公开(公告)号：US20040056210A1

公开(公告)日：2004-03-25

申请号：US10368825

申请日：2003-02-19

Inventor： Ernst F. Scherer

IPC: G21G005/00

CPC classification number: H01J37/3171 ,  G04F10/00 ,  G04F10/10 ,  H01J2237/05 ,  H01J2237/30472

Abstract: Apparatus and methods are disclosed for measuring time delays between pulse streams or other input signals and for measuring ion beam energies in an ion implantation system. A variable delay apparatus is applied to one input signal, and the signals are correlated or compared in a correlator apparatus providing a minimum, maximum, or other ascertainable output signal value when a delay value of the variable delay is representative of the time delay between the first and second input signals. By adjusting or sweeping the variable delay until the ascertainable correlator apparatus output value is obtained, the actual time delay is determined as the dialed-in value of the variable delay that produces the ascertainable correlator output value. The variable delay measurement apparatus and methods may be employed in ion implantation system for measuring ion beam energies using time of flight probes, wherein the system and the time delay measurement apparatus may be calibrated to remove any residual delays of the system, such as delay offsets related to channel imbalance in the system and connecting devices. In addition, a unique error correction method is disclosed, which may be applied to the time delay measurement system measurement to minimize or mitigate errors introduced by electronic components of the system.

公开(公告)号：US06710358B1

公开(公告)日：2004-03-23

申请号：US09513396

申请日：2000-02-25

Applicant: Jiong Chen ,  Peiching Ling

Inventor： Jiong Chen ,  Peiching Ling

IPC: G21K510

CPC classification number: H01J37/3171 ,  H01J2237/05

Abstract: An ion implantation method for reducing energy contamination in low energy beams is disclosed in this invention. The ion implantation method requires the use of a target chamber for containing a target for implantation in vacuum and an ion source chamber with an ion source for generating an ion beam. A means for conducting a mass analysis of the ion beam, such as an analyzer magnet, is also needed. The ion source chamber includes a beam deceleration optics that includes a beam deceleration means for decelerating the ion beam for producing a low energy ion beam. The beam deceleration optics further includes a beam steering means for generating an electrostatic field for steering the ion beam to a targeted ion-beam direction and separating neutralized particles from the ion beam by allowing the neutralized particles to transmit in a neutralized-particle direction slightly different from the targeted ion-beam direction. The ion beam steering means further includes a beam stopper for blocking said neutralized particles from reaching said target of implantation that minimizes energy contamination from high energy neutralized particles.

Abstract translation: 在本发明中公开了一种用于减少能量束中的能量污染的离子注入方法。 离子注入方法需要使用目标室来容纳用于在真空中注入的靶和具有用于产生离子束的离子源的离子源室。 还需要用于进行离子束的质量分析的装置，例如分析器磁体。 离子源室包括光束减速光学器件，其包括用于减小离子束以产生低能量离子束的光束减速装置。 光束减速光学元件进一步包括光束转向装置，用于产生用于将离子束转向目标离子束方向的静电场，并且通过允许中和的颗粒在中和颗粒方向上稍微不同的透射从离子束分离中和的颗粒 从目标离子束方向。 离子束转向装置还包括用于阻挡所述被中和的颗粒到达所述注入目标的束塞，其最小化来自高能中和颗粒的能量污染。

公开(公告)号：US20030038252A1

公开(公告)日：2003-02-27

申请号：US10177970

申请日：2002-06-21

Applicant: Toyo Tanso Co., Ltd.

Inventor： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC: G21K005/10 ,  H01J037/08 ,  G21F001/00 ,  H01L021/425

CPC classification number: H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

Abstract translation: 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US5811820A

公开(公告)日：1998-09-22

申请号：US662336

申请日：1996-06-12

Applicant: Nicholas J. Kirchner ,  Felix G. Gutman ,  Oleg V. Alexandrov ,  Efim A. Dynin

Inventor： Nicholas J. Kirchner ,  Felix G. Gutman ,  Oleg V. Alexandrov ,  Efim A. Dynin

IPC: H01J37/317 ,  C23C14/22 ,  C23C14/32 ,  C23C14/48 ,  H01J37/30 ,  H01J49/42 ,  G01N21/01 ,  B01D59/44 ,  C23C14/00 ,  H01J27/00

CPC classification number: H01J49/4235 ,  C23C14/221 ,  C23C14/48 ,  H01J37/3007 ,  H01J49/009 ,  H01J2237/0041 ,  H01J2237/05 ,  H01J2237/317

