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公开(公告)号：EP1775259A1
公开(公告)日：2007-04-18
申请号：EP05425719.1
申请日：2005-10-14
Applicant: STMicroelectronics S.r.l.
Inventor： Combi, Chantal , Vigna, Benedetto , Ziglioli, Federico Giovanni , Baldo, Lorenzo
IPC: B81B7/02
CPC classification number: B81C1/0023 , B81B7/02 , H01L2224/48091 , H01L2224/73265 , H01L2924/1461 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
Abstract: In a substrate-level assembly (22), a device substrate (20) of semiconductor material has a top face (20a) and houses a first integrated device (1), provided with a buried cavity (3), formed within the device substrate (20), and with a membrane (4), suspended over the buried cavity (3) in the proximity of the top face (20a). A capping substrate (21) is mechanically coupled to the device substrate (20) above the top face (20a) so as to cover the first integrated device (1), in such a manner that a first empty space (25) is provided above the membrane (4). Electrical-contact elements (28a, 28b) electrically connect the integrated device (1) with the outside of the substrate-level assembly (22). The device substrate (20) integrates at least a further integrated device (1', 10) provided with a respective membrane (4'); and a further empty space (25'), fluidically isolated from the first empty space (25), is provided over the respective membrane (4') of the further integrated device (1', 10).
Abstract translation: 在衬底级组件（22）中，半导体材料的器件衬底（20）具有顶面（20a）并且容纳设置有器件衬底（3）内的掩埋腔（3）的第一集成器件（1） （20），以及在所述顶面（20a）附近悬挂在所述掩埋腔（3）上的膜（4）。 封盖基板（21）在上表面（20a）之上机械耦合到器件基板（20），以便覆盖第一集成器件（1），使得第一空间（25）设置在上面 膜（4）。 电接触元件（28a，28b）将集成器件（1）与衬底级组件（22）的外部电连接。 装置基板（20）至少集成有设置有相应膜（4'）的另外的集成装置（1'，10）; 并且在另一个集成装置（1'，10）的相应膜（4'）上方设置有与第一空空间（25）流体隔离的另外的空的空间（25'）。
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公开(公告)号：EP1162661B1
公开(公告)日：2006-09-27
申请号：EP00830407.3
申请日：2000-06-06
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Mastromatteo, Ubaldo , Vigna, Benedetto
CPC classification number: H01L24/01 , H01L23/3157 , H01L23/36 , H01L23/3735 , H01L23/4827 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082
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3.发明授权A method of producing suspended elements for electrical connection between two portions of a micro-mechanism which can move relative to one another 有权一种用于制造悬挂元件的微机构的两个部分之间的电连接方法，其是可移动的相对于彼此
公开(公告)号：EP1089261B1
公开(公告)日：2006-05-17
申请号：EP99830620.3
申请日：1999-10-01
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Vigna, Benedetto , Mastromatteo, Ubaldo
CPC classification number: G11B7/22 , G11B5/53 , G11B7/122 , Y10T29/49021 , Y10T29/49041
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4.发明授权Method for manufacturing a semiconductor material integrated microactuator, in particular for a hard disc mobile read/write head, and a microactuator obtained thereby 失效一种用于制造半导体微驱动器，特别是用于一个硬盘装置的读写头的方法，和由此产生微驱动器
公开(公告)号：EP0913921B1
公开(公告)日：2006-05-03
申请号：EP97830556.3
申请日：1997-10-29
Applicant: STMicroelectronics S.r.l.
Inventor： Ferrari, Paolo , Vigna, Benedetto
IPC: H02N1/00
CPC classification number: H02N1/006
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公开(公告)号：EP1577656A1
公开(公告)日：2005-09-21
申请号：EP04425197.3
申请日：2004-03-19
Applicant: STMicroelectronics S.r.l.
Inventor： Villa, Flavio Francesco , Barlocchi, Gabriele , Corona, Pietro , Vigna, Benedetto , Baldo, Lorenzo
IPC: G01L9/00
CPC classification number: G01L9/0073 , G01L9/0045
Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate (2), trenches (6a) are dug and delimit walls (7a); a closing layer (10) is epitaxially grown, that closes the trenches (6a) at the top and forms a suspended membrane (13); a heat treatment is performed so as to cause migration of the silicon of the walls (7a) and to form a closed cavity (11) underneath the suspended membrane; and structures (25a, 25b, 26a-26d) are formed for transducing the deflection of the suspended membrane (13) into electrical signals.
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Patent Agency Ranking6.发明授权High-performance integrated microactuator, particularly for a hard disc read/write transducer 有权特别适用于硬盘驱动器的读/写头集成了高性能微型驱动器
公开(公告)号：EP0991175B1
公开(公告)日：2005-08-17
申请号：EP98830573.6
申请日：1998-09-30
Applicant: STMicroelectronics S.r.l.
Inventor： Vigna, Benedetto
CPC classification number: H02N1/006 , G11B5/5569
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7.发明授权Remote-operated integrated microactuator, in particular for a read/write transducer of hard discs 失效远程可控集成微驱动器，特别是用于读/Schreibköpf硬盘系统
公开(公告)号：EP0977349B1
公开(公告)日：2005-07-06
申请号：EP98830464.8
申请日：1998-07-30
Applicant: STMicroelectronics S.r.l.
Inventor： Vigna, Benedetto , Zerbini, Sarah , Sassolini, Simone , Menescardi, Carlo
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8.发明授权Method for assembling an actuator device for a hard disc device, comprising a read/write transducer, a microactuator and a suspension and the actuator device thus obtained 失效中，Microaktuator和悬架和致动器装置这样获得一种用于生产的致动器用于硬盘装置，具有读/写头处理
公开(公告)号：EP0977180B1
公开(公告)日：2005-02-09
申请号：EP98830465.5
申请日：1998-07-30
Applicant: STMicroelectronics S.r.l.
Inventor： Sassolini, Simone , Zerbini, Sarah , Vigna, Benedetto , Mastromatteo, Ubaldo
IPC: G11B5/55
CPC classification number: G11B5/5552 , G11B5/11
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9.发明授权Integrated device comprising a structure for electrostatic transport of dielectric particles generated in devices for actuating hard discs, and electrostatic transport method 失效与介电粒子，其在用于硬盘的致动的装置所产生的静电输送的装置，并且静电运输方法的集成器件
公开(公告)号：EP0975085B1
公开(公告)日：2005-02-09
申请号：EP98830446.5
申请日：1998-07-22
Applicant: STMicroelectronics S.r.l.
Inventor： Murari, Bruno , Vigna, Benedetto , Ferrari, Paolo
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10.发明授权Method of fabricating integrated semiconductor devices comprising a chemoresistive gas microsensor 失效一种用于生产具有chemoresistivem气体微传感器集成的半导体器件的过程
公开(公告)号：EP0822578B1
公开(公告)日：2003-10-08
申请号：EP96830436.0
申请日：1996-07-31
Applicant: STMicroelectronics S.r.l.
Inventor： Villa, Flavio , Ferrari, Paolo , Vigna, Benedetto
IPC: H01L21/00 , H01L21/762 , H01L21/764 , G01L9/00 , G01N27/12
CPC classification number: G01N27/12 , H01L21/764
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