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公开(公告)号：DE69613983D1
公开(公告)日：2001-08-23
申请号：DE69613983
申请日：1996-10-30
Applicant: ST MICROELECTRONICS SRL
Inventor： KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , LEONG PHILIP , ONORATO MARCO , ROLANDI PIER LUIGI , SABATINI MARCO
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公开(公告)号：DE602006013935D1
公开(公告)日：2010-06-10
申请号：DE602006013935
申请日：2006-03-31
Applicant: ST MICROELECTRONICS SRL
Inventor： MARTINELLI ANDREA , SCHIPPERS STEFAN , ONORATO MARCO
IPC: G11C11/56
Abstract: Method for programming a memory device (30) of the type comprising a matrix of memory cells (35) divided in buffers of cells (35) capacitively uncoupled from each other, the method comprising the steps of: - first programming of said cells (35) belonging to a buffer (B); - second programming of said cells (35) belonging to said buffer (B); said step of first programming occurs with a ramp gate voltage having first pitch (p1) and programs said cells of said buffer (B) with higher threshold distribution and said step of second programming occurs with a ramp gate voltage having pitch (p2) lower than the pitch (p1). The invention also relates to a memory device suitable for implementing the method proposed.
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公开(公告)号：ITVA20050028A1
公开(公告)日：2006-11-04
申请号：ITVA20050028
申请日：2005-05-03
Applicant: ST MICROELECTRONICS SRL
Inventor： ALBANO CARMELA , EL-MOUTAOUAKIL MOUNIA , ONORATO MARCO , VIMERCATI DANIELE
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公开(公告)号：DE69613983T2
公开(公告)日：2002-04-04
申请号：DE69613983
申请日：1996-10-30
Applicant: ST MICROELECTRONICS SRL
Inventor： KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , LEONG PHILIP , ONORATO MARCO , ROLANDI PIER LUIGI , SABATINI MARCO
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