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1.Process for manufacturing a micromechanical structure having a buried area provided with a filter 有权
Title translation: 一种用于与带有滤波器的掩埋区制造微机械结构的方法公开(公告)号:EP2412665B1
公开(公告)日:2013-06-19
申请号:EP11175428.9
申请日:2011-07-26
Applicant: STMicroelectronics Srl
Inventor: Ferrera, Marco , Perletti, Matteo , Varisco, Igor , Zanotti, Luca
CPC classification number: B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
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2.Micro-electro-mechanical structure having electrically insulated regions and manufacturing process thereof 有权
Title translation: 一种微机电结构与电隔离区,以及它们的制备方法公开(公告)号:EP1617178B1
公开(公告)日:2017-04-12
申请号:EP04425514.9
申请日:2004-07-12
Applicant: STMicroelectronics Srl
Inventor: Spinola Durante, Guido , Sassolini, Simone , Ferrera, Marco , Marchi, Mauro
IPC: G01C19/5769
CPC classification number: G01C19/5769
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3.Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby. 有权
Title translation: 在半导体器件中制造用于“深通孔”工艺公开(公告)号:EP1788624B1
公开(公告)日:2010-06-09
申请号:EP05425807.4
申请日:2005-11-16
Applicant: STMicroelectronics Srl
Inventor: Marchi, Mauro , Ferrera, Marco , Riva, Caterina
IPC: H01L23/48
CPC classification number: B81B7/0006 , B81B2201/0242 , B81B2201/0257 , H01L21/76267 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
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公开(公告)号:EP2202791B1
公开(公告)日:2016-01-27
申请号:EP10160512.9
申请日:2005-11-16
Applicant: STMicroelectronics Srl
Inventor: Marchi, Mauro , Ferrera, Marco , Riva, Caterina
IPC: H01L23/48 , H01L21/762 , H01L21/768 , B81B7/00
CPC classification number: B81B7/0006 , B81B2201/0242 , B81B2201/0257 , H01L21/76267 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
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5.Process for manufacturing a membrane microelectromechanical device and membrane microelectromechanical device 有权
Title translation: 一种用于制造微机电膜装置和微机电膜装置处理公开(公告)号:EP2500313B1
公开(公告)日:2014-06-04
申请号:EP12160022.5
申请日:2012-03-17
Applicant: STMicroelectronics Srl
Inventor: Corona, Pietro , Ferrera, Marco , Varisco, Igor , Campedelli, Roberto
CPC classification number: B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
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6.Process for manufacturing a membrane microelectromechanical device and membrane microelectromechanical device 有权
Title translation: Verfahren zur Herstellung einer mikroelektromechanischen Membranvorrichtung und mikroelektromechanische Membranvorrichtung公开(公告)号:EP2500313A1
公开(公告)日:2012-09-19
申请号:EP12160022.5
申请日:2012-03-17
Applicant: STMicroelectronics Srl
Inventor: Corona, Pietro , Ferrera, Marco , Varisco, Igor , Campedelli, Roberto
CPC classification number: B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
Abstract: A process for manufacturing a microelectromechanical device envisages: forming a semiconductor structural layer (3) separated from a substrate (2) by a dielectric layer (4), and opening trenches (10) through the structural layer (3), as far as the dielectric layer (4). Sacrificial portion (4a) of the dielectric layer (4) are selectively removed through the trenches (10) in membrane regions (M) so as to free a corresponding portion of the structural layer (3) that forms a membrane (11). To close the trenches (10), the wafer (1) is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane (11) so as to reach a minimum energy configuration.
Abstract translation: 微机电装置的制造方法设想:通过介电层(4)形成与基板(2)分离的半导体结构层(3),通过结构层(3)形成开口沟槽(10),只要 电介质层(4)。 电介质层(4)的牺牲部分(4a)通过膜区域(M)中的沟槽(10)被选择性地去除,以便释放形成膜(11)的结构层(3)的相应部分。 为了封闭沟槽(10),使得晶片(1)以使得膜(11)的原子迁移以达到最小能量构型的方式达到退火温度一段时间间隔。
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