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公开(公告)号：KR1020040083119A
公开(公告)日：2004-10-01
申请号：KR1020030017651
申请日：2003-03-21
Applicant: 한국과학기술연구원
IPC: H01L21/68
Abstract: PURPOSE: A sample fixing apparatus for adhering a semiconductor wafer is provided to adhere various kinds of wafers within a wide range of temperature by using four blocks and three combination bolts. CONSTITUTION: A holder(30) includes a loading part on which a wafer sample(40) is loaded. Bolt holes are formed at the holder in order to fix the wafer sample. A lower substrate(50) is located at a lower part of the holder. Bolt holes are formed at the lower substrate in order to fix the wafer sample. A pressing member(20) is located at an upper part of the wafer sample and is projected to an upper part of the holder. An upper substrate(10) is in contact with a projected part of the pressing member. Bolt holes are formed at the upper substrate in order to fix sample. A plurality of combination bolts(60) are inserted into each hole of the holder, the lower substrate, and the upper substrate.
Abstract translation: 目的：提供用于粘附半导体晶片的样品定影装置，通过使用四个块和三个组合螺栓在宽的温度范围内粘附各种晶片。 构成：保持器（30）包括加载有晶片样品（40）的装载部件。 在保持器上形成螺栓孔，以固定晶片样品。 下基板（50）位于支架的下部。 在下基板上形成螺栓孔，以固定晶片样品。 按压构件（20）位于晶片样品的上部并且被突出到保持器的上部。 上基板（10）与按压部件的突出部分接触。 为了固定样品，在上基板上形成螺栓孔。 多个组合螺栓（60）插入保持器，下基板和上基板的每个孔中。
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公开(公告)号：KR1020040037732A
公开(公告)日：2004-05-07
申请号：KR1020020066339
申请日：2002-10-30
Applicant: 한국과학기술연구원
IPC: G02F3/00
Abstract: PURPOSE: An all-optical memory device using an EMILD(Electro-absorption Modulator Integrated Laser Diode) structure is provided to measure optical bistability features by using an EMILD structure, and to realize an all-optical flip-flop function by using the measured features, thereby reducing cost. CONSTITUTION: A variable laser(100) selects a wavelength of an input light. A pattern generator(110) forms the input light as 'set' and 'reset' pattern optical signals. An optical attenuator(120) controls strength of the pattern optical signals. A circulator(130) determines a path of the pattern optical signals. A phase controller(140) is applied with the pattern optical signals, and controls phases. An EMILD(150) is applied with the pattern optical signals, and obtains optical bistability features. A wavelength variable filter(160) filters an output light signal, and obtains a selected wavelength signal only. An optical measurer(170) obtains all-optical flip-flop wavelength features by using the optical bistability features.
Abstract translation: 目的：提供使用EMILD（电吸收式调制器集成激光二极管）结构的全光存储器件，通过使用EMILD结构来测量光学双稳态特性，并通过使用测量特征实现全光触发器功能 ，从而降低成本。 构成：可变激光（100）选择输入光的波长。 图案生成器（110）将输入光形成为“设置”和“复位”图案光信号。 光衰减器（120）控制图案光信号的强度。 循环器（130）确定图案光信号的路径。 相位控制器（140）被施加图案光信号，并且控制相位。 EMILD（150）被应用于图案光信号，并获得光学双稳态特性。 波长可变滤波器（160）对输出光信号进行滤波，仅获得所选择的波长信号。 光学测量器（170）通过使用光学双稳态特征获得全光触发器波长特征。
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公开(公告)号：KR100405940B1
公开(公告)日：2003-12-18
申请号：KR1020010010094
申请日：2001-02-27
Applicant: 한국과학기술연구원
IPC: H01S3/136
Abstract: PURPOSE: A horizontal coupled type laser diode is provided to widen a variable wavelength range by using two active elements having different propagation constants. CONSTITUTION: A horizontal coupled type laser diode is formed by coupling horizontally the first resonator including a laser diode(100) with the second resonator including an optical amplifier(200). The optical amplifier(200) has a propagation constant which is different from the laser diode(100). The first electrode(110) and the second electrode(210) are installed in an upper end portion and a lower end portion of the laser diode(100) in order to apply current to the laser diode(100) and the optical amplifier(200), respectively. Active layers of the laser diode(100) and the optical amplifier(200) are formed by InGaAsP of a multiple quantum well structures.
