公开(公告)号：KR1020030044167A

公开(公告)日：2003-06-09

申请号：KR1020010074818

申请日：2001-11-29

Applicant: 삼성전자주식회사

Inventor： 송훈

IPC: B81B7/00

CPC classification number: B81B7/02 ,  B81B2201/01 ,  B81B2201/03 ,  B81C1/00015

Abstract: PURPOSE: An actuator used in a micro electro mechanical system, and tweezers and a switch utilizing the same are provided to reduce power consumption, to improve an operational speed and to easily fabricate the actuator by fabricating each beam of the actuator with the same material. CONSTITUTION: An actuator used in a micro electro mechanical system(100) includes a pair of beams(110,120), which are made of the same material. Lengths of the beams(110,120) are different from each other. The beams(110,120) are parallel aligned to each other. The beams(110,120) are made of metal having a predetermined thermal coefficient, such as copper. Upper ends of the beams(110,120) are fixed to each other by means of a fixing section(130). The fixing section(130) is integrally formed with the beams(110,120). A pair of power supplying terminals(111,121) is formed at a lower end of the beams(110,120).

Abstract translation: 目的：在微机电系统中使用的致动器，以及镊子和使用其的开关，以减少功耗，提高操作速度，并通过用相同的材​​料制造致动器的每个梁来容易地制造致动器。 构成：用于微机电系统（100）的致动器包括由相同材料制成的一对梁（110,120）。 梁（110,120）的长度彼此不同。 梁（110,120）彼此平行对准。 梁（110,120）由具有预定热系数的金属制成，例如铜。 梁（110,120）的上端通过固定部分（130）彼此固定。 固定部分（130）与梁（110,120）一体地形成。 一对供电端子（111,121）形成在梁（110,120）的下端。

公开(公告)号：KR1020170121556A

公开(公告)日：2017-11-02

申请号：KR1020160050174

申请日：2016-04-25

Applicant: 광운대학교 산학협력단

Inventor： 박재영 ,  조현옥 ,  김재우

IPC: H01H59/00

CPC classification number: H01H59/00 ,  B81B2201/01 ,  H01H59/0009 ,  H01H2059/009

Abstract: 본발명은동작전압을낮추기위하여주름진구조의멤브레인의복원력을높이기위하여이중앵커구조를가지는 RF MEMS 스위치및 그제조방법에대한것으로써신뢰성향상을위해새로운구조의정전용량형스위치를제안하고자동작전압을낮추기위하여주름진구조의멤브레인을사용하였고, 복원력을높이기위하여이중앵커구조를사용한이중앵커와주름진멤브레인구조를가짐으로써낮은바이어스전압에서도높은복원력을가져빠른스위칭속도를발휘할수 있는 RF MEMS 스위치및 그제조방법을제공하는데그 목적이있다.

Abstract translation: 本发明是一种操作电压是提出具有用于提高可靠性作为用于RF MEMS开关及其制造具有双锚结构中的相同，以提高该膜以降低操作电压的褶皱结构的弹性的方法的新结构的电容式开关， 作为波纹结构的膜，以便通过具有双锚和波纹状的膜结构具有双锚结构，以提高，即使在低偏置电压的RF MEMS开关，其表现出更快的开关速度带来高回弹性和用于生产过程中的弹性降低，该方法 目的是提供。

公开(公告)号：KR1020170110720A

公开(公告)日：2017-10-11

申请号：KR1020177025345

申请日：2016-02-03

Applicant: 코닌클리케 필립스 엔.브이.

Inventor： 반델프트,페터 ,  반덴빅겔라르,테오도루스,요하네스,페트루스 ,  라더마허,하랄드,요세프,권터 ,  토이니센,보브,베르나르두스,안토니우스

IPC: H01L27/15 ,  H01H1/00 ,  H01L33/36

CPC classification number: H01L33/36 ,  B81B2201/01 ,  H01H1/0036 ,  H01L27/15 ,  H01L33/005

Abstract: 본발명은 LED의전기기계적제어를위한통합된정전스위치(12)를갖는 LED 칩(22)을제공한다. 매달린빔 스위치(12)는도전성제어전극(10) 위에플로트하고, 전극(10)의대전에의해빔(12)은 LED 구조체와외부전극(20) 사이의접속을이루기위해아래로끌어당겨진다. MEMS 스위치와완전히통합된 LED가형성되도록소자들이공통기판(6) 상에장착된다. LED 칩을제조하는방법들이더 제공되는데, 여기서스위칭기구의제조는 LED 구조체의제조와완전히통합된다.

