Abstract:
The invention relates to a sense amplifier structure (5) for multi-level non-volatile memories, as well as to a method of reading the contents of the memory cells. In particular, a current (Ic) drawn by a memory cell to be read is compared to a current (Irif) drawn by a reference cell through a sense amplifier (2) that has one input terminal (I1) connected to a circuit node to which said currents are led. Advantageously, the currents are compared at both inputs of the sense amplifier (2) by connecting a second input (I2) of said amplifier (2) to a circuit node to which said currents are led, with opposite signs. The invention enhances the read precision of the sense amplifier for a given data acquisition time by doubling the differential input voltage.
Abstract:
Output buffer in which the switching speed of the transistors (4,5) of the output stage (1) is kept constant, independently of the variations of the supply voltage (Vcc) and of the temperature, within the acceptable operating range for the device, by controlling, as a function of the supply voltage and the operating temperature detected by a correction circuit (14), the conductivity of additional transistors (13,15) in series with the transistors (7,8) of the predriving stage (2) which drive the transistors of the output stage in conduction, the transistors being driven by an analog signal (CNTRN, CNTRP) which is generated by the correction circuit (14) and is variable with the supply voltage and the operating temperature.
Abstract:
Described herein is a device (20) for timing random reading of a memory device with a data access time (T A ), in which reading is performed by means of a succession of consecutive operations, the timing device (20) being designed to generate, for each operation, a corresponding timing signal (PS(i)) such as to cause, whatever the operating condition of the memory device, the corresponding operation to last for a time equal to a respective fixed duration (T F (i)), which is determined so as to guarantee completion of the operation in the worst operating condition of the memory device within the fixed duration (T F (i)); the sum of the fixed durations (T F (i)) being equal to the data access time (T A ) of the memory device.
Abstract:
A circuit (125,130) for biasing an input node (Na) of a sense amplifier (115) is proposed. The circuit includes means (125) for keeping the input node at a pre-set operative voltage during a sensing operation; the circuit of the invention further includes means (250) for pulling the input node from a starting voltage towards a power supply voltage (+Vdd), the operative voltage being comprised between the starting voltage and the power supply voltage, and control means (255) for disabling the means for pulling before the input node reaches the operative voltage.
Abstract:
A method for configuring a voltage regulator (20) connected to a memory cell (1) is described, the method comprising the steps of:
identifying at least a first and a second operation regions of the cell (1); associating the first and second operation regions with respective first and second operation conditions of the cell (1); detecting an operative condition of the cell (1) involved in a programming operation; generating at least a configuration signal (EN_LOW_IPROG_HV) of the regulator according to said detected operative condition, this configuration signal (EN_LOW_IPROG_HV) taking a first and a second value associated with the first and second operation conditions.
Abstract:
A description has been given of a regulator for a digital-to-analog converter having in input a digital signal (BUS ) and being suitable for providing an analog signal (Vout) in output. The regulator comprises at least one pair of buffers (Buf1, Buf2..Bufn) having in input said digital signal (BUS ) and the outputs connected to a pair of circuit branches (r1, r2..rn) connected to the output of the regulator; each of said at least two circuit branches comprises at least one resistance. To at least one (Buf2, Buf3...Bufn)) of said at least one pair of buffers a variable resistance (Rv2...Rvn) is associated and the regulator comprises means (10) having in input the analog signal and being suitable for measuring its trend and acting on the variable resistance (Rv2...Rvn) in response to its possible anomalous trend compared to a desired trend.