公开(公告)号：JP2004300230A

公开(公告)日：2004-10-28

申请号：JP2003093456

申请日：2003-03-31

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： CHIBA TAKASHI ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C07F7/18 ,  C08G77/24 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new polysiloxane which has fluorine-containing norbornane skeletons, is useful as a resin component for resists having high transparency for radiations having wavelengths of ≤200 nm and having excellent resolutions, and the like, to provide a new silicon-containing compound useful as a raw material for synthesizing the polysiloxane and the like, and to provide a radiation-sensitive resin composition containing the polysiloxane. SOLUTION: This silicon-containing compound is represented by the general formula (1) [X is H, OH, a halogen, a monovalent group such as a (halogenated) hydrocarbon group; R 1 is a monovalent (halogenated) hydrocarbon group; (a) is an integer of 0 to 3; B is H or F; (m) is an integer of 1 to 10; (n) is 0 or 1]. The polysiloxane has structural units originated from the silicon-containing compound. The radiation-sensitive resin composition is characterized by comprising the polysiloxane and a radiation-sensitive acid-generating agent. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004191386A

公开(公告)日：2004-07-08

申请号：JP2002325402

申请日：2002-11-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  KONNO KEIJI ,  KOBAYASHI YASUTAKA ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08L83/02 ,  C08L83/04 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film excellent in storage stability for obtaining a resist underlayer film which ensures no resist peeling, improves pattern reproducibility, and has alkali resistance and resistance to oxygen ashing in resist removal when disposed under a resist. SOLUTION: The composition for a resist underlayer film comprises (A) a hydrolysis-condensation product of an alkoxysilane mixture including a compound represented by the formula (1): Si(OR 2 ) 4 and a compound represented by the formula (2): R 1 n Si(OR 2 ) 4-n and (B) a hydrolysis-condensation product of at least a compound represented by the above formula (2). In the formula (1), symbols R 2 may be the same or different and each represents a monovalent organic group. In the formula (2), symbols R 1 may be the same or different and each represents a monovalent organic group or H; symbols R 2 may be the same or different and each represents a monovalent organic group; and n is an integer of 1-2. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004151267A

公开(公告)日：2004-05-27

申请号：JP2002315016

申请日：2002-10-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： CHIBA TAKASHI ,  SHIMOKAWA TSUTOMU ,  HAYASHI AKIHIRO

IPC: G03F7/11 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method which can form dense patterns without receiving the influence of standing waves and can form the patterns having a high aspect ratio in a dry etching step by combining lower layer films usable as thin films having excellent dry etching resistance and a resist film containing a fluorine-containing polymer having high transparency at a wavelength ≤193 nm and multilayered films for forming the patterns. SOLUTION: The pattern forming method has a step of successively forming (1) the first lower layer film containing a polymer of a carbon content ≥80wt%, (2) the second lower layer film containing a siloxane component, and (3) the resist film containing a polymer of a carbon content ≥30wt% which is made easily soluble in an alkali by the effect of an acid, and a radiation sensitive acid generating agent, exposing the resist film with radiation, and developing the exposed resist film. The multilayered films for pattern formation has the first lower layer film, the second lower layer film and the resist film. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种图案形成方法，其可以形成致密图案而不受到驻波的影响，并且可以通过组合可用作薄膜的下层膜来形成干蚀刻步骤中具有高纵横比的图案 具有优异的耐干蚀刻性和含有在波长≤193nm具有高透明度的含氟聚合物的抗蚀剂膜和用于形成图案的多层膜。 图案形成方法具有以下步骤：（1）含有碳含量≥80重量％的聚合物的第一下层膜，（2）含有硅氧烷成分的第二下层膜和（3） ）抗蚀剂膜，其含有通过酸作用容易溶于碱的含量≥30重量％的聚合物，和辐射敏感性酸产生剂，用抗辐射剂曝光抗蚀剂膜，以及显影曝光的抗蚀剂膜 。 用于图案形成的多层膜具有第一下层膜，第二下层膜和抗蚀剂膜。 版权所有（C）2004，JPO

