Abstract:
A fluidic cartridge (35; 135) for detecting chemicals, formed by a casing (40; 140), hermetically housing an integrated device (20) having a plurality of detecting regions (22) to bind with target chemicals; part of a supporting element (41; 141), bearing the integrated device; a reaction chamber (65; 165), facing the detecting regions (22); a sample feeding hole (50, 51; 150) and a washing feeding hole (52; 152), self-sealingly closed; fluidic paths (63, 64, 70, 71; 163, 164, 170, 171), which connect the sample feeding and washing feeding holes (50-52; 150, 152) to the reaction chamber (65; 165); and a waste reservoir (80; 180), which may be fluidically connected to the reaction chamber by valve elements (82, 76; 182, 176) that may be controlled from outside. The integrated device is moreover connected to an interface unit (42) carried by the supporting element (41; 141), electrically connected to the integrated device and including at least one signal processing stage and external contact regions (75; 175).
Abstract:
The cartridge-like chemical sensor (140) is formed by a housing (150) having a base (151) and a cover (152) fixed to the base and provided with an input opening (159), an output hole (169) and a channel (165) for a gas to be analyzed. The channel extends in the cover between the input opening and the output hole and faces a printed circuit board (153) carrying an integrated circuit (20) having a sensitive region (16) open toward the channel (165) and of a material capable to bind with target chemicals in the gas to be analyzed. A fan (170) is arranged in the housing, downstream of the integrated device (20), for sucking the gas after being analyzed, and is part of a thermal control system for the integrated circuit.
Abstract:
A packaged device, wherein at least one sensitive portion (7) of a chip (6) is enclosed in a chamber (4; 64; 74) formed by a package (3, 2; 33; 62, 63; 70, 73). The package has an air-permeable area (17) having a plurality of holes (15) and a liquid-repellent structure (16; 30; 56) so as to enable passage of air between an external environment and the chamber and block the passage of liquids.
Abstract:
In a substrate-level assembly (22), a device substrate (20) of semiconductor material has a top face (20a) and houses a first integrated device (1), provided with a buried cavity (3), formed within the device substrate (20), and with a membrane (4), suspended over the buried cavity (3) in the proximity of the top face (20a). A capping substrate (21) is mechanically coupled to the device substrate (20) above the top face (20a) so as to cover the first integrated device (1), in such a manner that a first empty space (25) is provided above the membrane (4). Electrical-contact elements (28a, 28b) electrically connect the integrated device (1) with the outside of the substrate-level assembly (22). The device substrate (20) integrates at least a further integrated device (1', 10) provided with a respective membrane (4'); and a further empty space (25'), fluidically isolated from the first empty space (25), is provided over the respective membrane (4') of the further integrated device (1', 10).
Abstract:
A semiconductor package comprising a substrate (20) and a damage-sensitive device (21), comprising a package substrate core (14) having an upper and a lower surface (14a, 14b), at least one pair of metal layers (12a, 12b, 13a, 13b) coating said upper and lower surfaces (14a, 14b) of the package substrate core (14); one pair of solder mask layers (11a, 11b) coating the outer metal layers (12a, 12b) of the at least one pair of metal layers (12a, 12b, 13a, 13b); and a plurality of vias (19) formed across the package substrate core (14) and the at least one pair of metal layers (12a, 12b, 13a, 13b) and a damage-sensitive device mounted on top of the upper solder mask layer. Advantageously, the plurality of vias (19) is substantially distributed according to a homogeneous pattern in an area (21 a) that is to be covered by the damage-sensitive device (21), a plurality of vias (19) being positioned so that the vias substantially coincide with an outline of said damage-sensitive device (21) that the semiconductor package substrate (20) is intended to support. A method for the production of such semiconductor package substrate is also described.
Abstract:
A semiconductor package substrate (20) suitable for supporting a damage-sensitive device (21), comprising a package substrate core (14) having an upper and a lower surface (14a, 14b), at least one pair of metal layers (12a, 12b, 13a, 13b) coating said upper and lower surfaces (14a, 14b) of the package substrate core (14); one pair of solder mask layers (11a, 11b) coating the outer metal layers (12a, 12b) of the at least one pair of metal layers (12a, 12b, 13a, 13b); and a plurality of vias (19) formed across the package substrate core (14) and the at least one pair of metal layers (12a, 12b, 13a, 13b). Advantageously, the plurality of vias (19) is substantially distributed according to a homogeneous pattern in an area (21a) that is to be covered by the damage-sensitive device (21). A method for the production of such semiconductor package substrate is also described.