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    Optics for generation of high current density patterned charged particle beams
    111.
    发明授权
    Optics for generation of high current density patterned charged particle beams 失效
    用于产生高电流密度图案化带电粒子束的光学

    公开(公告)号：US07462848B2

    公开(公告)日：2008-12-09

    申请号：US10962049

    申请日：2004-10-07

    Applicant: N. William Parker

    Inventor： N. William Parker

    IPC: H01J1/50

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/043 ,  H01J2237/1534

    Abstract: A direct-write electron beam lithography system employing a patterned beam-defining aperture to enable the generation of high current-density shaped beams without the need for multiple beam-shaping apertures, lenses and deflectors is disclosed. Beam blanking is accomplished without the need for an intermediate crossover between the electron source and the wafer being patterned by means of a double-deflection blanker, which also facilitates proximity effect correction. A simple type of “moving lens” is utilized to eliminate off-axis aberrations in the shaped beam. A method for designing the patterned beam-defining aperture is also disclosed.

    Abstract translation: 公开了一种使用图案化的光束限定孔径以便能够产生高电流密度成形光束而不需要多个光束成形孔，透镜和偏转器的直写式电子束光刻系统。 实现光束消隐，而不需要通过双偏转消隐器对电子源和晶片进行图案化之间的中间交叉，这也有助于邻近效应校正。 使用简单类型的“移动透镜”来消除成形光束中的离轴像差。 还公开了一种用于设计图案化光束限定孔的方法。

    Method of inspecting pattern and inspecting instrument
    115.
    发明授权
    Method of inspecting pattern and inspecting instrument 有权
    检查模式和检验仪器的方法

    公开(公告)号：US06586952B2

    公开(公告)日：2003-07-01

    申请号：US09881000

    申请日：2001-06-15

    Applicant: Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

    Inventor： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

    IPC: G01R31305

    CPC classification number: H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

    Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

    Abstract translation: 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片，并且监视在向后偏置中减轻电荷的时间段的特性差。 结果，在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻，因此在正常部分和失效部分之间产生电位差，并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作，实时执行图像处理并存储失败部分的位置和亮度，可以执行指定区域的自动检查。 故障部分的图像，亮度和分布信息在检查后自动保存并输出。

    Electron beam lithographic method
    116.
    发明授权
    Electron beam lithographic method 失效
    电子束光刻法

    公开(公告)号：US4777369A

    公开(公告)日：1988-10-11

    申请号：US900423

    申请日：1986-08-26

    Applicant: Kazumitsu Nakamura ,  Hiroyuki Ito

    Inventor： Kazumitsu Nakamura ,  Hiroyuki Ito

    IPC: H01L21/30 ,  H01J37/30 ,  H01J37/317 ,  H01L21/027 ,  G01K1/08 ,  H01J3/14

    CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J2237/043 ,  H01J2237/31776

    Abstract: An electron beam lithographic method for describing a fine pattern on the surface of a semiconductor specimen by irradiating the surface of the specimen with an electron beam.The electron beam generated by an electron gun is converged onto a specimen through electron lenses. When a step of lithography has been finished, the electron beam is blanked by a shaping deflector that shapes the electron beam and that is disposed between a first shaping iris and a second shaping iris, so that the specimen is not damaged by the reflected electron beam or by the scattered electrons.

    Abstract translation: 一种用于通过用电子束照射样本的表面来描述半导体样品表面上的精细图案的电子束光刻方法。 由电子枪产生的电子束通过电子透镜会聚到样品上。 当光刻步骤已经完成时，电子束被成形偏转器消隐，成形偏转器使电子束成形，并且设置在第一成形虹膜和第二成形虹膜之间，使得样品不被反射的电子束损坏 或通过散射的电子。

    High speed pattern generator for electron beam lithography
    117.
    发明授权
    High speed pattern generator for electron beam lithography 失效
    用于电子束光刻的高速图案发生器

    公开(公告)号：US4698509A

    公开(公告)日：1987-10-06

    申请号：US701711

    申请日：1985-02-14

    Applicant: William D. Wells ,  David M. Robinson ,  Richard M. DeLuca ,  Eric D. Burwen

