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    Electronic device, electronic module, and methods for manufacturing the same
    101.
    发明公开
    Electronic device, electronic module, and methods for manufacturing the same 审中-公开
    一种电子装置，电子系统和用于它们的制备方法

    公开(公告)号：EP2048109A3

    公开(公告)日：2011-05-25

    申请号：EP08017806.4

    申请日：2008-10-10

    Applicant: Epson Toyocom Corporation

    Inventor： Ono, Atsushi ,  Kobayashi, Yoshihiro ,  Kitamura, Shojiro ,  Matsunaga, Masayuki ,  Hara, Akitoshi

    IPC: B81B7/00

    CPC classification number: B81B7/007 ,  B81B7/0074 ,  B81B2201/025 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15156 ,  H01L2924/15313 ,  H01L2924/16195 ,  Y10T29/49155 ,  H01L2924/00014

    Abstract: An electronic device includes: an outline configuration including a first surface, a second surface facing opposite from the first surface, and a mounting surface coupled to the first and second surfaces; a first substrate including a first electrode; a second substrate including a second electrode; a resin disposed between the first and second substrates; and an electric element sealed with the resin and having an outline configuration of a polyhedron, the electric element being disposed such that a broadest surface of the polyhedron faces one of the first substrate and the second substrate. The first surface is one surface of the first substrate, the one surface being opposite from another surface of the first substrate on a side adjacent to the resin. The second surface is one surface of the second substrate, the one surface being opposite from another surface of the second substrate on a side adjacent to the resin. The mounting surface includes: an exposed surface of the resin between the first and second substrates, and side surfaces of the first and second substrates adjacent to the exposed surface. The first electrode is disposed at an end of the first surface adjacent to the mounting surface and electrically coupled to the electric element. The second electrode is disposed at an end of the second surface adjacent to the mounting surface and electrically coupled to the electric element.

    INERTIA FORCE SENSOR
    102.
    发明公开
    INERTIA FORCE SENSOR 审中-公开
    惯性力传感器

    公开(公告)号：EP2187168A1

    公开(公告)日：2010-05-19

    申请号：EP08790513.9

    申请日：2008-08-29

    Applicant: Panasonic Corporation

    Inventor： OHKOSHI, Hideo ,  MITANI, Tomohiro

    IPC: G01C19/56 ,  G01P9/04 ,  G01P15/08

    CPC classification number: G01P1/003 ,  B81B7/0058 ,  B81B2201/025 ,  B81C1/0023 ,  G01C19/5607 ,  G01P1/023 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: An inertial sensor includes oscillating-type angular velocity sensing element (32), IC (34) for processing signals supplied from angular velocity sensing element (32), capacitor (36) for processing signals, and package (38) for accommodating angular velocity sensing element (32), IC (34), capacitor (36). Element (32) and IC (34) are housed in package (38) via a vibration isolator, which is formed of TAB tape (46), plate (40) on which IC (34) is placed, where angular velocity sensing element (32) is layered on IC (34), and outer frame (44) placed outside and separately from plate (40) and yet coupled to plate (40) via wiring pattern (42).

    Abstract translation: 惯性传感器包括振荡型角速度传感元件（32），用于处理从角速度传感元件（32）提供的信号的IC（34），用于处理信号的电容器（36）以及用于适应角速度传感的封装（38） 元件（32），IC（34），电容器（36）。 元件（32）和IC（34）通过隔振器容纳在封装（38）中，该隔振器由其上放置有IC（34）的TAB带（46），板（40）形成，其中角速度感测元件 32）层叠在IC（34）上，外框架（44）放置在外部并与板（40）分开，并通过布线图形（42）与平板（40）连接。

    SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME
    103.
    发明公开
    SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    SENSORANORDNUNG UND VERFAHREN ZU IHRER HERSTELLUNG

    公开(公告)号：EP1953816A1

    公开(公告)日：2008-08-06

    申请号：EP06833259.2

    申请日：2006-11-24

    Applicant: MATSUSHITA ELECTRIC WORKS, LTD.

    Inventor： OKUDO, Takafumi ,  SUZUKI, Yuji ,  TAKEGAWA, Yoshiyuki ,  BABA, Toru ,  GOTOU, Kouji ,  MIYAJIMA, Hisakazu ,  KATAOKA, Kazushi ,  SAIJO, Takashi

    IPC: H01L23/02 ,  G01P9/04

    CPC classification number: G01P15/0802 ,  B81B7/0051 ,  B81B7/0064 ,  B81B2201/025 ,  B81C2203/038 ,  G01C19/5719 ,  G01P1/023 ,  G01P15/125 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.

