公开(公告)号：US11563149B2

公开(公告)日：2023-01-24

申请号：US17357164

申请日：2021-06-24

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung Lin ,  Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

公开(公告)号：US11329195B2

公开(公告)日：2022-05-10

申请号：US16938249

申请日：2020-07-24

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/08 ,  H01L33/22 ,  H01L33/44 ,  H01L33/40 ,  H01L33/02

Abstract: A semiconductor light-emitting device includes a substrate; a first semiconductor layer and a second semiconductor layer formed on the substrate, wherein the first semiconductor layer includes a first exposed portion and a second portion; a plurality of first trenches formed on the substrate and including a surface composed by the first exposed portion; a second trench formed on the substrate and including a surface composed by the second exposed portion at a periphery region of the semiconductor light-emitting device, wherein each of the plurality of first trenches is branched from the second trench; and a patterned metal layer formed on the second semiconductor layer and including a first metal region and a second metal region, and portions of the second metal region are formed in the plurality of first trenches and the second trench to electrically connect to the first exposed portion and the second exposed portion.

公开(公告)号：US20220029054A1

公开(公告)日：2022-01-27

申请号：US17496155

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/08 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

公开(公告)号：US11145789B2

公开(公告)日：2021-10-12

申请号：US16673008

申请日：2019-11-04

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

公开(公告)号：US11011679B2

公开(公告)日：2021-05-18

申请号：US16703419

申请日：2019-12-04

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Chien-Chih Liao ,  Tzu-Yao Tseng ,  Tsun-Kai Ko ,  Chien-Fu Shen

IPC: H01L33/38 ,  H01L33/40

Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.

公开(公告)号：US10991854B2

公开(公告)日：2021-04-27

申请号：US16182241

申请日：2018-11-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L23/00 ,  H01L33/44 ,  H01L33/62 ,  H01L33/38 ,  H01L33/02 ,  H01L33/40

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US10985301B2

公开(公告)日：2021-04-20

申请号：US16001676

申请日：2018-06-06

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC: H01L27/15 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/44 ,  H01L33/48 ,  H01L25/075 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40

Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

公开(公告)号：US10411162B2

公开(公告)日：2019-09-10

申请号：US15265069

申请日：2016-09-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22 ,  H01L33/00

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

公开(公告)号：US10326065B2

公开(公告)日：2019-06-18

申请号：US15652987

申请日：2017-07-18

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun Hsieh ,  Guan-Ru He ,  Chao-Hsing Chen ,  Jui-Hung Yeh ,  Chia-Liang Hsu

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/36 ,  H01L33/38 ,  H01L21/56

Abstract: The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from that of the first segment.

公开(公告)号：US10304999B2

公开(公告)日：2019-05-28

申请号：US15846773

申请日：2017-12-19

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Yu-Chen Yang ,  Li-Ping Jou ,  Hui-Chun Yeh ,  Yi-Wen Ku

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/60 ,  H01L33/30 ,  H01L33/46 ,  H01L33/44 ,  H01L33/00

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.