公开(公告)号：WO2009128048A1

公开(公告)日：2009-10-22

申请号：PCT/IB2009/051606

申请日：2009-04-17

Applicant: NXP B.V. ,  FURUKAWA, Yukiko ,  REIMANN, Klaus ,  RENDERS, Christina, Adriana ,  STEENEKEN, Peter, Gerard ,  VAN PIETERSON, Liesbeth ,  LIU, Jin ,  JEDEMA, Friso, Jacobus

Inventor： FURUKAWA, Yukiko ,  REIMANN, Klaus ,  RENDERS, Christina, Adriana ,  STEENEKEN, Peter, Gerard ,  VAN PIETERSON, Liesbeth ,  LIU, Jin ,  JEDEMA, Friso, Jacobus

IPC: H01G5/18 ,  H01L21/00 ,  H01H59/00 ,  B81C1/00

CPC classification number: H01G5/18 ,  B81B3/0072 ,  B81B2201/0221 ,  B81B2203/0118 ,  B81C2201/0167 ,  H01H1/0094

Abstract: The present invention relates to a MEMS, being developed for e.g. a mobile communication application, such as switch, tunable capacitor, tunable filter, phase shifter, multiplexer, voltage controlled oscillator, and tunable matching network. The volume change of phase-change layer is used for a bi-stable actuation of the MEMS device. The MEMS device comprises at least a bendable cantilever, a phase change layer, and electrodes. A process to implement this device and a method for using is given.

Abstract translation: 本发明涉及一种开发用于例如MEMS的MEMS。 移动通信应用，如开关，可调电容器，可调滤波器，移相器，多路复用器，压控振荡器和可调匹配网络。 相变层的体积变化用于MEMS器件的双稳态驱动。 MEMS器件至少包括可弯曲悬臂，相变层和电极。 给出了实现该设备的过程和使用方法。

公开(公告)号：WO2007046841A3

公开(公告)日：2007-12-21

申请号：PCT/US2006006569

申请日：2006-02-23

Applicant: SAINT GOBAIN CERAMICS ,  ZIN TECHNOLOGIES INC

Inventor： IZADNEGAHDAR ALAIN ,  NARENDAR YESHWANTH

IPC: B81C99/00 ,  C23C16/32

CPC classification number: B81C99/0085 ,  B81C2201/0167 ,  C23C16/01 ,  C23C16/325

Abstract: Methods of forming ceramic components are disclosed. One method calls for chemical vapor depositing a ceramic material over a substrate having first and second opposite surfaces to define a coated structure, the ceramic material forming a layer overlying both the first and second opposite surfaces. The layer and the substrate have a difference in thermal expansion coefficients of at least 0.5 ppm/K. The substrate is removed, leaving behind the layer. Ceramic components and coated structures are also disclosed.

Abstract translation: 公开了形成陶瓷部件的方法。 一种方法要求在具有第一和第二相对表面的衬底上化学气相沉积陶瓷材料以限定涂覆结构，陶瓷材料形成覆盖第一和第二相对表面的层。 该层和衬底在热膨胀系数方面具有至少0.5ppm / K的差异。 衬底被移除，留下层。 还公开了陶瓷部件和涂层结构。

公开(公告)号：WO2007053308A2

公开(公告)日：2007-05-10

申请号：PCT/US2006/040775

申请日：2006-10-19

Applicant: IDC, LLC ,  WANG, Hsin-Fu ,  TUNG, Ming-Hau ,  ZEE, Stephen

Inventor： WANG, Hsin-Fu ,  TUNG, Ming-Hau ,  ZEE, Stephen

IPC: G02B26/00 ,  B81B3/00 ,  H01L23/06

CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/047 ,  B81C1/00793 ,  B81C2201/0167

Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

Abstract translation: 这里描述的是在MEMS器件中在金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属的混合，这可以改变期望的物理特性并使加工变得复杂。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。

公开(公告)号：WO2007046841A2

公开(公告)日：2007-04-26

申请号：PCT/US2006/006569

申请日：2006-02-23

Applicant: SAINT-GOBAIN CERAMICS & PLASTICS, INC. ,  ZIN TECHNOLOGIES, INC.

