公开(公告)号：JP2003008143A

公开(公告)日：2003-01-10

申请号：JP2001183368

申请日：2001-06-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HINO TOMOKIMI ,  GOTO OSAMU ,  YABUKI YOSHIBUMI ,  ANZAI SHINICHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a multi-beam semiconductor laser device which outputs beams uniform in optical output and is suitably constituted so as to output large high optical power.
SOLUTION: This multi-beam semiconductor laser device is a GaN semiconductor laser device having an SCH structure, where laser stripes 44 are provided on a common sapphire board 42, and laser beams are projected from the stripe projection end faces 44a of the laser stripes provided to a cleavage plane vertical to the laser stripes 44. The laser stripes 44 are each of an air ridge type which is current-constricted by an SiO
2 film, a P-side electrode 46 is provided on each ridge, and the laser stripes 44 are formed on a common mesa 45 provided on the sapphire board 42. An N-side electrode 48 is exposed behind the common mesa 45 as a common counter electrode to the P-side electrodes 46, and provided on a contact layer 50 which extends from the rear end face of the laser stripes 44 in the direction of the laser stripes.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供在光输出中输出光束均匀的多光束半导体激光装置，其适当构成为输出大的高光功率。 解决方案：该多光束半导体激光器件是具有SCH结构的GaN半导体激光器件，其中激光条44设置在公共蓝宝石板42上，并且激光束从设置的激光条的条形突起端面44a突出 到与激光条纹44垂直的解理面。激光条44各自是由SiO 2膜电流收缩的空气脊型，在每个脊上设置P侧电极46，激光条44 形成在设置在蓝宝石板42上的公共台面45上.N侧电极48作为公共对置电极露出在共用台面45的后面，与P侧电极46接触，设置在接触层50上， 在激光条纹的方向上的激光条纹44的后端面。

公开(公告)号：JP2001267691A

公开(公告)日：2001-09-28

申请号：JP2000404035

申请日：2000-12-08

Applicant: SONY CORP

Inventor： SHIBUYA KATSUYOSHI ,  ASANO TAKEHARU ,  KIJIMA SATORU ,  YANASHIMA KATSUNORI ,  TAKEYA MOTONOBU ,  IKEDA MASAO ,  HINO TOMOKIMI ,  YAMAGUCHI KYOJI ,  IKEDA MASAAKI ,  GOTO OSAMU

IPC: C23C16/34 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element and its manufacturing method for improving crystallization of nitride-based III-V group compound semiconductor on a sapphire substrate. SOLUTION: After a seed crystal layer 12 with a crystal part 12A made of nitride-based III-V group compound semiconductor crystal and an opening 12B is formed on a sapphire substrate, a recess 11B continuously joined to the opening 12B is formed in the sapphire substrate. An n-side contact layer 15 is grown from the crystal part 12A. As a result, a crystal grown sidewise from the crystal part 12A is prevented from being in contact with the sapphire substrate 11, and the n-side contact layer 15 and the nitride-based III-V group compound semiconductor crystal have a low density of through dislocation while a fluctuation in crystal orientation is made small.

公开(公告)号：JP2001230502A

公开(公告)日：2001-08-24

申请号：JP2000041361

申请日：2000-02-15

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: G02B6/42 ,  H01L25/075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01L33/32 ,  H01S5/02 ,  H01S5/022 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting device, which can be easily manufactured and can precisely control an output position of a light, and an optical device using the light-emitting device. SOLUTION: A first light-emitting element 20 and a second light-emitting element 30 are formed on one surface side of a retaining base substance 11. The first light-emitting element 20 has an active layer 23, composed of GaInN mixed crystal on the retaining base substance 11 side of a first substrate 21 composed of GaN. The second light-emitting element 30 has laser oscillating parts 40, 50 on the retaining base substance 11 side of a second substrate 31 made of GaAs. Since growing of the first light-emitting element 20 and the second light-emitting element 30 on the same substrate is unnecessary, a multi- wavelength laser having light-emitting wavelengths of about 400 nm can be easily obtained. Since the first substrate 21 is composed of material which is transparent in a visible region, positions of the light-emitting regions of the first light-emitting element 20, and the second light-emitting element 30 can be controlled precisely by using lithographic technique.

公开(公告)号：JP2000244070A

公开(公告)日：2000-09-08

申请号：JP4170899

申请日：1999-02-19

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve conductivity by making current easy to flow across a hetero interface in a semiconductor device or a semiconductor light-emitting element containing the hetero interface where two nitride III-V compound semiconductor layers different from each other are in contact with each other and a band discontinuity exists. SOLUTION: In a semiconductor device or a semiconductor light-emitting element containing a hetero interface where two nitride III-V compound semiconductor layers different from each other are in contact with each other and a band discontinuity exists, a superlattice layer or a composition gradient layer extinguishing or decreasing the band discontinuity falsely is inserted in the hetero interface. In a GaN semiconductor laser, an n-type AlGaN/GaN superlattice layer 5 or an n-type AlGaN graded layer is inserted in a hetero interface between an n-type GaN contact layer 4 and an n-type AlGaN clad layer 6, and a p-type AlGaN/GaN superlattice layer 12 or a p-type AlGaN graded layer is inserted in a hetero interface between a p-type AlGaN clad layer 11 and a p-type GaN contact layer 13.

