公开(公告)号：EP3912953A1

公开(公告)日：2021-11-24

申请号：EP21174844.7

申请日：2021-05-19

Applicant: STMicroelectronics S.r.l.

Inventor： ALLEGATO, Giorgio ,  CORSO, Lorenzo ,  GELMI, Ilaria ,  VALZASINA, Carlo

IPC: B81B7/02

Abstract: Process for manufacturing a MEMS device (30), wherein a first structural layer (41) of a first thickness is formed on a substrate (31); first trenches (58) are formed through the first structural layer (41); masking regions (60') separated by first openings (62) are formed on the first structural layer; a second structural layer (42) of a second thickness is formed on the first structural layer (41) in direct contact with the first structural layer (41) at the first openings (62) and forms here, together with the first structural layer, thick structural regions (64) having a third thickness equal to the sum of the first and the second thicknesses; a plurality of second trenches (67) are formed through the second structural layer (42), over the masking regions (60'); and third trenches (68) are formed through the first and the second structural layers (41, 42) by removing selective portions of the thick structural regions (64) .

公开(公告)号：EP3872472A1

公开(公告)日：2021-09-01

申请号：EP21159179.7

申请日：2021-02-25

Applicant: STMicroelectronics S.r.l.

Inventor： AZPEITIA URQUIA, Mikel ,  ALLEGATO, Giorgio

IPC: G01L19/06

Abstract: A semiconductor device for ambient sensing including: a cap (18) traversed by a hole (25); and a main body (17) mechanically coupled to the cap (18) so as to delimit a cavity (20), which is interposed between the main body and the cap. The main body includes a semiconductor body (2) and a coupling structure (32; 132), which is interposed between the semiconductor body and the cap and laterally delimits a channel (35; CH1-CH8), which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.

公开(公告)号：EP3457709A1

公开(公告)日：2019-03-20

申请号：EP18194622.9

申请日：2018-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： PERLETTI, Matteo ,  VERCESI, Federico ,  ADORNO, Silvia ,  ALLEGATO, Giorgio

IPC: H04R1/08 ,  H04R31/00 ,  B81B7/00 ,  B81C1/00

Abstract: A method for manufacturing a filtering module (52) comprising the steps of: forming a multilayer body comprising a filter layer (104; 208; 308) of semiconductor material and having a thickness of less than 10 pm, a first structural layer (101; 212; 312) coupled to a first side of the filter layer, and a second structural layer (110; 201; 301) coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings (58), which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane (56) designed to inhibit passage of contaminating particles.

公开(公告)号：EP4361091A1

公开(公告)日：2024-05-01

申请号：EP23203161.7

申请日：2023-10-12

Applicant: STMicroelectronics S.r.l.

Inventor： SHAW, Mark Andrew ,  CORSO, Lorenzo ,  GARAVAGLIA, Matteo ,  ALLEGATO, Giorgio

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B2207/0720130101 ,  B81C2203/015420130101 ,  B81C2203/079220130101

Abstract: Device formed by a first die (210) and a second die (221). The first die is of semiconductor and integrates electronic components (202). The second die has a main surface (210A), forms patterned structures (230) and is bonded to the first die. Internal electrical coupling structures (242) electrically couple the main surface (210A) of the first die (210) to the second die (221). External connection regions (241) extend on the main surface of the first die (210). A package (246) embeds the first die (210), the second die (221) and the internal electrical coupling structures (242) and partially surrounds the external connection regions (241), the external connection regions partially protruding from the package. The second die (221) has through recesses (207, 208) accommodating external connection regions

公开(公告)号：EP4322410A1

公开(公告)日：2024-02-14

申请号：EP23188080.8

申请日：2023-07-27

Applicant: STMicroelectronics S.r.l.

Inventor： VERCESI, Federico ,  GATTERE, Gabriele ,  ALLEGATO, Giorgio ,  AZPEITIA URQUIA, Mikel ,  DANEI, Alessandro

IPC: H03K17/975

Abstract: A microelectromechanical button device (5) is provided with a detection structure (14) having: a substrate (22) of semiconductor material with a front surface (22a) and a rear surface (22b); a buried electrode (28) arranged on the substrate; a mobile electrode (32), arranged in a structural layer (30) overlying the substrate and elastically suspended above the buried electrode at a separation distance so as to form a detection capacitor (Cd); and a cap (46) coupled over the structural layer and having a first main surface (46a) facing the structural layer and a second main surface (46b) that is designed to be mechanically coupled to a deformable portion (3) of a case (2) of an electronic apparatus (1) of a portable or wearable type. The cap has, on its first main surface, an actuation portion (48) arranged over the mobile electrode and configured to cause, in the presence of a pressure applied on the second main surface, a deflection of the mobile electrode and its approach to the buried electrode, with a consequent capacitive variation of the detection capacitor, which is indicative of an actuation of the microelectromechanical button device.

公开(公告)号：EP3151271A1

公开(公告)日：2017-04-05

申请号：EP16161856.6

申请日：2016-03-23

Applicant: STMicroelectronics S.r.l.