Abstract translation: 目的：提供水平耦合型激光二极管以通过使用具有不同传播常数的两个有源元件来扩大可变波长范围。 组成：水平耦合型激光二极管通过将包括激光二极管（100）的第一谐振器与包括光放大器（200）的第二谐振器水平耦合而形成。 光放大器（200）具有与激光二极管（100）不同的传播常数。 第一电极（110）和第二电极（210）安装在激光二极管（100）的上端部分和下端部分中，以便将电流施加到激光二极管（100）和光放大器（200） ）， 分别。 激光二极管（100）和光放大器（200）的有源层由多量子阱结构的InGaAsP形成。
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公开(公告)号：KR1020010103086A
公开(公告)日：2001-11-23
申请号：KR1020010058131
申请日：2001-09-20
Applicant: 한국과학기술연구원
IPC: H03K19/14
CPC classification number: G02F3/00
Abstract: 본 발명은 반도체 광증폭기를 이용한 전광 ＸＯＲ 논리소자의 구현방법에 관한 것으로서, 더 상세하게는 반도체 광증폭기에 주입되는 전류와 입사되는 조사신호 및 펌프신호로 조절이 가능한 반도체 광증폭기의 인버터 특성을 이용하여 전광 XOR 논리소자를 구현할 수 있는 기술에 관한 것이다.
본 발명에 따른 XOR 논리소자의 구현방법은, 두개의 반도체 광증폭기에 펌프신호와 조사신호를 같이 입사시켜 상기 반도체 광증폭기의 이득포화와 파장변환에 의해 생기는 인버터 특성의 출력신호를 합하여 전광 XOR 논리소자의 동작특성을 얻음을 특징으로 한다.
본 발명에 의하면, 반도체 광증폭기의 인버터 특성을 이용하여 전광 XOR 논리소자를 구현하기 때문에 광섬유에 기반을 둔 소자들보다 안정적이고 다른 논리소자와의 결합이 용이하며, 클록 신호를 만들어 줄 필요가 없으므로 논리소자의 규모 및 속도 제한이 크게 줄어드는 효과가 있다.-
公开(公告)号：KR1020010077665A
公开(公告)日：2001-08-20
申请号：KR1020000005618
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L21/00
Abstract: PURPOSE: A mounting technology of a semiconductor optical device for anti-reflection coating is provided to perform the mounting technology in a stable and identical condition by preventing a sample from damaging in the anti-reflection coating. CONSTITUTION: A spacer(20), a fixing plate(30) and the second stainless(40) is deposited on the first stainless(10) in turns. A holder coupling unit(50) couples from the second stainless(40) to the first stainless(10) via each hole. A sample fixing unit(55) couples from the second stainless(40) to the fixing plate(30) via each hole. A laser bar(60) is extended at a level with the spacer(20) between the fixing plate(30) and the first stainless(10). The area size of the second stainless(40) is less than that of the first stainless(10).
Abstract translation: 目的：提供用于防反射涂层的半导体光学装置的安装技术，以通过防止样品在抗反射涂层中的损坏来以稳定和相同的状态执行安装技术。 构成：间隔件（20），固定板（30）和第二不锈钢（40）轮流沉积在第一不锈钢（10）上。 保持器联接单元（50）经由每个孔从第二不锈钢（40）连接到第一不锈钢（10）。 样品定影单元（55）经由每个孔从第二不锈钢（40）耦合到固定板（30）。 激光棒（60）在固定板（30）和第一不锈钢（10）之间的间隔件（20）的水平面上延伸。 第二不锈钢（40）的面积小于第一不锈钢（10）的面积。
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Patent Agency Ranking
公开(公告)号：KR1020200132578A
公开(公告)日：2020-11-25
申请号：KR1020190058324
申请日：2019-05-17
Applicant: 한국과학기술연구원
IPC: G01N33/543 , G01N33/68 , G01N27/327
Abstract: 본발명은그래핀기반전극을이용한수용체의특성을분석하는방법에관한것으로, 구체적으로 i) 수용체를포함하는베지클을제조하는단계; ii) 그래핀기반전극표면에지질이중층을형성하는단계; 및 iii) 순환전압전류법으로측정하는단계;를포함하는것인수용체의감응성을측정하는방법, 및특정자극에대한반응성을나타낼것으로예상되는수용체후보군을스크리닝하는방법에관한것이다. 본발명은자극에대한수용체의반응을실시간으로확인할수 있으며, 샘플의손상없이다수의샘플을동시에, 간단하게실험할수 있으므로, 다양한수용체들의자극에대한반응과신호전달메커니즘을밝히고, 인공적으로제조한수용체의성능을파악하고분석하는데유용하게이용될수 있다.
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