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公开(公告)号：EP2556015B1
公开(公告)日：2016-08-10
申请号：EP11766241.1
申请日：2011-04-05
Applicant: Niklaus, Frank , Fischer, Andreas
Inventor： Niklaus, Frank , Fischer, Andreas
CPC classification number: B81C1/00373 , B33Y10/00 , B33Y70/00 , B81C2201/0143 , B81C2201/0188 , B82Y20/00
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公开(公告)号：EP3038125A1
公开(公告)日：2016-06-29
申请号：EP14307127.2
申请日：2014-12-22
Applicant: DelfMEMS SAS
Inventor： Robin, Renaud , Lorphelin, Nicolas , Segueni, Karim
IPC: H01H59/00
CPC classification number: H01H59/0009 , B81B3/0086 , B81B2201/018 , B81B2203/0127 , B81C1/00158 , B81C2201/0188 , H01H49/00 , H01H2059/0027 , H01H2059/0036 , H01H2227/004
Abstract: The present invention relates to a method of manufacturing an MEMS device, in particular, an MEMS switch, comprising the steps of forming posts and a conduction (transmission) line over a substrate and forming a membrane over the posts and the conduction line comprising forming a first membrane layer and a second membrane layer over the first membrane layer in a region over one of the posts and/or a region over the conduction line such that the first membrane layer has a region where the second membrane layer is not formed adjacent to the region where the second membrane layer is formed. Moreover, it is provided an MEMS device, in particular, an MEMS switch, comprising posts and a conduction (transmission) line formed over a substrate and a membrane over the posts and the conduction line. The membrane comprises a first membrane layer and a second membrane layer formed over the first membrane layer in a region over one of the posts and/or a region over the conduction line such that the first membrane layer has a region where the second membrane layer is not formed adjacent to the region where the second membrane layer is formed.
Abstract translation: 本发明涉及一种制造MEMS器件，特别是MEMS开关的方法，包括以下步骤：在衬底上形成柱和导电（透射）线，并在柱上形成膜，导线包括形成 第一膜层和第二膜层之上的第一膜层和第二膜层上的第一膜层和第二膜层之间的区域，使得第一膜层具有不与第二膜层相邻的区域 形成第二膜层的区域。 此外，它提供了一种MEMS器件，特别是MEMS开关，其包括柱和形成在衬底上的导电（透射）线和在柱和导电线上的膜。 所述膜包括第一膜层和第二膜层，所述第一膜层和所述第二膜层形成在所述第一膜上方的区域中，并且在所述导电线上方的区域和/或所述导电线上的区域中形成在所述第一膜层上，使得所述第一膜层具有第二膜层 不与形成有第二膜层的区域相邻地形成。
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113.发明公开FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES 有权FREIFORMBESTÜCKUNGVON SILISIUM-MIKRO- UND NANOSTRUKTUREN
公开(公告)号：EP2556015A4
公开(公告)日：2014-10-01
申请号：EP11766241
申请日：2011-04-05
Applicant: NIKLAUS FRANK , FISCHER ANDREAS
Inventor： NIKLAUS FRANK , FISCHER ANDREAS
CPC classification number: B81C1/00373 , B33Y10/00 , B33Y70/00 , B81C2201/0143 , B81C2201/0188 , B82Y20/00
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114.发明公开TRANSFER SUBSTRATE FOR FORMING METAL WIRING AND METHOD FOR FORMING METAL WIRING USING SAID TRANSFER SUBSTRATE 审中-公开传输衬底形成用于形成金属布线与本转移基质金属布线和方法
公开(公告)号：EP2645409A1
公开(公告)日：2013-10-02
申请号：EP11843493.5
申请日：2011-11-18
Applicant: Tanaka Kikinzoku Kogyo K.K.
Inventor： OGASHIWA, Toshinori , KURITA, Masaaki , NISHIMORI, Takashi , KANEHIRA, Yukio
IPC: H01L21/60
CPC classification number: H01L21/4885 , B22F7/08 , B23K1/0016 , B23K35/0244 , B23K35/3006 , B23K35/3013 , B23K35/322 , B23K2101/40 , B81C1/00095 , B81C1/00373 , B81C2201/0188 , B81C2201/0194 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/94 , H01L2224/03003 , H01L2224/031 , H01L2224/0312 , H01L2224/03334 , H01L2224/0401 , H01L2224/0508 , H01L2224/05082 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05166 , H01L2224/05169 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/05671 , H01L2224/05673 , H01L2224/05676 , H01L2224/05678 , H01L2224/05681 , H01L2224/05684 , H01L2224/11003 , H01L2224/111 , H01L2224/1112 , H01L2224/11334 , H01L2224/13082 , H01L2224/13083 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13181 , H01L2224/13184 , H01L2224/94 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/1461 , H01L2924/15788 , H01L2224/05644 , H01L2924/00014 , H01L2924/01046 , H01L2924/00012 , H01L2924/00 , H01L2224/11
Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.
