公开(公告)号：EP2504274A1

公开(公告)日：2012-10-03

申请号：EP10787532.0

申请日：2010-11-22

Applicant: BAE Systems Plc.

Inventor： ELEY, Rebecka ,  HUCKER, Martyn John ,  STURLAND, Ian Michael

IPC: B81B3/00 ,  H01L41/09 ,  H01L41/22

CPC classification number: H02N2/043 ,  B81B3/0021 ,  B81B2201/032 ,  B81B2203/0109 ,  H01L41/0933 ,  H01L41/22

Abstract: A MEMS device, and method of fabrication thereof, comprising: a wall arranged as a closed loop(for example, comprising a plurality of interconnected lengths (11-18)); and a bridging portion (54) having two ends and an intermediate portion between these ends; the bridging portion (54) is connected at one end to a first portion of the wall and at the other end to a second portion of the wall non-contiguous to the first; whereby when the intermediate portion is displaced in a direction through a plane defined between the two ends, the portions of the wall connected to the bridging portion (54) are each displaced in a respective direction in the plane, and at least one further portion of the wall is displaced in a direction that is in the plane and that is different to the directions that the two portions connected to the bridging portion (54) are displaced in.

公开(公告)号：EP2018673A2

公开(公告)日：2009-01-28

申请号：EP07725309.4

申请日：2007-05-16

Applicant: MicroGaN GmbH

Inventor： KUNZE, Mike ,  DAUMILLER, Ingo

IPC: H01L41/09 ,  F03G7/06 ,  H01H57/00 ,  H01G5/16 ,  H01F21/04 ,  F04B43/04

CPC classification number: F04B43/046 ,  B81B3/0024 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/032 ,  H01F21/04 ,  H01F2007/068 ,  H01G5/18 ,  H01L41/047 ,  H01L41/0933 ,  H01L41/094 ,  H01L41/0973

Abstract: The invention relates to a semiconductor actuator comprising a substrate base (1), a bending structure (2) which is connected to the substrate base and can be bent at least partially in relation to the substrate base and is provided with semiconductor compounds based on nitrides of main group III elements, and at least two electrical supply contacts (3a, 3b) for impressing an electrical current into the bending structure or for applying an electrical voltage to the bending structure. At least two of the supply contacts are interspaced respectively on the bending structure and/or integrated into the same.

公开(公告)号：EP1934133A1

公开(公告)日：2008-06-25

申请号：EP05791165.3

申请日：2005-10-10

Applicant: Silverbrook Research Pty. Ltd

Inventor： SILVERBROOK, Kia

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

Abstract: A method of forming a suspended beam in a MEMS process is disclosed. In the process a pit (8) is etched into a substrate (5). Sacrificial material (10) is deposited in the pit (8) and on the surrounding substrate surface. The sacrificial material (10) is then removed from the surrounding substrate surface and from the periphery of the pit (8) so that there is a gap between the sacrificial material and at least two sidewalls of the pit. The sacrificial material is then heated so that it reftows such that the remaining sacrificial material contacts the sidewalls of the pit. Material for the beam (12), which is typically a metal, is then deposited on the substrate surface and the reflowed sacrificial material, and the sacrificial material is then removed to form the suspended beam. The beam could be used as the heating element in an inkjet printer.

公开(公告)号：EP1350758B1

公开(公告)日：2007-12-12

申请号：EP03002122.4

申请日：2003-01-30

Applicant: MICROSOFT CORPORATION

Inventor： Sinclair, Michael J.

IPC: B81B3/00 ,  G02B26/08

CPC classification number: B81B3/0054 ,  B81B2201/032 ,  B81B2201/038 ,  B81B2201/045 ,  B81B2201/047

公开(公告)号：EP1840080A2

公开(公告)日：2007-10-03

申请号：EP06291330.6

申请日：2006-08-18

Applicant: Korea Institute of Science and Technology

Inventor： Park, Suk-ho, 115/1204, Dong-a Echoville Apt. ,  Kim, Jin-seok, c/o 108/1202, Samsung Raemian Apt. ,  Hong, Ju-hee, ,  Shin, Hee-sup, c/o 101/1308 Hyoseong Chongsol Apt. ,  Yang, Sung-wwok ,  Lee, Dong-won, c/o 101/1403, Lotte Apt. ,  Lee, Suk-chan ,  Kim, Hui-su, KIST Apt.

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B2201/032 ,  B81B2203/051 ,  Y10S310/80

Abstract: A polymer linear actuator for a micro electro mechanical system (MEMS) and a micro manipulator for a measurement device of cranial nerve signal using the same are provided. The polymer linear actuator has first and second bodies positioned spaced apart to a distance from each other, and one or more pairs of V-type moving units connecting the first and second bodies together, wherein the moving units in pair are opposed to each other to convert a rotation motion of the respective moving units into a linear motion, thereby causing the first and second bodies to move linearly.

Abstract translation: 提供了用于微机电系统（MEMS）和微操纵器使用相同的脑神经信号的测量装置中的聚合物线性致动器。 聚合物的线性致动器具有移动连接第一主体和第二主体单元一起，在worin对移动单元定位在第一和第二主体彼此间隔开的距离，并且一对或多对V型的反对海誓山盟到 转换respectivement移动单元成直线运动，从而使第一和第二本体以线性移动的旋转运动。

公开(公告)号：EP1306350A3

公开(公告)日：2005-12-21

申请号：EP02023905.9

申请日：2002-10-24

Applicant: Rockwell Automation Technologies, Inc.

