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1.发明授权Microelectromechanical structure comprising distinct parts mechanically connected through a translation/rotation conversion assembly 有权具有不同零件一种微机电结构，该结构是由一种用于在旋转运动的平移转换连接在一起机械
公开(公告)号：EP1180848B1
公开(公告)日：2010-01-20
申请号：EP00830570.8
申请日：2000-08-09
Applicant: STMicroelectronics S.r.l.
Inventor： Mastromatteo, Ubaldo , Murari, Bruno
CPC classification number: H02N1/004 , B81B3/0051 , B81B2201/045 , B81B2203/051 , B81B2203/058 , F16H21/02 , G02B26/0841 , G02B26/0866
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2.发明授权
公开(公告)号：EP1336993B1
公开(公告)日：2006-12-27
申请号：EP02425079.7
申请日：2002-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Casati, Paolo , Maierna, Amedeo , Murari, Bruno
IPC: H01L23/495
CPC classification number: H01L23/49568 , H01L23/4334 , H01L23/49503 , H01L23/552 , H01L2224/83855 , H01L2924/01079 , H01L2924/01322 , H01L2924/3025
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3.发明授权Method for the electrical and mechanical interconnection of microelectronic components 有权一种用于微电子元件的电气和机械连接的方法
公开(公告)号：EP1085568B1
公开(公告)日：2004-07-07
申请号：EP99830586.6
申请日：1999-09-17
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Mastromatteo, Ubaldo , Vigna, Benedetto
IPC: H01L21/60
CPC classification number: H01L24/81 , H01L23/345 , H01L24/98 , H01L2224/05568 , H01L2224/05573 , H01L2224/16148 , H01L2224/81191 , H01L2224/81192 , H01L2224/81234 , H01L2224/81815 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19043 , H01L2224/05599
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4.发明授权Bi-dimensional position sensor of magnetic type, particularly for motor vehicle applications 失效二维磁性位置传感器，特别是用于汽车应用
公开(公告)号：EP0881468B1
公开(公告)日：2003-07-30
申请号：EP98109368.5
申请日：1998-05-22
Applicant: STMicroelectronics S.r.l.
Inventor： Sax, Herbert , Murari, Bruno , Villa, Flavio , Vigna, Benedetto , Ferrari, Paolo
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5.发明公开Electronic semiconductor device having a heat spreader 有权Elektronischer Halbleiterbaustein mitWärmeverteiler
公开(公告)号：EP1162661A1
公开(公告)日：2001-12-12
申请号：EP00830407.3
申请日：2000-06-06
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Mastromatteo, Ubaldo , Vigna, Benedetto
CPC classification number: H01L24/01 , H01L23/3157 , H01L23/36 , H01L23/3735 , H01L23/4827 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082
Abstract: The electronic device (15) is formed in a die including a body (2) of semiconductor material having a first face (9) covered by a covering structure (7, 10) and a second face (12). An integral spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure (7, 10) comprises a passivation region (7) and a protective region (10) of opaque polyimide; the protective region (10) and the passivation region (7) are opened (11) above the contact pads (6) for the passage of leads (22).
Abstract translation: 电子器件（15）形成在包括半导体材料的主体（2）的模具中，该半导体材料的本体（2）具有由覆盖结构（7,10）和第二面（12）覆盖的第一面（9）。 在切割成骰子之前，在制造晶片期间，金属的整体式扩展器电镀在第二面上。 覆盖结构（7,10）包括钝化区域（7）和不透明聚酰亚胺的保护区域（10）; 保护区域（10）和钝化区域（7）在接触焊盘（6）上方打开（11）以引导引线（22）通过。
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Patent Agency Ranking6.发明公开Process for manufacturing a group comprising at least two elements, one whereof includes an encapsulated micro-integrated structure, and thereby obtained group 审中-公开一种用于制备的基团，其保留至少两个元件，它保留一个护套的微一体化结构，从而获得组过程
公开(公告)号：EP1122720A1
公开(公告)日：2001-08-08
申请号：EP00830075.8
申请日：2000-02-02
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Vigna, Benedetto , Sassolini, Simone , Ratti, Francesco , Alessandri, Alberto
IPC: G11B5/55
CPC classification number: G11B5/5552
Abstract: The manufacture process comprises: forming a first wafer (20) of semiconductor material housing integrated electronic components forming a microactuator control circuit and a signal preamplification circuit (22); forming microactuators (10), each comprising a rotor (52) and a stator (51), in a surface portion of a second wafer (28) of semiconductor material; attaching the second wafer (28) to the first wafer (20), with the surface portion of the second wafer facing the first wafer; thinning the second wafer (28); attaching the second wafer (28) to a third wafer (75) to obtain a composite wafer (78); thinning the first wafer (20); cutting the composite wafer (78) into a plurality of dice (77) connected to a protection chip (75'); removing the protection chip (75'); attaching read/write transducers (6) to the dice (77); and attaching the dice to supporting blocks (3) for hard-disk drivers (1).