Inventor： TOCCHIO, Alessandro ,  VALZASINA, Carlo ,  GUERINONI, Luca ,  ALLEGATO, Giorgio

IPC: H01L23/13 ,  B81B7/00 ,  B81C1/00 ,  G01L19/14 ,  H01L21/56

CPC classification number: B81B7/0048 ,  B81C1/00325 ,  H01L23/055 ,  H01L23/13 ,  H01L23/16 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48235 ,  H01L2224/73265 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15313 ,  H01L2924/16195 ,  H01L2924/16251 ,  H01L2924/3511 ,  H01L2924/00012

Abstract: An encapsulated device of semiconductor material wherein a chip (56) of semiconductor material is fixed to a base element (52) of a packaging body (51) through at least one pillar element (60) having elasticity and deformability greater than the chip, for example a Young's modulus lower than 300 MPa. In one example, four pillar elements (60) are fixed in proximity of the corners of a fixing surface (56A) of the chip and operate as uncoupling structure, which prevents transfer of stresses and deformations of the base element to the chip.

Abstract translation: 半导体材料的worin半导体材料的芯片（56）封装的器件是通过具有弹性的和可变形大于所述芯片，用于至少一个支柱元件（60）固定于包装体（51）的基部元件（52） 实施例的杨氏模量低于300兆帕。 在一个例子中，四个支柱元件（60）被固定在所述芯片的一个固定表面（56A）的角部的接近和作为解偶联结构，这防止应力和底座元件的芯片的变形的转移操作。

公开(公告)号：EP4324785A1

公开(公告)日：2024-02-21

申请号：EP23183560.4

申请日：2023-07-05

Applicant: STMicroelectronics S.r.l.

Inventor： ALLEGATO, Giorgio ,  NICOLI, Silvia ,  ALESSANDRI, Anna ,  GARAVAGLIA, Matteo

IPC: B81B7/00 ,  H01L23/552

Abstract: Electronic device including: a MEMS sensor device (20; 120) including a functional structure (45;144,145) which transduces a chemical or physical quantity into a corresponding electrical quantity; a cap (21) including a semiconductive substrate (2); and a bonding dielectric region (19), which mechanically couples the cap (21) to the MEMS sensor device (20;120). The cap (21) further includes a conductive region (10;110), which extends between the semiconductive substrate (2) and the MEMS sensor device (20;120) and includes: a first portion (12;112), which is arranged laterally with respect to the semiconductive substrate (2) and is exposed, so as to be electrically coupleable to a terminal at a reference potential (69,77) by a corresponding wire bonding (58); and a second portion (13;113), which contacts the semiconductive substrate (2).

公开(公告)号：EP3656478A1

公开(公告)日：2020-05-27

申请号：EP19210776.1

申请日：2019-11-21

Applicant: STMicroelectronics S.r.l.

Inventor： GATTERE, Gabriele ,  VALZASINA, Carlo ,  VERCESI, Federico ,  ALLEGATO, Giorgio

IPC: B06B1/06 ,  G10K9/122 ,  H01L41/053

Abstract: An ultrasonic microintegrated MEMS acoustic transducer (30) formed in a body (32) of semiconductor material having a first and a second surfaces (32A, 32B) opposite to one another. A first cavity (34) extends in the body (32) and delimits at the bottom a sensitive portion (38), which extends between the first cavity (34) and the first surface (32A) of the body (32). The sensitive portion houses a second cavity (42) and forms a membrane (45) that extends between the second cavity (42) and the first surface (32A) of the body (32). An elastic supporting structure (40, 40A-40D) extends between the sensitive portion (38) and the body (32) and is suspended over the first cavity (34).

公开(公告)号：EP3263517A1

公开(公告)日：2018-01-03

申请号：EP16206887.8

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： ALLEGATO, Giorgio ,  OGGIONI, Laura ,  GARAVAGLIA, Matteo ,  SOMASCHINI, Roberto

IPC: B81C1/00

CPC classification number: B81C1/00269 ,  B81B3/0097 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/042 ,  B81B2203/0315 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/037

Abstract: A microelectromechanical device having a first substrate (330) of semiconductor material and a second substrate (340) of semiconductor material having a bonding recess (331) delimited by projecting portions (334), monolithic therewith. The bonding recess forms a closed cavity (324) with the first substrate. A bonding structure (336) is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure (345) is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

Abstract translation: 一种具有半导体材料的第一衬底（330）和半导体材料的第二衬底（340）的微机电装置，该半导体材料具有由与其整体形成的突出部分（334）限定的键合凹槽（331）。 结合凹部与第一衬底形成封闭空腔（324）。 接合结构（336）布置在封闭的空腔内并且接合到第一和第二基板。 微电子机械结构（345）形成在第一和第二衬底之间选择的衬底中。 该器件通过在第一晶片中形成键合凹槽来制造; 将结合物质沉积在结合凹部中，结合物质具有比结合凹部更大的深度; 并粘合两个晶片。