公开(公告)号：JPH11126948A

公开(公告)日：1999-05-11

申请号：JP29303697

申请日：1997-10-24

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/02 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device in which the density of through transfers can be reduced on the entire surface and the film thickness of which can be reduced, a method for manufacturing the device, and a semiconductor light emitting device. SOLUTION: After a base layer 3 is formed on a sapphire substrate 1 through a buffer layer 2, a first selectively grown GaN layer 5a is selectively grown on the base layer 3 through a first SiO2 mask layer 4a having a plurality of openings 4c and a second selectively grown layer 5b is similarly grown in the layer 5a through a second mask layer 4b. At the time of growing the layer 5b, the mask sections 4d of the second mask layer 4 are formed over the openings 4c of the first mask layer 4a. Thereafter, a semiconductor layer composed of a III nitride compound semiconductor is laminated upon the layer 5b. Through transfers in the base layer 3 are interrupted by the first and second mask layers 4a and 4b and not transmitted to the semiconductor layer.

公开(公告)号：JPH1174203A

公开(公告)日：1999-03-16

申请号：JP16975998

申请日：1998-06-17

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  HASHIMOTO SHIGEKI ,  NAKAMURA FUMIHIKO ,  YANASHIMA KATSUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for growing a nitride III-V compound semiconductor which enables efficient growth of a nitride-based III-V compound semiconductor of high quality. SOLUTION: The pressure inside a reaction tube 1 of an MOCVD device is set at not less than 1.1 atm., particularly not less than 1.1 atm. and not more than 2 atm., preferably 1.2-1.8 atm., and a nitride-based III-V compound semiconductor, for example, GaN, InGaN or the like is grown. The reaction tube 1 is made of quartz glass so as to obtain sufficient strength for withstanding the difference between inner and outer pressures. The surface of a substrate 3 on which the nitride-based III-V compound semiconductor may face upward or downward.

公开(公告)号：JPH10144612A

公开(公告)日：1998-05-29

申请号：JP30206996

申请日：1996-11-13

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L21/203 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor device which can deteriorate such a first nitride family-III-V compound semiconductor layer containing In as a GaInN layer when it is necessary to grow a second nitride family-II-V compound semiconductor layer not containing In on the first compound semiconductor layer at a growth temperature higher than the growth temperature than that of the first compound semiconductor layer. SOLUTION: In a method for manufacturing a GaN semiconductor laser, a growth temperature of a p type AlGaN cladding layer 29 and a p type GaN contact layer 30, which are provided above a GaInN active layer 26 and which is necessary to be grown at a growth temperature higher than that of the active layer, is set to be above the growth temperature of the active layer 26 and below 980 deg.C, e.g. between 930 and 960 deg.C. Preferably, prior to growth of the cladding layer 29, an underlying layer is previously covered with a p type AlGaN cap layer 28 which was grown at a growth temperature equal to or lower than the growth temperature of the active layer 26.

公开(公告)号：JPH10112439A

公开(公告)日：1998-04-28

申请号：JP26462796

申请日：1996-10-04

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing an n-type nitride III-V compound semiconductor which has less crystal defects and good quality. SOLUTION: A MOCVD device 10 for implementing this method has a reaction tube 14 having inside thereof a suscepter 12 holding a substrate W, and two bubblers 20A, 20B housing TMG(trimethylgallium) and diethyl selenium, respectively, and adapted for supplying their respective gases to the reaction tube 14 through a supply line 18 by bubbling with a hydrogen gas. The substrate W is set in the reaction tube 14, and the temperature is raised to 1000 deg.C while ammonium is supplied. In addition, a hydrogen gas is supplied to the bubblers 20A, 20B, thereby introducing the TMG gas and the diethyl selenium gas into the reaction tube 14. A GaN:Se crystal to which a Se atom as an n-type dopant is introduced is epitaxially grown on the substrate W. As a result, a GaN:Se crystal of good quality having less crystal defects is provided.

公开(公告)号：JPH0997803A

公开(公告)日：1997-04-08

申请号：JP27685995

申请日：1995-09-29

Applicant: SONY CORP

Inventor： TAMAMURA KOJI ,  TSUKAMOTO HIRONORI ,  IKEDA MASAO

IPC: C30B23/02 ,  C30B29/48 ,  H01L21/203 ,  H01L21/363 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/347 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor layer which has an excellent crystallinity by optimizing the ratio of the actual strength of the molecular beam of a VI group element to the actual strength of the molecular beam of a II group ele ment at the time of growing. SOLUTION: For example, on a (100) plane orientation (n) type GaAs substrate 21, an (n) type ZnSe buffer layer 22, an (n) type ZnSy Se1-y optical waveguide layer 23, a Zn1-x Cdx Se activation layer 24 and a (p) type ZnSy Se1-y waveguide layer 25 are successively grown, and a semiconductor light emitting element is manufactured. The (n) type ZnSe buffer layer and the (n) type ZnSy Se1-y optical guide layer 23 are doped with chlorine each as the doner impurity. The (p) type ZnSy Se1-y optical waveguide layer 25, is doped with N as the acceptor impurity. Since the actual VI/II ratio at the time of growing is optimized in this manner, the effect of taking cadmium into the growing layer is increased, and the II-VI compound semiconductor layer containing cadmium with excellent crystallinity is obtained.

公开(公告)号：JPH0855800A

公开(公告)日：1996-02-27

申请号：JP10599795

申请日：1995-04-28

Applicant: SONY CORP

Inventor： TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  TAMAMURA KOJI ,  IKEDA MASAO ,  ITO SATORU ,  TANIGUCHI OSAMU ,  OKUYAMA HIROYUKI

IPC: H01L21/203 ,  H01L21/205 ,  H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE:To effectively eliminate charged particles such as ions, etc., going to an object, for example, a substrate to grow a film, in a plasma generator. CONSTITUTION:This plasma generator has a plasma generation source 44 which has a plasma discharge port 48 open to the inside of a chamber 40, and an electric field or magnetic field application means for deflecting or removing charged particles such as ion species electrons, etc., in plasma is provided in the vicinity of the plasma discharge port 48 within the chamber 40.