Abstract:
PROBLEM TO BE SOLVED: To provide a compound having a sulfonyl structure, giving excellent resist pattern and useful as an acid generating agent sensitive to active radiation such as far ultraviolet radiation, a radiation-sensitive acid generating agent produced by using the compound and a positive-type or negative-type chemical- amplification radiation-sensitive resin composition. SOLUTION: The compound having a sulfonyl structure is expressed by general formula I [R to R are each H, a 1-20C substituted/unsubstituted alkyl or alkenyl or a substituted/unsubstituted aryl or heteroaryl; and Y is O, S, =N-R , =N-OR , =N-N-R or the like (R and R are each same as R to R )]. Concrete example of the compound of general formula I is 2- methoxyimino-2-indanonoxime-1-propanesulfonate.
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive composition excellent in storage stability as well as in resolution and environmental resistance as a chemical amplification type resist sensitive to active radiation, e.g. UV rays such as g- or i-line, KrF, ArF or F 2 excimer laser light, far UV typified by EUV (extreme-ultraviolet radiation) or an electron beam. SOLUTION: The radiation sensitive resin composition contains a nitrogen- containing compound having a specified structure. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive composition excellent in storage stability as well as in resolution and environmental resistance as a chemical amplification type resist sensitive to active radiations, e.g. UV rays such as g- or i-line, KrF, ArF or F2 excimer laser light, far UV typified by EUV (extreme-ultraviolet radiation) or an electron beam. SOLUTION: The radiation sensitive resin composition contains a nitrogen- containing compound having a specified structure.
Abstract:
PROBLEM TO BE SOLVED: To provide a novel polysiloxane which exhibits a high transparency at a wavelength of 193 nm or lower, even at a wavelength of 157 nm or lower, and even at a wavelength of 147 nm, 134 nm, etc., and is excellent in resistance to dry etching; and a radiation-sensitive resin composition containing the polysiloxane. SOLUTION: This polysiloxane has structural units (I) and/or structural units (II) represented by formula (1) (wherein R is a fluorinated or fluoroalkylated monovalent aromatic or alicyclic group; and R is the above monovalent aromatic or alicyclic group, H, a halogen, a monovalent hydrocarbon group, a haloalkyl group or an amino group) and has acid-associable groups. The radiation-sensitive resin composition contains the polysiloxane and a radiation-sensitive acid generator.
Abstract translation:要解决的问题:即使在157nm或更低的波长,甚至在147nm,134nm等的波长下,也提供了在193nm以下的波长下显示高透明度的新型聚硅氧烷,以及 耐干蚀刻性优异; 和含有聚硅氧烷的辐射敏感性树脂组合物。 解决方案:该聚硅氧烷具有由式(1)表示的结构单元(I)和/或结构单元(II)(其中R 1是氟化或氟代烷基化的单价芳族或脂环族基团; R 2是上述一价 芳族或脂环族基团,H,卤素,一价烃基,卤代烷基或氨基),并且具有酸相关基团。 辐射敏感性树脂组合物含有聚硅氧烷和辐射敏感性酸发生剂。
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high sensitivity, high resolution and a high radiation transmittance, excellent in smoothness of a pattern surface in micropattern and capable of preventing partial insolubilization in overexposure without impairing basic solid state properties as a resist such as pattern shape, dry etching resistance and heat resistance. SOLUTION: The radiation sensitive resin composition contains (A) a compound having an alkaloid backbone such as t-butyl cholic acid or t- butoxycarbonylmethyl lithocholic acid, (B) an alkali-insoluble or slightly alkali- soluble resin having hydroxystyrene-base repeating units and acid dissociable group-containing repeating units and (C) a radiation sensitive acid generator.
Abstract:
An N-sulfonyloxyimide compound having the formula (1): wherein X represents a single bond or a double bond, Y and Z represent a hydrogen atom or others and may combine to form a cyclic structure; and R is a group having the formula (2): wherein X represents an organic group having an ester linkage, R represents an alkyl group or an alkoxyl group; and m is an integer of 1 to 11 and n is an integer of 0 to 10, satisfying m + n ≤ 11; and chemically amplified positive and negative radiation-sensitive resin compositions using the compound are provided. The N-sulfonyloxyimide compound is a good radiation-sensitive acid-generating agent, has no problem of volatilization or side reaction, can keep dark reaction from taking place during the storage. The compound is useful as a component of radiation-sensitive chemically amplified resists.
Abstract:
A radiation sensitive refractive index changing composition comprising (A) a decomposable compound, (B) a non-decomposable compound having a lower refractive index than the decomposable compound (A), (C) a radiation sensitive decomposer and (D) a stabilizer. By exposing the composition to radiation through a pattern mask, the above components (C) and (A) of an exposed portion are decomposed and a refractive index difference is made between the exposed portion and unexposed portion, thereby forming a pattern having different refractive indices.
Abstract:
An N-sulfonyloxyimide compound having the formula (1): wherein X represents a single bond or a double bond, Y and Z represent a hydrogen atom or others and may combine to form a cyclic structure; and R is a group having the formula (2): wherein X represents an organic group having an ester linkage, R represents an alkyl group or an alkoxyl group; and m is an integer of 1 to 11 and n is an integer of 0 to 10, satisfying m + n ≤ 11; and chemically amplified positive and negative radiation-sensitive resin compositions using the compound are provided. The N-sulfonyloxyimide compound is a good radiation-sensitive acid-generating agent, has no problem of volatilization or side reaction, can keep dark reaction from taking place during the storage. The compound is useful as a component of radiation-sensitive chemically amplified resists.
Abstract:
An anti-reflection coating-forming composition is provided. This composition includes a polymer and a solvent. The polymer has a structural unit represented by the formula (1): wherein R1 is a monovalent atom other than a hydrogen atom or a monovalent group, and n is an integer of 0-4, provided that when n is an integer of 2-4, a plural number of R1's are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group. The anti-reflection coating formed from this composition has a high antireflective effect, does not generate intermixing with a resist film, and enables a good resist pattern profile excellent in resolution and precision in cooperation with a positive or negative resist.
Abstract:
A radiation-sensitive composition changing in refractive index which compris es (A) a decomposable compound, (B) a nondecomposable compound having a higher refractive index than the decomposable compound (A), (C) a radiation-sensiti ve decomposer, and (D) a stabilizer. When the composition is irradiated with a radiation through a pattern mask, the ingredients (C) and (A) in the irradiated areas decompose to cause a difference in refractive index between the irradiated areas and the unirradiated areas. Thus, a pattern having different refractive indexes is formed.