Abstract translation: 本发明提供具有用于LED的机电控制的集成式静电开关（12）的LED芯片（22）。 悬浮梁开关12悬浮在导电控制电极10的上方，并且梁12被向下拉以通过预先设定的步骤建立LED结构和外部电极20之间的连接， 元件安装在公共衬底6上，使得LED与MEMS开关完全集成。 提供制造LED芯片的其他方法，其中开关机构的制造与LED结构的制造完全集成。

公开(公告)号：KR1020020071599A

公开(公告)日：2002-09-13

申请号：KR1020010011734

申请日：2001-03-07

Applicant: 삼성전자주식회사

Inventor： 강석진

IPC: B81B3/00

CPC classification number: B81B3/0021 ,  B81B2201/01 ,  B81B2203/04 ,  B81C1/00015 ,  B81C1/00436

Abstract: PURPOSE: A micro switch and method for manufacturing the same is provided to achieve improved yield rate at a low cost, while using an insulation film having a low dielectric constant and simplifying manufacturing processes. CONSTITUTION: A micro switch comprises a substrate(21); a lower electrode(22) formed on the substrate; an oxide film(23) formed at the exposed surface of the lower electrode; a movable plate(25) arranged on the lower electrode such that the movable plate is spaced apart from the lower electrode; and an anchor interposed between both side surfaces of the movable plate and the substrate, so as to fix the space formed between the movable plate and the lower electrode. The movable plate contains Au or Cu, and the lower electrode is made of an aluminum. A method for manufacturing micro switch, comprises a first step of forming a lower electrode onto a substrate; a second step of forming a sacrificial layer onto the substrate and the lower electrode; a third step of forming a movable plate onto the sacrificial layer; and a fourth step of removing the sacrificial layer and forming an oxide film onto the exposed surface of the lower electrode.

Abstract translation: 目的：提供一种微型开关及其制造方法，以低成本实现提高的成品率，同时使用具有低介电常数的绝缘膜并简化制造工艺。 构成：微型开关包括衬底（21）; 形成在所述基板上的下电极（22） 形成在下电极的露出面的氧化膜（23） 设置在所述下电极上的可动板（25），使得所述可动板与所述下电极间隔开; 以及插入在可动板的两侧表面和基板之间的锚固件，以便固定形成在可动板和下电极之间的空间。 可动板包含Au或Cu，下电极由铝制成。 一种微型开关的制造方法，包括：在基板上形成下部电极的第一工序; 在衬底和下电极上形成牺牲层的第二步骤; 在所述牺牲层上形成可动板的第三步骤; 以及除去牺牲层并在下电极的暴露表面上形成氧化膜的第四步骤。

公开(公告)号：WO2017058335A1

公开(公告)日：2017-04-06

申请号：PCT/US2016/041954

申请日：2016-07-13

Applicant: GENERAL ELECTRIC COMPANY

Inventor： BREWER, Joleyn, Eileen ,  KEIMEL, Christopher, Fred ,  AIMI, Marco, Francesco ,  MINNICK, Andrew, James ,  RUFFALO, Renner, Stephen

IPC: B81B3/00

CPC classification number: B81B3/0027 ,  B81B3/0075 ,  B81B7/0003 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2201/0228 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/053 ,  B81B2207/015 ,  B81B2207/115 ,  B81C1/00134 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00373 ,  B81C2201/0107 ,  G01L9/0042 ,  G01L9/0044

Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.

Abstract translation: 一种用于微电子机械系统（MEMS）装置的系统和方法，其包括形成在基板上的基板和独立悬挂的电镀金属MEMS结构。 独立悬挂的电镀金属MEMS结构包括机械耦合到基底的金属机械元件和机械耦合到机械元件并与之机电连接的种子层，种子层包括难熔金属和耐火材料中的至少一种 金属合金，其中机械元件的厚度基本上大于种子层的厚度，使得独立和悬浮的电镀金属MEMS结构的机械和电学性质由机械元件的材料特性限定。

公开(公告)号：WO2013156978A2

公开(公告)日：2013-10-24

申请号：PCT/IB2013/053113

申请日：2013-04-19

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： BARTSCH, Sebastian Thimotee ,  IONESCU, Mihai