    Abstract translation: 提供了一种传感器装置，传感器特性变化小，电噪声提高。 该传感器装置具有传感器单元，该传感器单元设置有具有开口的框架，保持在开口中的可移动部分可相对于框架移动;以及检测部分，用于根据可移动的位移位移输出电信号 部分，以及由半导体材料制成的封装衬底，并结合到传感器单元的表面。 封装基板在面向传感器单元的表面上具有电绝缘膜。 通过在室温下在电绝缘膜的活化表面和传感器单元的活化表面之间形成直接接合，将封装基板结合到传感器单元。

    Electrical contact for a mems device and method of making
    105.
    发明公开
    Electrical contact for a mems device and method of making 审中-公开
    Elektrischer Kontaktfürein MEMS-Bauelement und dessen Herstellungsverfahren

    公开(公告)号：EP1760039A2

    公开(公告)日：2007-03-07

    申请号：EP06076605.2

    申请日：2006-08-21

    Applicant: Delphi Technologies, Inc.

    Inventor： Christenson, John C.

    IPC: B81C5/00

    CPC classification number: B81B7/0006 ,  B81B2201/025 ,  G01P15/0802 ,  G01P15/125

    Abstract: A method for making a subsurface electrical contact (34) on a micro-electrical-mechanical-systems (MEMS) device (10). The contact (34) is formed by depositing a layer of polycrystalline silicon (34) onto a surface (16) within a cavity (20) buried under a device silicon layer (24). The polycrystalline silicon layer (34) is deposited in the cavity (20) through holes (30 and 32) etched through the device silicon (24) and reseals the cavity (20) during the polycrystalline silicon deposition step. The polycrystalline silicon layer (24) can then be masked and etched, or etched back to expose the device layer (24) of the micromachined device (10). Through the layer of polycrystalline silicon (34), a center hub (18) of the device (10) may be electrically contacted.

    Abstract translation: 一种用于在微电子机械系统（MEMS）装置（10）上制造地下电接触（34）的方法。 通过将多晶硅层（34）沉积在掩埋在器件硅层（24）下面的空腔（20）内的表面（16）上来形成触点（34）。 多晶硅层（34）通过穿过器件硅（24）蚀刻的孔（30和32）沉积在空腔（20）中，并且在多晶硅沉积步骤期间重新密封空腔（20）。 然后可以对多晶硅层（24）进行掩模和蚀刻，或者回蚀刻以暴露微机械加工装置（10）的装置层（24）。 通过多晶硅层34，可以使器件（10）的中心毂（18）电接触。

    센서 장치 및 그 제조 방법
    106.
    发明公开
    센서 장치 및 그 제조 방법 失效
    传感器装置及其制造方法

    公开(公告)号：KR1020080066817A

    公开(公告)日：2008-07-16

    申请号：KR1020087012313

    申请日：2006-11-24

    Applicant: 파나소닉 전공 주식회사

    Inventor： 오쿠도다카후미 ,  스즈키유지 ,  다케가와요시유키 ,  바바도루 ,  고토고지 ,  미야지마히사카즈 ,  가타오카가즈시 ,  사이조다카시

    IPC: H01L21/60 ,  G01P9/04 ,  B81B3/00 ,  G01C19/56

    CPC classification number: G01P15/0802 ,  B81B7/0051 ,  B81B7/0064 ,  B81B2201/025 ,  B81C2203/038 ,  G01C19/5719 ,  G01P1/023 ,  G01P15/125 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided is a sensor device having a small sensor characteristic fluctuation and excellent electrical noise resistance characteristics. The sensor device is provided with a sensor unit, which includes a frame having an opening, a movable section movably held to the frame in the opening, and a detecting section for outputting an electric signal based on the positional dislocation of the movable section. The sensor device is also provided with a package substrate which is formed of a semiconductor material and bonded on the surface of the sensor unit. The package substrate has an electrical insulating film on the surface which faces the sensor unit, and the activation surface of the electric insulating film is directly bonded on the activation surface of the sensor unit at a room temperature. Thus, the package substrate is bonded on the sensor unit.

