Abstract:
When an electrode (29) such as a grid applied with a negative voltage is installed in front of an objective lens (23), low energy electrons among secondary electrons (25) generated from a sample (24) by an electron beam or the like is reflected by the electrode to come into a detector (22) installed in the sample (24) side, while electrons of higher energy are not detected, since they are not reflected by the electrode. Accordingly, since only the electrons of lower energy of the secondary electrons can be detected by discriminating the secondary electrons by the energy, it is possible to obtain a detection signal, e.g., rich in the information on the surface state of the sample.
Abstract:
There is provided a plasma generating apparatus having a plasma gun which can remove droplets mixed with plasma efficiently without reducing the effective amount of plasma generated by vacuum arc discharge and in which a droplet removing portion can be constituted easily and inexpensively, and precision of surface treatment of films by high purity plasma can be enhanced. Periphery of a cathode (407) of said plasma gun is surrounded by an enclosure member (420) and a droplet removing device (406) constituted by laying a plurality of droplet collecting members (411) in multilayer is provided on the inside of the enclosure member (420). The enclosure member (420), the collecting member (411) and a plasma advancing path (402) have no relation connected with an arc power supply (409) and are held in an electrically neutral floating state.
Abstract:
Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Bestimmung des Abstands (Z) einer zu untersuchenden Probe (12) von mindestens einem Referenzpunkt (19, 21). Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren und eine Vorrichtung anzugeben, die unabhängig von der Art der Probe arbeiten, wobei das Verfahren einfach durchzuführen sowie die Vorrichtung einfach ausgestaltet ist. Die Erfindung schlägt hierzu vor, einem ersten Potential einer Probe (12) ein Signal aufzumodulieren und der Probe (12) einen Primärteilchenstrahl zuzuführen, wobei aufgrund einer Wechselwirkung ein Sekundärteilchenstrahl erzeugt wird, dessen Teilchen das aufmodulierte Signal aufweisen. Die Teilchen des Sekundärteilchenstrahls sowie das dem Potential der Teilchen des Sekundärteilchenstrahls aufmodulierte Signal werden detektiert. Durch Vergleichen des detektierten aufmodulierten Signals mit einem Referenzsignal wird aus einer Relation zwischen dem Referenzsignal und dem detektierten aufmodulierten Signal der Abstand (Z) bestimmt. Die erfindungsgemäße Vorrichtung weist die entsprechenden Bauteile zur Durchführung des Verfahrens auf.
Abstract:
A method of observing a live unit under an electron microscope includes the steps of (A) preparing a live environment inside the electron microscope, wherein the live environment is provided with at least one live unit and a predetermined environmental condition keeping basic physiology of the live unit functional, at least one pair of view windows is located opposite to each other, and the live unit includes at least two objects that can bear different critical charge densities respectively; and (B) irradiating the live unit with a particle beam of predetermined intensity through the view windows, and then display the live unit on an imaging device of the electron microscope, wherein the product of the predetermined intensity of the particle beam and the predetermined duration equals the predetermined charge density that is smaller than or equal to the critical charge density of the object of the live unit.
Abstract:
Apparatus and methods are disclosed for measuring time delays between pulse streams or other input signals and for measuring ion beam energies in an ion implantation system. A variable delay apparatus is applied to one input signal, and the signals are correlated or compared in a correlator apparatus providing a minimum, maximum, or other ascertainable output signal value when a delay value of the variable delay is representative of the time delay between the first and second input signals. By adjusting or sweeping the variable delay until the ascertainable correlator apparatus output value is obtained, the actual time delay is determined as the dialed-in value of the variable delay that produces the ascertainable correlator output value. The variable delay measurement apparatus and methods may be employed in ion implantation system for measuring ion beam energies using time of flight probes, wherein the system and the time delay measurement apparatus may be calibrated to remove any residual delays of the system, such as delay offsets related to channel imbalance in the system and connecting devices. In addition, a unique error correction method is disclosed, which may be applied to the time delay measurement system measurement to minimize or mitigate errors introduced by electronic components of the system.
Abstract:
An imaging system that selectively alternates a first, non-destructive imaging mode and a second, destructive imaging mode to analyze a specimen so as to determine an atomic structure and composition of the specimen is provided. The field ionization mode can be used to acquire first images of ionized atoms of an imaging gas present in a chamber having the specimen disposed therein, and the field evaporation mode can be used to acquire second images of ionized specimen atoms evaporated from a surface of the specimen with the imaging gas remaining in the chamber. The first and second image data can be analyzed in real time, during the specimen analysis, and results can be used to dynamically adjust operating parameters of the imaging system.
Abstract:
A method for treating a substrate surface uses Neutral Beam irradiation derived from a gas-cluster ion-beam and articles produced thereby including lithography photomask substrates. One embodiment provides a method of treating a surface of a substrate that contains one or more embedded particles or contains sub-surface damage, comprising the steps of: providing a reduced pressure chamber; forming a gas-cluster ion-beam comprising gas-cluster ions within the reduced pressure chamber; accelerating the gas-cluster ions to form an accelerated gas-duster ion-beam along a beam path within the reduced pressure chamber; promoting fragmentation and/or dissociation of at least a portion of the accelerated gas-cluster ions along the beam path; removing charged particles from the beam path to form an accelerated neutral beam along the beam path in the reduced pressure chamber; holding the surface in the beam path; and treating at least a portion of the surface of the substrate by irradiation.
Abstract:
The invention is related to a laser atom probe system comprising a specimen holder (7) whereon a specimen (2) to be analyzed may be mounted, the specimen having a tip shape, a detector (3), an electrode (1), arranged between the specimen holder (7) and the detector (3), a voltage source (4) configured to apply a voltage difference between the specimen tip and the electrode, at least one laser system (5,8), configured to direct a laser beam laterally at the specimen tip, and a tip shape monitoring means (10) configured to detect and monitor the tip shape, and/or a means for altering and/or controlling one or more laser parameters of said laser beam(s) so as to maintain, restore or control said specimen tip shape.