Abstract translation: 本发明提供了一转印衬底转移环的金属布线材料到转印接收对象，包括：基板上的转印用基板中，至少一个金属布线的材料形成的基材和对底层金属膜形成的基板和金属布线之间 材料，worin金属布线材料是通过烧结制备的模制品，例如，具有按重量计以上且上的0点01微米至1.0微米的平均粒径和底层金属电影的纯度99.9％的金粉末是由金属的 ：诸如金或合金制成。 转印基板能够传递环的金属布线材料到转印接收对象的甚至在温度为80转印接收对象加热至300℃
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公开(公告)号：EP1634125A2
公开(公告)日：2006-03-15
申请号：EP04739268.3
申请日：2004-05-19
Applicant: Singleton, Laurence
Inventor： SINGLETON, Laurence , SCHEURER, Jörg
CPC classification number: G03F7/40 , B81B2203/0361 , B81C1/00619 , B81C2201/0159 , B81C2201/0181 , B81C2201/0188 , G03F7/0035 , G03F7/038 , G03F7/11 , G03F7/405
Abstract: The invention relates to a lithographic method for producing microcomponents having a submillimeter structure, whereby the resist material can be dissolved in a simple manner. According to the invention, a structurable adhesive layer is applied to a metallic starting layer, a layer consisting of photostructurable epoxy resin is applied to the adhesive layer, and the epoxy resin is structured by means of selective illumination and dissolution of the unexposed regions in order to create supporting structures and free spaces between the supporting structures. Only the free spaces provided for the microcomponent and located between the epoxy resin supporting structures are then filled with metal according to a galvanic method, and the epoxy resin is removed, the remaining free spaces being filled with etching agents.
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Patent Agency Ranking
公开(公告)号：KR101380002B1
公开(公告)日：2014-04-02
申请号：KR1020137013880
申请日：2011-11-18
Applicant: 다나카 기킨조쿠 고교 가부시키가이샤
CPC classification number: H01L21/4885 , B22F7/08 , B23K1/0016 , B23K35/0244 , B23K35/3006 , B23K35/3013 , B23K35/322 , B23K2201/40 , B81C1/00095 , B81C1/00373 , B81C2201/0188 , B81C2201/0194 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/94 , H01L2224/03003 , H01L2224/031 , H01L2224/0312 , H01L2224/03334 , H01L2224/0401 , H01L2224/0508 , H01L2224/05082 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05166 , H01L2224/05169 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/05671 , H01L2224/05673 , H01L2224/05676 , H01L2224/05678 , H01L2224/05681 , H01L2224/05684 , H01L2224/11003 , H01L2224/111 , H01L2224/1112 , H01L2224/11334 , H01L2224/13082 , H01L2224/13083 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13181 , H01L2224/13184 , H01L2224/94 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/1461 , H01L2924/15788 , H01L2224/05644 , H01L2924/00014 , H01L2924/01046 , H01L2924/00012 , H01L2924/00 , H01L2224/11
Abstract: 본 발명은 기판과, 상기 기판 상에 형성된 하나 이상의 금속 배선 소재와, 상기 기판과 상기 금속 배선 소재 사이에 형성된 하지 금속막(underlying metal film)으로 이루어지며, 상기 금속 배선 소재를 피전사물에 전사시키기 위한 전사용 기판으로서, 상기 금속 배선 소재는, 순도 99.9 중량% 이상, 평균 입자경 0.01 ㎛~1.0 ㎛인 금 분말 등을 소결하여 이루어지는 성형체이며, 상기 하지 금속막은, 금 등의 금속 또는 합금 등으로 이루어지는 전사용 기판이다. 이 전사용 기판은, 피전사물의 가열온도를 80~300℃로 하더라도 금속 배선 소재를 피전사물에 전사할 수 있다.
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公开(公告)号：KR1020130086055A
公开(公告)日：2013-07-30
申请号：KR1020137013880
申请日：2011-11-18
Applicant: 다나카 기킨조쿠 고교 가부시키가이샤
CPC classification number: H01L21/4885 , B22F7/08 , B23K1/0016 , B23K35/0244 , B23K35/3006 , B23K35/3013 , B23K35/322 , B23K2201/40 , B81C1/00095 , B81C1/00373 , B81C2201/0188 , B81C2201/0194 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/94 , H01L2224/03003 , H01L2224/031 , H01L2224/0312 , H01L2224/03334 , H01L2224/0401 , H01L2224/0508 , H01L2224/05082 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05166 , H01L2224/05169 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/0567 , H01L2224/05671 , H01L2224/05673 , H01L2224/05676 , H01L2224/05678 , H01L2224/05681 , H01L2224/05684 , H01L2224/11003 , H01L2224/111 , H01L2224/1112 , H01L2224/11334 , H01L2224/13082 , H01L2224/13083 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/1317 , H01L2224/13171 , H01L2224/13173 , H01L2224/13176 , H01L2224/13178 , H01L2224/13181 , H01L2224/13184 , H01L2224/94 , H01L2924/01006 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/1461 , H01L2924/15788 , H01L2224/05644 , H01L2924/00014 , H01L2924/01046 , H01L2924/00012 , H01L2924/00 , H01L2224/11
Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.