Abstract translation: 制造方法包括：在形成微致动器控制电路和信号前置放大电路（22），半导体材料壳体集成电子部件的第一晶片（20）; 微致动器形成（10），每个包括一个转子（52）和在所述半导体材料的第二晶片（28）的表面部分的定子（51）; 附着在第二晶片（28）到所述第一晶片（20）具有面向所述第一晶片的第二晶片的表面部分; 减薄所述第二晶片（28）; 第二晶片（28）附接至第三晶片（75），以获得复合晶片（78）; 减薄第一晶片（20）; 切割所述复合晶片（78）插入连接到一个保护芯片（75“）的骰子的多个（77）; 去除保护芯片（75“）; 附接的读/写换能器（6）连接到骰子（77）; 和骰子附着到用于硬盘驱动器支撑块（3）（1）。
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7.发明公开Suspension arm with a hollow structure for a head of a disk storage device 失效Aufhängungsarmmit hohler StrukturfürKopf einer Plattenspeichervorrichtung
公开(公告)号：EP0942412A1
公开(公告)日：1999-09-15
申请号：EP98830140.4
申请日：1998-03-13
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Vigna, Benedetto , Ferrari, Paolo
CPC classification number: G11B5/10 , G11B5/255 , G11B5/484 , G11B5/58 , G11B5/6011 , G11B21/20 , G11B21/21
Abstract: In a suspension arm (125) for at least one head (120) of a disk storage device, in which the suspension arm (125) terminates in a flexible suspension element (127) for urging the at least one head (120) towards the disk (105), the suspension element (127) has a hollow structure.
Abstract translation: 在用于盘存储装置的至少一个头部（120）的悬架臂（125）中，悬挂臂（125）终止于柔性悬挂元件（127）中，用于将至少一个头部（120）朝向 盘（105），悬挂元件（127）具有中空结构。
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8.发明授权Method for manufacturing a hard disk read/write unit, with micrometric actuation 失效一种制造硬盘读/写单元的方法，用测微致动
公开(公告)号：EP0955629B1
公开(公告)日：2004-09-15
申请号：EP98830269.1
申请日：1998-05-05
Applicant: STMicroelectronics S.r.l.
Inventor： Mastromatteo, Ubaldo , Murari, Bruno , Vigna, Benedetto , Zerbini, Sarah
CPC classification number: H02N1/006 , G11B5/5552 , G11B5/58 , Y10T29/49027 , Y10T29/49032 , Y10T29/49052 , Y10T29/49053
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9.发明公开Cascode power amplifier particularly for use in radiofrequency applications 审中-公开Kaskoden-LeistungsverstärkerinsbesonderefürHF-Anwendungen
公开(公告)号：EP1424771A1
公开(公告)日：2004-06-02
申请号：EP02425729.7
申请日：2002-11-28
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Moscatelli, Alessandro , Labate, Lorenzo
IPC: H03F1/22
CPC classification number: H03F1/223
Abstract: A power amplifier comprising at least a load element (2) and at least an active element (3) inserted, in series to each other, between a first and a second voltage reference (Vdd, GND) is described.
Advantageously, according to the invention, the load element (2) comprises a DMOS transistor (Ml).Abstract translation: 描述了功率放大器，其至少包括负载元件（2）和至少在第一和第二参考电压（Vdd，GND）之间彼此串联插入的有源元件（3）。 有利地，根据本发明，负载元件（2）包括DMOS晶体管（M1）。
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10.发明授权
公开(公告)号：EP0889460B1
公开(公告)日：2003-09-24
申请号：EP97830337.8
申请日：1997-07-04
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Vigna, Benedetto , Ferrari, Paolo
CPC classification number: G11B5/3925 , G11B5/3183
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