Abstract:
PURPOSE: A deflector and a method are provided to achieve improved accuracy of alignment of deflection plates and structural stability by directly forming deflection plates, wire and pad on the substrate. CONSTITUTION: A deflector comprises an isolating substrate(11) having a hole formed at the center of the isolating substrate; a plurality of deflection plates arranged on the top and bottom of the isolating substrate along the circumference of the hole; a plurality of pads arranged along the edges of the top and bottom of the isolating substrate; and a plurality of wires for connecting the deflecting plates and the pads. The deflecting plates, wire, and the pad are integrally formed into a single unit. A method for manufacturing a deflector comprises a step of forming a hole at the center of a substrate, filling the hole with a polymer(13), and solidifying the resultant structure; a step of forming seed metal layers(14a,14b) on both sides of the substrate, and forming a first mask pattern in such a manner that the seed metal layer of the portion where a deflecting plate, wire and a pad are to be formed is exposed; a step of forming a first metal layer(16a) on the seed metal layer of the exposed portion; a step of forming second mask patterns on both sides of the substrate in such a manner that the first metal layer of the portion where the deflection plate is to be formed is exposed; a step of forming a second metal layer(16b) on the first metal layer of the exposed portion; a step of removing the second and first mask patterns; and a step of removing the seed metal layer of the exposed portion and the polymer from the hole.
Abstract:
PROBLEM TO BE SOLVED: To achieve a stable irradiation of a beam without using a complicated adjusting mechanism. SOLUTION: A focused ion beam device includes: a needle-like chip 1; a gas-supplying part including a gas nozzle 2 for an ion source and a gas supply source 3 for the ion source to supply gas to the chip 1; an extraction electrode 4 applying voltage with the chip 1 and extracting ions by ionizing the gas adsorbed onto a surface of the chip 1; an ion gun part 19 including a cathode electrode 5 accelerating ions toward a sample 13; a gun alignment electrode 9 located closer to the sample 13 than the ion gun part 19 and adjusting an irradiation direction of an ion beam 11 emitted from the ion gun part 19; and a lens system including a focusing lens electrode 6 focusing the ion beam 11 on the sample 13 and an objective lens electrode 8. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
The objective is to obtain a particle beam irradiation apparatus that can perform in a changeable manner the combination of a plurality of parameters in particle beam irradiation, such as the combination of irradiation fields and irradiation position accuracies, and that can perform diverse-variation irradiation. The particle beam irradiation apparatus (58) irradiates a charged particle beam (3) accelerated by a accelerator (54) onto an irradiation subject (11); the particle beam irradiation apparatus (58) includes a scanning electromagnet (1, 2) that scans the charged particle beam (3), and a scanning electromagnet moving apparatus (4) that moves the scanning electromagnet (1, 2) in such a way as to change the distance between the scanning electromagnet (1, 2) and the irradiation subject (11) in the beam axis direction of the charged particle beam (3).
Abstract:
PROBLEM TO BE SOLVED: To provide a method of optimizing a cathode temperature of an electron gun in a short time when regulating an emission current in order to obtain a desired current density.SOLUTION: An operation temperature adjustment method of a cathode includes the steps of: acquiring an approximation formula approximating a correlation between an emission current value and an operation temperature of the cathode; measuring a current density of an electron beam emitted from the cathode in the state where an n-th emission current value and an n-th operation temperature of the cathode are set to an electron beam source; determining whether the measured current density is within an allowable range; changing the set n-th emission current value into an (n+1)th emission current value in the case where the current density is not within the allowable range; and using the approximation formula to compute an operation temperature of the cathode corresponding to the (n+1)th emission current value and setting the computed operation temperature to the electron beam source as an (n+1)th operation temperature of the cathode.
Abstract:
PROBLEM TO BE SOLVED: To provide a technique advantageous to achieve high throughput with a reduced buffer memory capacity in a charged particle beam lithography apparatus.SOLUTION: A charged particle beam lithography apparatus includes a deflector for deflecting a charged particle beam and a stage mechanism for driving a substrate. The deflector scans the charged particle beam in a main scanning direction, and the stage mechanism scans the substrate in a sub-scanning direction, so that a pattern is drawn on the substrate. The charged particle beam lithography apparatus further includes: a blanker unit for controlling irradiating or not irradiating the substrate with the charged particle beam; and a control unit for controlling, when the drawing on the substrate is resumed after suspended in a state the stage mechanism drives the substrate in the sub-scanning direction, the deflector to deflect the charged particle beam in the sub-scanning direction, by the drive amount of the substrate by the stage mechanism in the sub-scanning direction during a period from the suspension to the resumption of the drawing.
Abstract:
PROBLEM TO BE SOLVED: To provide a device which is simple in design and easy in connection of respective elements in the device for transferring energy of ions to at least one gas particle and/or the device for transporting ions. SOLUTION: In the energy transfer and/or ion transportation devices 1200, 1300 for transferring energy of at least one ion to at least one gas particle in a gas, a container 1201 internally containing a gas is prepared, and the container 1201 has a transportation axis. Furthermore, at least one first multipole unit and at least one second multipole unit are arranged, and the first multipole unit and the second multipole unit are arranged along the transportation axis. The first multipole unit and the second multipole unit are formed by a printed circuit board. Furthermore, an electronic circuit is arranged to generate a potential gradient by applying potential to each multipole unit, and especially, the potential gradient is generated along the transportation axis. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
A positioning apparatus is provided for an electron beam of an electron tube, the apparatus including a first DC voltage circuit having a high potential difference and a second DC voltage circuit having a smaller potential difference, having in each case a first potential level and a second potential level, and a deflection module, which has two inputs and at least one deflection coil, wherein the at least one deflection coil is connected between the two inputs of the deflection module.