公开(公告)号：WO2013061313A1

公开(公告)日：2013-05-02

申请号：PCT/IB2012/055982

申请日：2012-10-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： LOSA, Stefano ,  PEZZUTO, Raffaella ,  CAMPEDELLI, Roberto ,  AZPEITIA URQUIA, Mikel ,  PERLETTI, Matteo ,  ESPOSITO, Luigi

IPC: B81C1/00

CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

Abstract: A method for manufacturing a protective layer (25) for protecting an intermediate structural layer (22) against etching with hydrofluoric acid (HP), the intermediate structural layer (22) being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer (22); performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer (25a),- forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallisation process on the second layer of aluminium oxide, forming a second intermediate protective layer (25b) and thereby completing the formation of the protective layer (25). The method for forming the protective layer (25) can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

Abstract translation: 一种用于制造用于保护中间结构层（22）以防止用氢氟酸（HP）蚀刻的保护层（25）的方法，所述中间结构层（22）由可被氢氟酸蚀刻或损坏的材料制成， 该方法包括以下步骤：通过原子层沉积在中间结构层（22）上形成第一氧化铝层; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层（25a）， - 通过原子层沉积形成第二层氧化铝，在第一中间保护层上方; 以及对所述第二氧化铝层进行热结晶处理，形成第二中间保护层（25b），从而完成所述保护层（25）的形成。 形成保护层（25）的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。

公开(公告)号：EP3457709A1

公开(公告)日：2019-03-20

申请号：EP18194622.9

申请日：2018-09-14

Applicant: STMicroelectronics S.r.l.

Inventor： PERLETTI, Matteo ,  VERCESI, Federico ,  ADORNO, Silvia ,  ALLEGATO, Giorgio

IPC: H04R1/08 ,  H04R31/00 ,  B81B7/00 ,  B81C1/00

Abstract: A method for manufacturing a filtering module (52) comprising the steps of: forming a multilayer body comprising a filter layer (104; 208; 308) of semiconductor material and having a thickness of less than 10 pm, a first structural layer (101; 212; 312) coupled to a first side of the filter layer, and a second structural layer (110; 201; 301) coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings (58), which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane (56) designed to inhibit passage of contaminating particles.

公开(公告)号：EP3247134A1

公开(公告)日：2017-11-22

申请号：EP16206878.7

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： VARISCO, Igor ,  LAMAGNA, Luca ,  ADORNO, Silvia ,  PERLETTI, Matteo ,  GATTERE, Gabriele ,  VALZASINA, Carlo ,  CONTI, Sebastiano

IPC: H04R19/00 ,  H04R31/00 ,  B81C1/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C1/00166 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

Abstract: A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

Abstract translation: 一种MEMS声换能器（20），其设置有：半导体材料的衬底（21），其具有相对于竖直方向（z）相对的后表面（21b）和前表面（21a）; 形成在所述基板（21）内的从所述背面（21b）延伸到所述前表面（21a）的第一空腔（22）; 设置在所述上​​表面（21a）处并悬挂在所述第一腔体（22）上方并沿其周边锚定到所述基底（21）的膜（23）; 以及包括耦合到所述膜（23）的多个可动电极（29）和耦合到所述衬底（21）并且面向相应的可动电极（29）以形成的多个固定电极（30）的梳状指状电极布置 感测电容器，其中由于入射声压波导致膜（23）的变形导致感测电容器的电容变化（ΔC）。 特别地，梳形电极装置相对于膜（23）垂直放置并且与其平行地延伸。