公开(公告)号：JP2004107277A

公开(公告)日：2004-04-08

申请号：JP2002273899

申请日：2002-09-19

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： CHIBA TAKASHI ,  SHIMOKAWA TSUTOMU ,  HAYASHI AKIHIRO

IPC: G03F7/039 ,  C07C43/192 ,  C07C43/196 ,  C07F7/12 ,  C07F7/18 ,  C08G77/14 ,  C08G77/24 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new polysiloxane having a fluoronorbornane skeleton, useful as a resin component or the like of resists high in transparency to radiation ≤200 nm in wavelength, high in resolution and easy to control the solubility to alkaline developing solution, to provide a new silicon-containing compound and a new norbornene-based compound useful as raw materials or intermediates or the like for the polysiloxane, and to provide a radiation-sensitive resin composition containing the polysiloxane. SOLUTION: The norbornene-based compound is represented by 5-heptafluoropropoxy-5,6,6-trifluorobicyclo[2.2.1]hept-2-ene or the like. The silicon-containing compound is represented by 5-heptafluoropropoxy-5,6,6-trifluorobicyclo[2.2.1]heptyltriethoxysilane or the like. The polysiloxane has a structural unit derived from the silicon-containing compound. The radiation-sensitive resin composition comprises the polysiloxane and a radiation-sensitive acid generator. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003295440A

公开(公告)日：2003-10-15

申请号：JP2002093942

申请日：2002-03-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  SHIMOKAWA TSUTOMU ,  NISHIMURA YUKIO ,  YAMAMOTO MASASHI

IPC: G03F7/039 ,  C08G63/66 ,  C08G65/04 ,  G03F7/032 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new acid-dissociating group-containing resin and a radiation-sensitive resin composition having high transparency to a radiation, satisfying basic performances required by a resist, such as sensitivity, resolution, dry etching resistance and pattern shape, excellent in adhesiveness to a substrate, causing no development defect in microfabrication and capable of producing semiconductor devices in a high yield.
SOLUTION: The acid-dissociating group-containing resin is alkali-insoluble or slightly alkali-soluble, becomes readily alkali-soluble by the action of an acid and contains a repeating unit containing an ether bond in the principal chain. The radiation-sensitive resin composition comprises the acid-dissociating group-containing resin and a radiation-sensitive acid generator.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种新的含酸解离基团的树脂和对辐射具有高透明度的辐射敏感性树脂组合物，满足抗蚀剂所需的基本性能，例如灵敏度，分辨率，耐干蚀刻性 和图案形状，与基板的粘附性优异，在微细加工中不产生显影缺陷，并且能够以高产率制造半导体器件。 解决方案：含酸解离基团的树脂是碱不溶性或轻微碱溶性的，通过酸的作用变得容易碱溶，并含有在主链中含有醚键的重复单元。 辐射敏感性树脂组合物包含含酸解离基团的树脂和辐射敏感性酸发生剂。 版权所有（C）2004，JPO

公开(公告)号：JP2003149820A

公开(公告)日：2003-05-21

申请号：JP2002244094

申请日：2002-08-23

Applicant: JSR CORP

Inventor： IWAZAWA HARUO ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU ,  KAWAGUCHI KAZUO ,  TANAKA MASATO

IPC: G03F7/075 ,  C08F32/08 ,  C08G10/02 ,  C08G77/14 ,  G03F7/039 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a dense pattern independently of standing waves and capable of further forming a resist pattern having a high aspect ratio by using an underlayer film excellent in dry etching resistance and usable as a thin film in combination with a specified polysiloxane-base radiation-sensitive resin composition having high transparency at =80 wt.% carbon content and a weight average molecular weight (expressed in terms of polystyrene) of 500-100,000 and irradiation with radiation is carried out. The bilayer film for pattern formation is obtained by forming a coating film comprising the radiation-sensitive resin composition on the underlayer film.