Inventor： Herbert, Patrick C. ,  Annis, Jeffrey R. ,  Yao, Jun J. ,  Morris, Winfred L. ,  Larsson, Henric ,  Harris, Richard D. ,  Kretschmann, Robert J.

IPC: B81B3/00

CPC classification number: H03H9/462 ,  B81B3/0072 ,  B81B2201/032 ,  B81B2203/0109 ,  B81B2203/051

Abstract: In a MEMS device employing a beam supported by transverse arms, potential bowing of the transverse arms caused by fabrication processes, temperature or local self-heating from resistive losses is accommodated by flexible terminations of the transverse arms. Alternatively, this bowing is controlled so as to provide selective biasing to the beam or mechanical advantage in the sensing of beam motion.

公开(公告)号：EP1040492A1

公开(公告)日：2000-10-04

申请号：EP98959979.0

申请日：1998-12-14

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： FOUILLET, Yves

IPC: H01H1/00

CPC classification number: H01H1/0036 ,  B81B3/0024 ,  B81B2201/016 ,  B81B2201/032 ,  H01G5/16 ,  H01H2001/0042 ,  H01H2037/008 ,  Y10T29/42 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49128 ,  Y10T29/49155

Abstract: The invention concerns a microsystem, in particular for producing microswitches or microvalves, constituted on a substrate (50) and used for producing a shift between a first operating state and a second operating state by means of a heat actuated device with bi-metal switch effect. The heat-actuated device comprises a deformable element (51) connected, by opposite ends, to the substrate (50) so as to present naturally a deflection without stress relative to the substrate surface which faces it, said natural deflection determining the first operating state, the second operating state being produced by the heat-actuated device which induces, by the effect of temperature variation, a deformation of the deformable element (51) tending to reduce its deflection and submitting it to a compressive stress by buckling effect in a direction opposite to its natural deflection.

公开(公告)号：EP1029218A1

公开(公告)日：2000-08-23

申请号：EP98957608.7

申请日：1998-11-05

Applicant: MCNC

Inventor： DHULER, Vijayakumar, R. ,  WOOD, Robert, L.

IPC: G01B7/004 ,  G01B7/34 ,  G01N27/00 ,  B25J7/00

CPC classification number: F03G7/06 ,  B81B3/0024 ,  B81B2201/032 ,  B81B2201/054 ,  B81B2203/0109 ,  B81B2203/051 ,  G02B6/3803 ,  G02B6/4226 ,  H01H1/0036 ,  H01H9/14 ,  H01H61/00 ,  H01H2001/0042 ,  H01H2001/0068 ,  H01H2061/006

Abstract: A microelectromechanical (MEMS) positioning apparatus is provided that can precisely microposition an object in each of the X, Y and Z directions. The MEMS positioning apparatus includes a reference surface, a support disposed in a fixed position to the reference surface, and a stage defining a XY plane that is suspended adjacent to the support and over at least a portion of the reference surface. The MEMS positioning apparatus also includes at least one and, more typically, several actuators for precisely positioning the stage and, in turn, objects carried by the stage. For example, the MEMS positioning apparatus can include first and second MEMS actuators for moving the stage in the XY plane upon actuation. In addition, the MEMS positioning apparatus can include a Z actuator, such as a thermal bimorph structure, for moving the stage in the Z direction.

公开(公告)号：US12037239B2

公开(公告)日：2024-07-16

申请号：US17206116

申请日：2021-03-18

Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.

Inventor： You Qian ,  Humberto Campanella-Pineda ,  Rakesh Kumar

IPC: B81C1/00 ,  B06B1/06 ,  B81B3/00 ,  H10N30/06 ,  H10N30/074 ,  H10N30/093 ,  H10N30/87 ,  H10N39/00 ,  H10N30/853 ,  H10N30/88

CPC classification number: B81C1/00246 ,  B06B1/06 ,  B81B3/0021 ,  H10N30/06 ,  H10N30/074 ,  H10N30/875 ,  H10N39/00 ,  B81B2201/0271 ,  B81B2201/032 ,  B81B2207/015 ,  B81B2207/096 ,  B81B2207/115 ,  B81C2201/0105 ,  B81C2203/0735 ,  B81C2203/0771 ,  H10N30/093 ,  H10N30/853 ,  H10N30/883

Abstract: A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.

公开(公告)号：US20240195005A1

公开(公告)日：2024-06-13

申请号：US18360807

申请日：2023-07-28

Applicant: SK On Co., Ltd.

Inventor： John Cronin ,  Yong Bok MOON ,  Soo Min PARK ,  Hyung Ju PAIK ,  Hae Ryong JEON

IPC: H01M50/308 ,  B81B5/00 ,  H01M10/48

CPC classification number: H01M50/308 ,  B81B5/00 ,  H01M10/48 ,  B81B2201/032

Abstract: A battery cell includes a case accommodating an electrode assembly, a cap plate covering the case, an electrode terminal disposed on the cap plate and electrically connected to the electrode assembly, and a venting part including an active venting device configure to be opened to discharge gas from inside the case according to an electrical signal generated under a preset condition.