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel (4) connecting a drain (9) and a source (10) electrode and movably fixed by at least two ends (11, 11') acting as said source and drain electrodes, respectively; at least one fixed gate electrode (3, 3') arranged to control a depletion charge (5) in the highly doped conductive channel (4) thereby modulating dimensions of a cross-section of the highly doped conductive channel (4). A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode (3, 3') to the highly doped conductive channel (4), is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel (4) is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极（9）和源极（10）的高度掺杂的导电沟道（4），并且由至少两个端部（11,11'）可移动地固定，其作为 分别为所述源极和漏极; 至少一个固定栅电极（3,3'）布置成控制高掺杂导电沟道（4）中的耗尽电荷（5），从而调制高掺杂导电沟道（4）的横截面的尺寸。 在从固定栅电极（3,3'）定向到高度掺杂的导电通道（4）的电场方向上的横截面的尺寸被设计成使得其可以在 耗尽电荷的影响使得通过固定栅电极的控制可以实现高掺杂导电沟道（4）中的完全耗尽。

公开(公告)号：WO2011162950A3

公开(公告)日：2012-05-24

申请号：PCT/US2011039564

申请日：2011-06-08

Applicant: IBM ,  HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

Inventor： HERRIN RUSSELL T ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K ,  WHITE ERIC J

IPC: B81C1/00 ,  B81B3/00 ,  H01H59/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.

Abstract translation: 形成至少一个微机电系统（MEMS）腔（60b）的方法包括在布线层（14）和衬底（10）上形成第一牺牲腔层（18）。 该方法还包括在第一牺牲腔层上形成绝缘体层（40）。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔（60b）的平坦表面。

公开(公告)号：WO2011162953A3

公开(公告)日：2012-04-19

申请号：PCT/US2011039571

申请日：2011-06-08

Applicant: IBM ,  DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K

Inventor： DUNBAR GEORGE A ,  HE ZHONG-XIANG ,  MALING JEFFREY C ,  MURPHY WILLIAM J ,  STAMPER ANTHONY K

IPC: H01L23/48 ,  B81B7/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires (14) from the lower wiring layer. The method further includes forming an electrode beam (38) over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition (50).

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括在基板上形成下布线层。 该方法还包括从下布线层形成多个分立布线（14）。 该方法还包括在多个离散导线上形成电极束（38）。 形成电极束和多个离散导线中的至少一个形成有最小化后续硅沉积（50）中的小丘和三个点的布局。

公开(公告)号：WO2011162953A2

公开(公告)日：2011-12-29

申请号：PCT/US2011/039571

申请日：2011-06-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  DUNBAR, George, A. ,  HE, Zhong-Xiang ,  MALING, Jeffrey, C. ,  MURPHY, William, J. ,  STAMPER, Anthony, K.

Inventor： DUNBAR, George, A. ,  HE, Zhong-Xiang ,  MALING, Jeffrey, C. ,  MURPHY, William, J. ,  STAMPER, Anthony, K.

IPC: H01L23/48 ,  B81B7/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires (14) from the lower wiring layer. The method further includes forming an electrode beam (38) over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition (50).

Abstract translation: 形成至少一个微机电系统（MEMS）的方法包括在基板上形成下布线层。 该方法还包括从下布线层形成多个分立布线（14）。 该方法还包括在多个离散导线上形成电极束（38）。 形成电极束和多个离散导线中的至少一个形成有最小化后续硅沉积（50）中的小丘和三点的布局。

公开(公告)号：WO2011162950A2

公开(公告)日：2011-12-29

申请号：PCT/US2011/039564

申请日：2011-06-08

Applicant: INTERNATIONAL BUSINESS MACHINE CORPORATION ,  HERRIN, Russell, T. ,  JAHNES, Christopher, V. ,  STAMPER, Anthony, K. ,  WHITE, Eric, J.

Inventor： HERRIN, Russell, T. ,  JAHNES, Christopher, V. ,  STAMPER, Anthony, K. ,  WHITE, Eric, J.

IPC: B81C1/00 ,  B81B3/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.

Abstract translation: 形成至少一个微机电系统（MEMS）腔（60b）的方法包括在布线层（14）和衬底（10）上形成第一牺牲腔层（18）。 该方法还包括在第一牺牲腔层上形成绝缘体层（40）。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔（60b）的平坦表面。