    Abstract translation: 提供具有小的传感器特性波动和优异的电气噪声特性的传感器装置。 传感器装置设置有传感器单元，其包括具有开口的框架，可移动地保持在开口中的框架的可移动部分，以及用于基于可移动部分的位置错位输出电信号的检测部分。 传感器装置还设置有由半导体材料形成并结合在传感器单元的表面上的封装基板。 封装基板在面向传感器单元的表面上具有电绝缘膜，并且电绝缘膜的激活表面在室温下直接接合在传感器单元的激活表面上。 因此，封装基板接合在传感器单元上​​。

    ＭＥＭＳ 구조물들에 질량을 추가하는 방법
    107.
    发明公开
    ＭＥＭＳ 구조물들에 질량을 추가하는 방법 无效
    将质量添加到MEMS结构的方法

    公开(公告)号：KR1020060015554A

    公开(公告)日：2006-02-17

    申请号：KR1020057020574

    申请日：2004-04-16

    Applicant: 엔엑스피 유에스에이, 인코포레이티드

    Inventor： 맥네일,앤드류,씨. ,  리,게리 ,  오브린,게리,제이.

    IPC: B81B7/02 ,  B32B9/00 ,  C23F1/00 ,  G01P3/00

    CPC classification number: B81B3/0078 ,  B81B2201/025 ,  G01P15/08 ,  G01P15/0802 ,  G01P15/0888 ,  G01P2015/0814 ,  Y10T428/24917

    Abstract: A proof mass (11) for a MEMS device is provided herein. The proof mass comprises a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to said base by way of a stem (21). The appendage (15) comprises a metal (17) or other such material that may be disposed on a semiconductor material (19). The metal increases the total mass of the proof mass (11) as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage (15) by way of a stem (21) prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.

    Abstract translation: 本文提供了用于MEMS器件的检测质量（11）。 检测质量块包括一个包括半导体材料的基底（13）和至少一个通过杆（21）与所述底座邻接的附属物（15）。 附件（15）包括可以设置在半导体材料（19）上的金属（17）或其他这样的材料。 与仅由半导体材料制成的类似尺寸的检验质量相比，金属与总体质量（11）相比增加，而不增加检测质量。 同时，通过杆（21）附接附件（15）可防止附件中产生的CTE差异的应力传输到基座，在那里它们可能导致温度误差。

    마이크로 관성센서 및 그 제조 방법
    108.
    发明公开
    마이크로 관성센서 및 그 제조 방법 无效
    MICRO INERTIA传感器及其制造方法

    公开(公告)号：KR1020030077754A

    公开(公告)日：2003-10-04

    申请号：KR1020020016603

    申请日：2002-03-27

    Applicant: 삼성전기주식회사

    Inventor： 안승도 ,  김경수 ,  조지만

    IPC: H01L29/84

    CPC classification number: B81C1/00301 ,  B81B2201/025 ,  B81B2207/095 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/038 ,  G01C19/5783 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10T428/24322

    Abstract: PURPOSE: A micro inertia sensor and a method for manufacturing the same are provided to be capable of reducing the size of the sensor and simplifying manufacturing processes by improving the structure of the sensor. CONSTITUTION: A micro inertia sensor is provided with a lower glass substrate(1), a lower silicon layer(2) including the first edge part(2a), the first fixing part(2b), a side motion detecting structure(2c), formed at the upper portion of the lower glass substrate, an upper silicon layer(4) includes the second edge part(4a), the second fixing part(4b), and an upper detecting electrode(4c) corresponding to the first edge part, the first fixing part, the side motion detecting structure, respectively, formed at the upper portion of the lower silicon layer, an adhesive layer(3) located between the lower and upper silicon layer, and an upper glass substrate(5) including a conductive line(6) and a via hole(5a), formed at the upper portion of the resultant structure.

    Abstract translation: 目的：提供微惯性传感器及其制造方法，以能够通过改进传感器的结构来减小传感​​器的尺寸并简化制造过程。 构造：微惯性传感器设置有下玻璃基板（1），包括第一边缘部分（2a），第一固定部分（2b），侧运动检测结构（2c）的下硅层（2） 形成在下玻璃基板的上部，上硅层（4）包括第二边缘部分（4a），第二固定部分（4b）和对应于第一边缘部分的上部检测电极（4c） 第一固定部分，分别形成在下硅层的上部的侧运动检测结构，位于下硅层和上硅层之间的粘合剂层（3）和包括导电的上玻璃基板（5） 线（6）和形成在所得结构的上部的通孔（5a）。

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