREIL MARIE ,  AUSTIN PATRICK ,  BERNIER ERIC ,  MATHIEU ROY

    IPC: H01L29/74 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L29/739 ,  H01L29/78 ,  H01L21/06

    Abstract: PROBLEM TO BE SOLVED: To obtain a part of a minimum surface to a fixed maximum current by checking a thyristor type part. SOLUTION: An auxiliary thyristor 13 is a vertical thyristor, and a cathode corresponds to an N-type region N5 formed in a well likewise. A part of a region P4 between regions N4 and N5 is covered with an insulation gate G2 and regions N4-P4-N5 corresponds to an N-channel enhancement MOS transistor M. An IGBT 14 is made a multicellor part. When the surface of a rear is covered with a P-type layer P1, a vertical IGBT is formed, and a cathode corresponds to metallization formed on regions P6, N6 and an anode corresponds to a surface at a rear side of a part. For a cell corresponding to a well P6, conduction takes place starting from an anode A towards metallization which covers the source N6, and the region N5 and then towards the region N4 and a cathode K. Next, conduction of a thyristor is checked.

    NORMALLY-ON BIDIRECTIONAL SWITCH
    3.
    发明专利
    NORMALLY-ON BIDIRECTIONAL SWITCH 失效

    公开(公告)号：JPH11243190A

    公开(公告)日：1999-09-07

    申请号：JP36275198

    申请日：1998-12-21

    Applicant: ST MICROELECTRONICS SA

    Inventor： RAULT PIERRE ,  BERNIER ERIC

    IPC: H01L29/74 ,  H01L27/06 ,  H01L27/08 ,  H01L29/747 ,  H03K17/00 ,  H03K17/0814 ,  H03K17/725

    Abstract: PROBLEM TO BE SOLVED: To provide a normally-on bidirectional switch, which is lessened in power consumption in an off-state and in number of required elements by a method, wherein a switch in which two thyristors each related to positive half- wave and the negative half-wave of an alternating supply voltage are used is additionally provided. SOLUTION: A switch 3 is equipped with a first cathode-gate thyristor 39 which is connected in parallel between power supply terminals 32 and 33, and the anode of the thyristor 39 is connected to the first power supply terminal 33. Furthermore, the switch 3 is equipped with a second anode-gate thysristor 40, and the anode of the thyristor 40 is connected to the other power supply terminal 32. A gates Gc and Ga of the thyristors 39 and 40 is connected to the power supply terminal 33 through the same resistor R3 and the terminal 32 through a control switch 34. A protective diode 41 is interposed between the cathode of the thyristor 40 and the terminal 33. With this setup, a thyristor is not required to be used as an active power switch, and moreover the required high-voltage devices can be reduced in number.

    6.
    发明专利
    未知

    公开(公告)号：DE69609558D1

    公开(公告)日：2000-09-07

    申请号：DE69609558

    申请日：1996-05-06

    Applicant: ST MICROELECTRONICS SA

    Inventor： BERNIER ERIC

    IPC: H01L27/06 ,  H01L27/02 ,  H02H9/04 ,  H04Q3/42

    Abstract: The component includes an n-type substrate (3) whose rear face has a heavily-doped layer (4) under its metallisation (21), to which the cathodes of the two diodes and the collectors of the two n-p-n transistors are earthed. The anodes of the diodes are formed in heavily-doped p-type regions (5,6), and the transistors occupy a lightly-doped p-well (7) with metallisations (24,25) connecting their emitters to the anodes of the corresponding diodes.

    9.
    发明专利
    未知

    公开(公告)号：FR2816127B1

    公开(公告)日：2003-04-04

    申请号：FR0014005

    申请日：2000-10-31

    Applicant: ST MICROELECTRONICS SA

    Inventor： JALADE JEAN ,  LAUR JEAN PIERRE ,  SANCHEZ JEAN LOUIS ,  AUSTIN PATRICK ,  BREIL MARIE ,  BERNIER ERIC

    IPC: H02M1/08 ,  H02M5/257 ,  H01F38/00

    Abstract: The invention concerns the control of thyristor-type semiconductor power components (Sw) powered by an alternating current network (VS). The control signal is a pulse (Ie). It is stored in the form of magnetic induction (B), positive or negative, in a core (T) made of ferromagnetic material. At each current alternation of the network, the interrogation of the magnetic state of the strand results in the presence, or not, of a control signal on the power device (Sw).

    10.
    发明专利
    未知

    公开(公告)号：DE69426319T2

    公开(公告)日：2001-03-29

    申请号：DE69426319

    申请日：1994-08-03

    Applicant: ST MICROELECTRONICS SA

    Inventor： BERNIER ERIC ,  BERTHIOT DENIS

    IPC: H01L29/74 ,  H01L29/744 ,  H05B41/04

    Abstract: The present invention relates to an amplifying gate thyristor comprising a main thyristor and an amplifying thyristor. The amplifying thyristor (GTO) is of the gate turn-on type. The main thyristor (T1) and the amplifying thyristor (GTO) are produced in such a way that the amplifying thyristor is conducting while the main thyristor is normally conducting. One application of the present invention resides in the switches associated with ballasts of fluorescent lamps fed by rectified alternating current.

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