Abstract: A device for the parallel processing of ions is provided. The device may be utilized for thin film deposition or ion implantation and may include the following: an ion source, ion capture and storage ion optics, mass selection ion optics, neutral trapping elements, extraction ion optics, beam neutralization mechanisms, and a substrate on which deposition and thin film growth occurs is provided. Ions are captured and stored within a closely packed array of parallel ion conducting channels. The ion conducting channels transport high current low energy ions from the ion source to irradiate the substrate target. During transport, ion species can be mass selected, merged with ions from multiple sources, and undergo gas phase charge exchange ion molecule reactions. Additionally, neutrals from the ion source, ion-molecule reaction reagent gases, residual background gas, or neutralization of ions may be eliminated from the processing stream by turbo pumping, cryo pumping, and cryocondensation on some of the ion optic elements. Different types of ion optic elements, including elements which are parallel or perpendicular to the ion path, and neutral trapping elements may be combined in different ways to achieve thin film ion deposition over a large homogenous substrate surface.

Abstract translation: 提供了用于并联处理离子的装置。 该器件可用于薄膜沉积或离子注入，并且可以包括以下：离子源，离子捕获和存储离子光学器件，质量选择离子光学器件，中性俘获元件，提取离子光学器件，光束中和机构以及衬底 提供了沉积和薄膜生长发生。 离子被捕获并存储在紧密排列的平行离子导电通道阵列中。 离子传导通道从离子源传输高电流低能离子以照射衬底靶。 在运输过程中，可以质量选择离子种类，与来自多个来源的离子合并，并进行气相电荷交换离子分子反应。 此外，离子源的中性粒子，离子分子反应试剂气体，残余背景气体或离子的中和可以通过在一些离子光学元件上的涡轮泵送，低温泵送和低温冷冻从处理流中消除。 可以以不同的方式组合不同类型的离子光学元件，包括平行于或垂直于离子路径的元件和中性俘获元件，以在大的均匀基底表面上实现薄膜离子沉积。

公开(公告)号：WO2016047538A1

公开(公告)日：2016-03-31

申请号：PCT/JP2015/076404

申请日：2015-09-17

Applicant: 国立研究開発法人物質・材料研究機構

Inventor： 関口　隆史 ,  岩井　秀夫

IPC: H01J37/28 ,  H01J37/244

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/05 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/2448 ,  H01J2237/24485

Abstract: 　対物レンズ（２３）の手前に負電圧を印加したグリッド等の電極（２９）を設置すると、電子線等によって試料（２４）から発生した二次電子（２５）中の低エネルギーの電子はこの電極により反射されて試料（２４）側に設置された検出器（２２）に入射するが、高エネルギーの電子は電極で反射されないので、検出器で検出されない。これにより、二次電子をエネルギーで弁別して低エネルギー側だけを検出できるので、例えば試料の表面状態の情報を豊富に含む検出信号を得ることができる。

Abstract translation: 当将特别是施加有负电压的栅格的电极（29）安装在物镜（23）的前面时，从样品（24）产生的二次电子（25）中的低能电子， 通过电子束等被电极反射并入射到安装在样品（24）侧的检测器（22）上。 然而，高能电子不被电极反射，因此不被检测器检测到。 本发明使得可以用能量来区分二次电子，并且仅检测低能量侧。 因此，可以获得包括例如样品的表面状态的富数据的检测信号。

公开(公告)号：WO2016004224A1

公开(公告)日：2016-01-07

申请号：PCT/US2015/038864

申请日：2015-07-01

Applicant: ATOMNAUT INC.

Inventor： LIDDICOAT, Peter, V.

IPC: H01J37/26

CPC classification number: H01J37/285 ,  H01J37/226 ,  H01J49/0004 ,  H01J49/40 ,  H01J2237/04 ,  H01J2237/05 ,  H01J2237/2067 ,  H01J2237/2855

Abstract: An imaging system that selectively alternates a first, non-destructive imaging mode and a second, destructive imaging mode to analyze a specimen so as to determine an atomic structure and composition of the specimen is provided. The field ionization mode can be used to acquire first images of ionized atoms of an imaging gas present in a chamber having the specimen disposed therein, and the field evaporation mode can be used to acquire second images of ionized specimen atoms evaporated from a surface of the specimen with the imaging gas remaining in the chamber. The first and second image data can be analyzed in real time, during the specimen analysis, and results can be used to dynamically adjust operating parameters of the imaging system.

