公开(公告)号：US3400354A

公开(公告)日：1968-09-03

申请号：US60427866

申请日：1966-12-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TATSUO KAWASAKI ,  HIROMASA HASEGAWA

IPC: G01R33/07

CPC classification number: G01R33/07

公开(公告)号：US3384793A

公开(公告)日：1968-05-21

申请号：US53260666

申请日：1966-03-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KYOJI MORIYAMA ,  KOICHIRO SHODA

IPC: H01L21/00 ,  H01L21/22 ,  H01L23/48 ,  H01L29/00 ,  H01L29/73

CPC classification number: H01L29/00 ,  H01L21/00 ,  H01L21/22 ,  H01L23/48 ,  H01L24/05 ,  H01L29/73 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12036 ,  H01L2924/00

公开(公告)号：US3384518A

公开(公告)日：1968-05-21

申请号：US49153565

申请日：1965-09-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KOICHIRO SHODA ,  KYOJI MORIYAMA

IPC: C23C2/14 ,  H01L21/00 ,  H01L21/24

CPC classification number: H01L21/00 ,  C23C2/14 ,  H01L21/24 ,  Y10S148/05 ,  Y10S148/151 ,  Y10S438/955

公开(公告)号：US3353057A

公开(公告)日：1967-11-14

申请号：US38100164

申请日：1964-07-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YOSHIO KATO ,  OSAMU KONOSU

IPC: F16K1/30 ,  F16K43/00 ,  F16K51/00 ,  H01J23/24 ,  H01J23/36 ,  H01J25/40 ,  H01P1/08

CPC classification number: F16K51/00 ,  F16K1/30 ,  F16K43/006 ,  H01J23/24 ,  H01J23/36 ,  H01J25/40 ,  H01P1/08

公开(公告)号：US3920434A

公开(公告)日：1975-11-18

申请号：US49127174

申请日：1974-07-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ISHISAKA TSUTOMU

IPC: H01J9/24 ,  C03B23/06 ,  H01J9/00

CPC classification number: H01J9/00 ,  C03B23/065 ,  Y02P40/57

Abstract: In an apparatus for reshaping or molding tubular envelopes of fluorescent lamps or the like into an annular form, an improvement in or relating to a pulley-shaped mold assembly is disclosed which assembly comprises a pair of separable mold half sections which, when mated together, define an annular groove around the periphery of the mold assembly around which is wrapped an envelope sufficiently heated to a workable or reshapable condition so as to be shaped into the annular form. The molding head of the apparatus comprises two mold assemblies of the type described so that two envelopes may be simultaneously shaped into an annular form. Each mold assembly is divided into a pair of half sections by a vertical plane at right angles to the axis thereof in such a way that one of the half sections located closer to the other mold assembly has a thickness shorter than that of the other half section so that the distance between the paired heads holding tubular envelopes may be shortened with the resultant reduction in overall dimensions of the reshaping apparatus and annular fluorescent lamp manufacturing machine.

Abstract translation: 在用于将荧光灯等的管状包层重新成型或成型为环形的装置中，公开了一种带轮状模具组件的改进或涉及滑轮形模具组件的组件，该组件包括一对可分离的半模部分， 在模具组件的周边周围限定环形槽，围绕该环形槽将包封充分加热至可工作或可重复状态，以便成形为环形。 该装置的成型头包括所述类型的两个模具组件，使得两个包络件可以同时成形为环形。 每个模具组件通过与其轴线成直角的垂直平面分成一对半部分，使得位于更靠近另一模具组件的半部分中的一个具有比另一半部分的厚度更短的厚度 使得保持管状信封的成对头部之间的距离可能缩短，从而导致整形装置和环形荧光灯制造机器的整体尺寸的减小。

公开(公告)号：US3911308A

公开(公告)日：1975-10-07

申请号：US44053674

申请日：1974-02-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： AKUTSU HIDEZO ,  YAMAZAKI HARUO ,  IWAMA KATSUAKI ,  SAITO NAOKI

IPC: H01J61/18 ,  H01J61/30

CPC classification number: H01J61/18

Abstract: A high-pressure metal-vapor discharge lamp is formed by enclosing scandium-halide, preferably scandium-iodide (ScI3) in the amount of 1.80 X 10 7 to 9.27 X 10 6 gram mol/cc of confined gas, and at least 3.1 times said halide quantity in atomic ratio of free (metal) scandium, together with some mercury as a buffer gas, inside a translucent alumina tube. Such discharge lamp can maintain a luminous efficiency of over 70 lumen/Watt and a general color-rendering index of over 70 for a period in excess of 6,000 hours, and thus, it is very useful as a general lighting source.

Abstract translation: 高压金属蒸汽放电灯是通过以1.80×10 -7至9.27×10 -6克/立方厘米的封闭气体的量包围卤化钪，优选碘化钪（ScI3）形成的 ，并且在透明氧化铝管内部，游离（金属）钪原子比以及一些汞作为缓冲气体的至少3.1倍的卤化物量。 这种放电灯可以保持超过70流明/瓦的发光效率和超过70小时的一般显色指数超过6000小时，因此，作为一般照明源是非常有用的。

公开(公告)号：US3909317A

公开(公告)日：1975-09-30

申请号：US38365373

申请日：1973-07-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITOH KUNIO ,  INOUE MORIO

IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  C30B19/064 ,  C30B19/10 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/006 ,  Y10S148/025 ,  Y10S148/107 ,  Y10S438/916

Abstract: In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.