Inventor： IZADNEGAHDAR, Alain ,  NARENDAR, Yeshwanth

IPC: B81C1/00

CPC classification number: B81C99/0085 ,  B81C2201/0167 ,  C23C16/01 ,  C23C16/325

Abstract: Methods of forming ceramic components are disclosed. One method calls for chemical vapor depositing a ceramic material over a substrate having first and second opposite surfaces to define a coated structure, the ceramic material forming a layer overlying both the first and second opposite surfaces. The layer and the substrate have a difference in thermal expansion coefficients of at least 0.5 ppm/K. The substrate is removed, leaving behind the layer. Ceramic components and coated structures are also disclosed.

Abstract translation: 公开了形成陶瓷部件的方法。 一种方法要求在具有第一和第二相对表面的衬底上化学气相沉积陶瓷材料以限定涂覆结构，陶瓷材料形成覆盖第一和第二相对表面的层。 该层和基底的热膨胀系数差异至少为0.5ppm / K。 去除衬底，留下该层。 还公开了陶瓷组分和涂层结构。

公开(公告)号：WO2007022528A1

公开(公告)日：2007-02-22

申请号：PCT/US2006/032691

申请日：2006-08-17

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  KOGUT, Lior ,  QUI, Chengbin ,  WANG, Chun-Ming ,  ZEE, Stephen ,  ZHONG, Fan

Inventor： KOGUT, Lior ,  QUI, Chengbin ,  WANG, Chun-Ming ,  ZEE, Stephen ,  ZHONG, Fan

IPC: B81B3/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

Abstract translation: MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。

公开(公告)号：WO2007022479A1

公开(公告)日：2007-02-22

申请号：PCT/US2006/032516

申请日：2006-08-17

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  QUI, Chengbin ,  SASAGAWA, Teruo ,  TUNG, Ming-Hau ,  WANG, Chun-Ming ,  ZEE, Stephen

Inventor： QUI, Chengbin ,  SASAGAWA, Teruo ,  TUNG, Ming-Hau ,  WANG, Chun-Ming ,  ZEE, Stephen

IPC: B81C1/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：WO2007022476A1

公开(公告)日：2007-02-22

申请号：PCT/US2006/032511

申请日：2006-08-17

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC. ,  KOGUT, Lior ,  ZHONG, Fan

Inventor： KOGUT, Lior ,  ZHONG, Fan

IPC: B81B3/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

Abstract translation: MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

公开(公告)号：WO0228766A2

公开(公告)日：2002-04-11

申请号：PCT/US0129996

申请日：2001-09-24

Applicant: HONEYWELL INT INC

Inventor： DWYER PAUL

IPC: B81B3/00 ,  B81C1/00 ,  B81C99/00 ,  B81C5/00

CPC classification number: B81C99/0035 ,  B81C1/00666 ,  B81C99/0065 ,  B81C2201/0167

Abstract: A method for delicately adjusting an orientation of features in completed micro-machined electromechanical sensor (MEMS) devices after initial formation and installation within the device packaging to trim one or more performance parameters of interest, including modulation, bias and other dynamic behaviors of the MEMS devices.

Abstract translation: 一种在初始形成和安装在器件封装中之后精细调整完成的微加工机电传感器（MEMS）器件中的特征取向的方法，以修剪一个或多个感兴趣的性能参数，包括MEMS的调制，偏置和其他动态行为 设备。

公开(公告)号：EP2707953A4

公开(公告)日：2014-12-03

申请号：EP12786090

申请日：2012-05-11

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT

Inventor： PRUNNILA MIKA ,  JAAKKOLA ANTTI ,  PENSALA TUOMAS

IPC: H03H9/02 ,  B81B3/00 ,  H03H9/24

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

公开(公告)号：EP2530509A1

公开(公告)日：2012-12-05

申请号：EP12170724.4

申请日：2012-06-04

Applicant: Hitachi Displays, Ltd.

Inventor： Nitta, Hidekazu ,  Ohkura, Makoto ,  Kaitoh, Takuo ,  Matsumoto, Katsumi

IPC: G02B26/08 ,  B81B3/00 ,  G09G3/34 ,  B81C1/00

CPC classification number: G02B26/085 ,  B81B3/0072 ,  B81B2201/045 ,  B81C2201/0167

Abstract: In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.

Abstract translation: 在可移动的快门系统显示装置中，可移动快门包括具有低残余应力并因此是稳定的非晶硅膜材料。 显示装置包括显示面板，其包括第一基板和第二基板。 显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜 堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。