Abstract translation: 提供了选择性地交替第一，非破坏性成像模式和第二破坏性成像模式以分析样本以确定样本的原子结构和组成的成像系统。 场电离模式可以用于获取存在于其中设置有试样的腔室中的成像气体的电离原子的第一图像，并且场蒸发模式可以用于获取从表面蒸发的电离样品原子的第二图像 试样与成像气体残留在腔室中。 可以在样本分析过程中实时分析第一和第二图像数据，结果可用于动态调整成像系统的运行参数。

公开(公告)号：WO2010151810A1

公开(公告)日：2010-12-29

申请号：PCT/US2010/040055

申请日：2010-06-25

Applicant: GATAN, INC. ,  MOONEY, Paul

Inventor： MOONEY, Paul

IPC: H01J37/05 ,  H01J37/244 ,  H01J37/26 ,  G01T1/00

CPC classification number: H01J37/05 ,  H01J37/244 ,  H01J37/26 ,  H01J2237/05 ,  H01J2237/2441 ,  H01J2237/24455 ,  H01J2237/24485 ,  H01J2237/26 ,  H01J2237/2802

Abstract: Methods are disclosed for operating a device having a high energy particle detector wherein the particles create first incoming traversal events, outgoing backscatter events, higher-order in and out events and incoming events caused by particles which backscatter out of the device, hit nearby mechanical structures and are scattered back into the device. Exemplary method steps include discriminating incoming traversal events from outgoing backscatter events, higher-order in and out events and incoming events by limiting dose rate to a level at ensures that separate events do not overlap and discriminating events from background and from other events based on total energy in each event; discriminating backscatter events from incoming traversal events based on electron path shape; or determining that a first event and a second event are coincident with each other and separating incoming form backscatter events based on electron path shape and energy level.

Abstract translation: 公开了用于操作具有高能量粒子检测器的装置的方法，其中颗粒产生第一进入的穿越事件，出射的后向散射事件，高阶进入和离开事件以及由反向散射出装置的颗粒引起的进入事件，撞击附近的机械结构 并分散回设备。 示例性方法步骤包括通过将剂量率限制到一个水平来区分进入的遍历事件与输出的后向散射事件，高阶进入和离开事件以及进入的事件，以确保单独的事件不会与基于总计的背景和来自其他事件的事件重叠和区分事件 每个事件的能量; 基于电子路径形状鉴别反向散射事件与进入的穿越事件; 或者确定第一事件和第二事件彼此重合，并基于电子路径形状和能级分离入射形式的反向散射事件。

公开(公告)号：WO2009131714A3

公开(公告)日：2009-12-30

申请号：PCT/US2009002568

申请日：2009-04-23

Applicant: AXCELIS TECH INC ,  HUANG Y

Inventor： HUANG Y

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/3007 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/24528

Abstract: An ion implantation system (500) comprising an ion source (502) that generates an ion beam (504) along a beam path (505, 507) a mass analyzer component (514) downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture (516) electrode comprising at least one electrode downstream of the mass analyzer component (514) and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element (518) downstream of the resolving aperture electrode that changes the path of the ion beam (507) exiting the deflection element, a deceleration electrode (519) downstream of the deflection element that decelerates the ion beam, a support platform within an end station (526) for retaining and positioning a workpiece (522) which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

Abstract translation: 一种离子注入系统（500），包括离子源（502），离子源（502）沿离子源（505,507）产生离子束（504），质子分析器组件（514）在离子源的下游执行质量分析和角度校正 在所述离子束上具有分辨孔（516）电极，其包括质量分析器部件（514）下游的至少一个电极并且沿着具有根据所选质量分辨率的尺寸和形状的光束路径和光束包络线，偏转元件 在分离孔径电极的下游侧（518），其改变离开偏转元件的离子束（507）的路径;偏转元件下游的减速电极（519），使离子束减速;末端站内的支撑平台 526），用于保持和定位植入有带电离子的工件（522），并且其中端站逆时针安装大约八度，使得偏转的离子束垂直于 e工件。

公开(公告)号：WO2008120656A1

公开(公告)日：2008-10-09

申请号：PCT/JP2008/055841

申请日：2008-03-27

Applicant: 株式会社フェローテック ,  椎名 祐一

Inventor： 椎名 祐一

IPC: C23C14/32 ,  H05H1/32

CPC classification number: H01J37/32633 ,  H01J37/147 ,  H01J37/3178 ,  H01J37/32055 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/3142 ,  H05H1/48