Abstract translation: 在诸如通过液相外延生长形成的半导体激光器件的多层半导体器件的制造中，提供以下改进，即，通过使半导体衬底接触第一半导体溶液形成第一外延生长层之后，以及 在通过使所述第一层与第二半导体溶液接触来形成第二外延生长层之前，使所述第一层与第三半导体溶液或液态金属接触，由此在形成在第二半导体溶液之间的结处附近的杂质浓度的斜率 第一层和第二层可以令人满意地陡峭，从而获得良好的性能。

公开(公告)号：US3898504A

公开(公告)日：1975-08-05

申请号：US41601573

申请日：1973-11-15

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： AKUTSU HIDEZOH ,  YAMAZAKI HARUO ,  OKAMOTO TAKIO ,  WATARAI YOSHIAKI ,  BABA SHOICHI

IPC: H01J61/22 ,  H01J61/30 ,  H01J61/82 ,  H01J61/18

CPC classification number: H01J61/825 ,  H01J61/22 ,  H01J61/30

Abstract: An electric discharge lamp having an excellent color rendition with a color acceptability higher than 1.0, a relatively high luminous efficacy and a good life performance, is provided, in a high pressure metal vapor lamp using a polycrystalline alumina ceramic tubing as the arc tube envelope within which sodium as a metal for producing radiant emission, mercury or cadmium as a buffer gas and xenon as a starting inert gas are contained, by controlling such quantities which are variable in the design of the high pressure metal vapor discharge lamp as the lamp wattage W in watts, an increased internal diameter of the arc tube envelope of the lamp d in millimeters, the interelectrode gap length L in millimeters and a lowered average potential gradient of the arc tube E in volts per centimeter in such a manner that they may satisfy the relations:

Abstract translation: 在使用多晶氧化铝陶瓷管作为电弧管外壳的高压金属蒸汽灯中，提供了具有优异的色彩再现性的放电灯，其颜色可接受性高于1.0，发光效率相对较高，寿命性能好。 通过控制高压金属蒸气放电灯的设计可变的量作为灯功率W，包含作为产生辐射发射的金属钠，作为缓冲气体的汞或镉和作为起始惰性气体的氙 以瓦为单位，灯d的电弧管外壳的内径以毫米为单位增加，电极间间隙长度L以毫米为单位，电弧管E的平均电位梯度以伏特/厘米为单位，使得它们可满足 关系：25> / = e> / = 37.7 - 2.05d（但是d> 9）和10 W 10 W +24 {IL> / = 13.3d - 76.4 16d - 58

公开(公告)号：US3875627A

公开(公告)日：1975-04-08

申请号：US34318473

申请日：1973-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： HASEGAWA TADASHI ,  TANAKA HIROFUMI

IPC: H01J9/20 ,  H01J9/233 ,  H01J29/89 ,  H01J31/46 ,  H04N9/07 ,  H01J9/18

CPC classification number: H01J31/46 ,  H01J9/20 ,  H01J29/892

Abstract: A method of manufacturing a target plate for a color television camera tube comprising a face plate including a fiber plate and a photoconductive target electrode having nonconductive portions of a stripe shape and provided on the inner surface of the face plate, comprising the steps of successively forming a transparent conductive film and a photoresist film on the inner surface of the face plate, setting an optical mask on the outer surface of the face plate, irradiating ultraviolet rays on the photoresist film through the photomask and the face plate to selectively expose the photoresist film to the ultraviolet rays and developing the photoresist film to obtain an apertured photoresist film to form the nonconductive portions.

公开(公告)号：US3865651A

公开(公告)日：1975-02-11

申请号：US34025573

申请日：1973-03-12

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ARITA SHIGERU

IPC: H01L21/82 ,  H01L23/535 ,  H01L27/07 ,  H01L27/112 ,  H01L29/00 ,  H01L7/44 ,  B01J17/00 ,  H01L27/10

CPC classification number: H01L23/535 ,  H01L21/82 ,  H01L27/0733 ,  H01L27/112 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/02 ,  Y10S148/053 ,  Y10S148/122 ,  H01L2924/00

Abstract: An improved method of manufacturing series gate type matrix circuits by a self-alignment technique is provided. In this method, the drain and the source of a selected MOS field-effect transistor are short-circuited by a diffused region of a semiconductivity type opposite to that of a silicon substrate and formed prior to the formation of a gate portion. This method eliminates the use of interconnecting conductors for shortcircuiting the drains and the sources with the result that the surface area of the substrate which might have been occupied by such interconnecting conductors may be dispensed with to facilitate integration and moreover any desired matrix circuit may be formed by controlling conduction of such diffused regions.

Abstract translation: 提供了一种通过自对准技术制造串联栅极型矩阵电路的改进方法。 在这种方法中，所选择的MOS场效应晶体管的漏极和源极由与硅衬底相反的半导电性类型的扩散区域短路，并在形成栅极部分之前形成。 该方法消除了使用互连导体来短路漏极和源极，结果可以省去可能被这种互连导体占据的衬底的表面积，以便于集成，而且任何所需的矩阵电路可以 通过控制这种扩散区域的传导来形成。