    Inventor： William D. Wells ,  David M. Robinson ,  Richard M. DeLuca ,  Eric D. Burwen

    IPC: H01J37/302 ,  H01J37/317 ,  G21K5/04

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/31776

    Abstract: A pattern generator for supplying beam deflection and blanking signals in an electron beam lithography system which writes polygon pattern features by sweeping a beam of rectangular cross-section over each polygon and simultaneously varying the length of the rectangular cross-section. The pattern generator converts polygon size and shape data to an upper shape signal and a lower shape signal. The shaping signals are subtracted to provide a beam length signal. The lower shape signal controls the beam position during writing of the polygon. The pattern generator further includes a ramp generator for sweeping the beam over the polygon. The ramp signal and shaping signals are synchronized by detecting the points in the sweep at which polygon turn points occur. The shape signal generators utilize interleaved operation for high speed. A blanking circuit provides uniform exposure of pattern features by controlling the width of the rectangular beam. The beam is ramped on and off at a rate which matches the rate of the sweep signal.

    Abstract translation: 一种用于在电子束光刻系统中提供光束偏转和消隐信号的图案发生器，其通过在每个多边形上扫过矩形横截面的波束并同时改变矩形横截面的长度来写入多边形图案特征。 图案生成器将多边形大小和形状数据转换为上形状信号和下形状信号。 减去整形信号以提供光束长度信号。 下形状信号控制多边形写入期间的光束位置。 图案发生器还包括用于在多边形上扫描光束的斜坡发生器。 斜坡信号和整形信号通过检测在哪个多边形转向点发生的扫描中的点进行同步。 形状信号发生器利用高速的交错操作。 消隐电路通过控制矩形光束的宽度来提供图案特征的均匀曝光。 光束以与扫描信号的速率相匹配的速率开启和关闭。

    All electrostatic electron optical sub-system for variable electron beam spot shaping and method of operation
    118.
    发明授权
    All electrostatic electron optical sub-system for variable electron beam spot shaping and method of operation 失效
    所有静电电子子系统用于可变电子束点成形和操作方法

    公开(公告)号：US4683366A

    公开(公告)日：1987-07-28

    申请号：US749789

    申请日：1985-06-28

    Applicant: Kenneth J. Harte ,  Guenther O. Langner

    Inventor： Kenneth J. Harte ,  Guenther O. Langner

    IPC: H01J37/30 ,  H01J37/317 ,  B23K15/00

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/1207 ,  H01J2237/151 ,  H01J2237/31776

    Abstract: An all-electrostatic variable spot charged particle (electron) beam shaping sub-system which is compact and of much smaller size than known similar systems designed for the same purpose and operating with magnetic lenses. The improved electrostatic variable spot-shaping sub-system does not require mechanical rotation of the spot-shaping apertures for maintaining alignment or orientation. The improved sub-system includes both beam steering and beam blanking requiring less than 3 volts for operation of the blanking controls to turn the beam on and off. The novel system easily accomodates a variety of different beam-shaping apertures for use as the second beam shaping aperture in the sub-system including rectilinear triangles of different orientation to provide smooth 45 degree pattern delineation, rectangles, squares, and even different diameter circles where such configurations are required by a particular pattern to be written in the target plane.

    Abstract translation: 全静电可变点带电粒子（电子）束整形子系统，紧凑且尺寸小于为同一目的而设计并与磁性镜头一起操作的已知类似系统。 改进的静电可变光斑整形子系统不需要用于保持对准或取向的光点成形孔的机械旋转。 改进的子系统包括波束转向和波束消隐，其需要小于3伏特用于操作消隐控制以使光束打开和关闭。 该新颖系统容易地容纳各种不同的光束成形孔，用作子系统中的第二光束整形孔，包括不同取向的直线三角形，以提供平滑的45度图案描绘，矩形，正方形以及甚至不同直径的圆，其中 通过将特定图案写入目标平面来要求这样的配置。

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