Abstract: 　プラズマガンにおいて、真空アーク放電により発生させるプラズマの有効量を減退させることなく、プラズマに混入するドロップレットを効率的に除去でき、しかも簡易かつ安価にドロップレット除去部を構成でき、高純度プラズマによる成膜等の表面処理精度の向上を図ることのできるプラズマ生成装置を提供する。プラズマガン陰極４０７の周辺は、外囲部材４２０によって包囲され、外囲部材４２０の内側には、ドロップレットを捕集する捕集部材４１１を複数個、多層状に構成したドロップレット除去装置４０６が設けられている。外囲部材４２０、捕集部材４１１及びプラズマ進行路４０２は、アーク電源４０９との接続関係がなく、電気的に中性の浮遊状態に保持されている。

Abstract translation: 具有等离子体枪的等离子体发生装置，其可以有效地除去与等离子体等离子体混合的液滴，而不会降低由真空电弧放电产生的等离子体的有效量，并且其中可以容易且廉价地构成液滴除去部分，并且将膜的表面处理精度高 纯度等离子体可以提高。 等离子体枪的阴极（407）的周边被封闭构件（420）包围，并且通过将多个液滴捕获构件（411）放置在多层中而构成的液滴去除器（406）设置在外壳构件 （420）。 封闭构件（420），捕获构件（411）和等离子体行进路径（402）与电弧电源（409）的连接无关，并且保持在电中性浮动状态。

公开(公告)号：WO1996041900A1

公开(公告)日：1996-12-27

申请号：PCT/US1996010367

申请日：1996-06-12

Applicant: MASSIVELY PARALLEL INSTRUMENTS, INC. ,  KIRCHNER, Nicholas, J. ,  GUTMAN, Felix, G. ,  ALEXANDROV, Oleg, V. ,  DYNIN, Efim, A.

Inventor： MASSIVELY PARALLEL INSTRUMENTS, INC.

IPC: C23C16/00

CPC classification number: H01J49/4235 ,  C23C14/221 ,  C23C14/48 ,  H01J37/3007 ,  H01J49/009 ,  H01J2237/0041 ,  H01J2237/05 ,  H01J2237/317

Abstract: A device (1700) for the parallel processing of ions is provided. The device may be utilized for thin film deposition or ion implantation and may include the following: an ion source (1702), ion capture (1704) and storage ion optics (1708), mass selection ion optics (1706), neutral trapping elements, extraction ion optics, beam neutralization mechanisms, and a substrate on which deposition and thin film growth occurs is provided. Ions are captured and stored within a closely packed array of parallel ion conducting channels. The ion conductive channels transport high current low energy ions from the ion source to irradiate the substrate target. During transport, ion species can be mass selected, merged with ions from multiple sources, and undergo gas phase charge exchange ion molecule reactions. Additionally, neutrals from the ion source, ion-molecule reaction reagent gases, residual background gas, or neutralization of ions may be eliminated from the processing stream by turbo pumping, cryo pumping, and cryocondensation on some of the ion optic elements. Different types of ion optic elements, including elements which are parallel or perpendicular to the ion path, and neutral trapping elements may be combined in different ways to achieve thin film ion deposition over a large homogeneous substrate surface.

Abstract translation: 提供了用于并联处理离子的装置（1700）。 该装置可以用于薄膜沉积或离子注入，并且可以包括以下：离子源（1702），离子捕获（1704）和存储离子光学器件（1708），质量选择离子光学器件（1706），中性捕获元件， 提取离子光学器件，光束中和机构以及其上沉积和薄膜生长发生的衬底。 离子被捕获并存储在紧密排列的平行离子传导通道阵列中。 离子导电通道从离子源传输高电流低能离子以照射衬底靶。 在运输过程中，可以对离子物质进行质量选择，与来自多个源的离子合并，并进行气相电荷交换离子分子反应。 此外，离子源的中性离子，离子分子反应试剂气体，残余背景气体或离子的中和可以通过在一些离子光学元件上的涡轮泵送，低温泵送和低温冷冻从处理流中消除。 可以以不同的方式组合不同类型的离子光学元件，包括平行于或垂直于离子路径的元件和中性捕获元件，以在大的均匀基底表面上实现薄膜离子沉积。