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公开(公告)号：KR101450749B1
公开(公告)日：2014-10-17
申请号：KR1020130129551
申请日：2013-10-29
Applicant: 서강대학교산학협력단
CPC classification number: B81C1/0015 , B29C35/0805 , B29C64/135 , B29C2035/0827 , B29K2071/02 , B29K2105/0061 , B29K2995/0027 , B29L2031/756 , B33Y10/00 , B33Y30/00 , B33Y80/00 , B81B3/0021 , B81B2201/12 , B81B2203/0118 , B81C99/0025 , B81C2201/0188 , B81C2201/034 , B81C2203/038 , G01D11/30 , G01Q70/14 , G01Q70/16
Abstract: The present invention can comprises: a step for forming the cantilever synthetic resin of liquid phase for micro-cantilever on the top surface of a base block having a joining base and a non-joining base correspondingly to the thickness of the micro-cantilever; and a step for curing the cantilever synthetic resin of liquid phase so as to pass the boundary of the joining base and the non-joining base, wherein the joining base has adhesive properties relatively stronger than the non-joining base with respect to the cured cantilever synthetic resin.
Abstract translation: 本发明可以包括：在具有与微悬臂梁的厚度相对应的接合基座和非接合基座的基座的顶面上形成用于微悬臂的液相的悬臂合成树脂的步骤; 以及使液相的悬臂合成树脂固化以通过接合基体和非接合基体的边界的步骤，其中接合基底相对于固化的悬臂具有比非接合基底相对更强的粘合性能 合成树脂。
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公开(公告)号：KR1020110098829A
公开(公告)日：2011-09-01
申请号：KR1020117016696
申请日：2010-02-04
Applicant: 가부시키가이샤 아이에이치아이
CPC classification number: C23C14/0605 , B81C1/00031 , B81C2201/0188 , C23C14/04 , C23C14/14 , C23C14/22 , C23C14/24
Abstract: 압전체(11)의 표면에 간격을 두고 위치하는 적어도 한 쌍의 전극(12, 13)을 갖는 표면 탄성파 소자(10)와, 표면 탄성파 소자의 표면에 2 이상의 물질(A, B)을 진공 증착 가능한 진공 증착 장치(20)와, 표면 탄성파 소자의 전극간에 고주파 전압을 인가하는 고주파 인가 장치(30)를 구비하고, 상기 고주파 전압의 인가에 의해 표면 탄성파 소자의 표면에 표면 탄성파의 정재파를 발생시킨 상태에서 복수의 박막층을 구성하고, 정재파의 특정 위치에 미세 구조물을 증착한다.
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公开(公告)号：JP2018520521A
公开(公告)日：2018-07-26
申请号：JP2018501849
申请日：2016-07-07
Applicant: 日本テキサス・インスツルメンツ株式会社 , テキサス インスツルメンツ インコーポレイテッド
CPC classification number: B81C1/00873 , B81B7/007 , B81B2201/0214 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292 , B81B2201/047 , B81B2207/07 , B81B2207/098 , B81C1/00333 , B81C2201/0125 , B81C2201/0132 , B81C2201/0159 , B81C2201/0181 , B81C2201/0188 , B81C2203/0136 , H01L21/561 , H01L21/568 , H01L21/6836 , H01L23/3121 , H01L24/19 , H01L2221/68359 , H01L2224/04105 , H01L2224/96 , H01L2924/3511
Abstract: パネルフォーマットのオープンキャビティ(110a)を備えるパッケージされた半導体デバイスを製造する方法の記載する例において、この方法は、平坦なパッド(230)及び対称的に置かれる垂直ピラー(231)を有する金属性ピースのパネルサイズのグリッドを接着性キャリアテープ上に置くこと、センサシステムを下向きに半導体チップ(101)をテープ上に取り付けること、チップとグリッドの間のギャップを充填するため低CTE絶縁性材料をラミネート及び薄化すること、テープを取り除くためアッセンブリを反転させること、アッセンブリフロント側をプラズマ洗浄し、アッセンブリにわたって均一な金属層をスパッタリング及びパターニングし、及び任意選択でアッセンブリのための再配線トレース及び拡張コンタクトパッドを形成するため金属層をめっきすること、パネル全体に絶縁性スティフナーをラミネートすること(212)、センサシステムにアクセスするためスティフナーにキャビティを開けること(213)、及び金属性ピースを切ることによりパッケージングされたデバイスをシンギュレートすること(214)を含む。
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