公开(公告)号：JP2003137860A

公开(公告)日：2003-05-14

申请号：JP2002237135

申请日：2002-08-15

Applicant: JSR CORP

Inventor： YONEDA EIJI ,  TONERI TATSUYA ,  O ISAMU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/004 ,  C07C317/28 ,  C07C317/30 ,  C07C317/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a sulfonyl oxime compound useful as an acid generator sensitive to far-ultraviolet radiation or the like, and to provide a radiation- sensitive resin composition using the same. SOLUTION: This sulfonyloxime compound (may be in the form of its dimmer) is shown by general formula (1) [wherein, R is H, an alkyl or the like; R is an alkyl or the like; X is a halogen atom; Y is R , CO-R (R is H or an alkyl) or the like]. The 2nd objective radiation-sensitive acid generator comprises the same. The last objective positive- or negative-type radiation- sensitive resin composition of chemical amplification type contains the acid generator.

公开(公告)号：JP2003015302A

公开(公告)日：2003-01-17

申请号：JP2002120079

申请日：2002-04-23

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： NAGAI TOMOKI ,  NUMATA ATSUSHI ,  KOBAYASHI HIDEKAZU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F12/24 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0392 ,  G03F7/0045 ,  Y10S430/121

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high sensitivity, high resolution and a high radiation transmittance, excellent in smoothness of a pattern surface in micropattern and capable of preventing partial insolubilization in overexposure without impairing basic solid state properties as a resist such as pattern shape, dry etching resistance and heat resistance. SOLUTION: The radiation sensitive resin composition contains (A) a compound having an alkaloid backbone such as t-butyl cholic acid or t- butoxycarbonylmethyl lithocholic acid, (B) an alkali-insoluble or slightly alkali- soluble resin having hydroxystyrene-base repeating units and acid dissociable group-containing repeating units and (C) a radiation sensitive acid generator.

Abstract translation: 要解决的问题：提供具有高灵敏度，高分辨率和高透射率的辐射敏感性树脂组合物，微图案中的图案表面的平滑度优异，并且能够在不损害作为抗蚀剂的基本固态特性的情况下防止过度曝光中的部分不溶解 例如图案形状，耐干蚀刻性和耐热性。 解决方案：辐射敏感性树脂组合物含有（A）具有生物碱骨架的化合物，例如叔丁基胆酸或叔丁氧基羰基甲基石胆酸，（B）具有羟基苯乙烯基重复单元的碱不溶性或微碱溶性树脂 和酸解离基团的重复单元和（C）辐射敏感性酸发生剂。

公开(公告)号：JP2002278060A

公开(公告)日：2002-09-27

申请号：JP2001076486

申请日：2001-03-16

Applicant: JSR CORP

Inventor： SANO KIMIYASU ,  MIYAJIMA FUMINAO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/022 ,  C08K5/13 ,  C08K5/42 ,  C08L61/10 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition ensuring good resolution and a good section shape of a pattern and suitable for use as a positive type resist having a good margin for exposure. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- soluble novolak resin and (B) a naphthoquinonediazidosulfonic ester compound of a phenol compound of formula (1) [where R1 and R2 are each a monovalent organic group having alkyl or aryl; R3 is H or alkyl; and (a) and (b) are each an integer of 0-2] having a structure corresponding to tertiary carbon in a position adjacent to a hydroxyl group. Preferably (C) a low molecular weight compound containing two or three benzene rings and having at least one hydroxyl group on each of the benzene rings is further contained.

公开(公告)号：JP2002214777A

公开(公告)日：2002-07-31

申请号：JP2001344388

申请日：2001-11-09

Applicant: JSR CORP

Inventor： KAWAGUCHI KAZUO ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/004 ,  C08F8/28 ,  C08F290/04 ,  C08F299/02 ,  G02B1/11 ,  G02B1/111 ,  G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection coating-forming composition capable of forming a resist pattern having a high antireflection effect, not causing intermixing and excellent in resolution, precision, etc. SOLUTION: The antireflection coating-forming composition contains a polymer having a structural unit represented by formula (1) and a solvent. In the formula (1), R1 is a monovalent atom other than a hydrogen atom or a monovalent group; n is an integer of 0-4, when n is 2-4, a plural number of R1s are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group.