公开(公告)号：JP5444662B2

公开(公告)日：2014-03-19

申请号：JP2008215367

申请日：2008-08-25

Applicant: ソニー株式会社

Inventor： 伸幸 小池 ,  孝 田村

IPC: H01L41/316 ,  C23C14/08 ,  G01C19/56 ,  G01C19/5621 ,  G01C19/5656 ,  G01C19/5663 ,  G01P7/00 ,  H01L41/08 ,  H01L41/09 ,  H01L41/113 ,  H01L41/18 ,  H01L41/22 ,  H01L41/39 ,  H01L41/43

CPC classification number: B81B3/0081 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/032 ,  G01C19/56 ,  G01C25/00 ,  H01L41/0933 ,  H01L41/1132 ,  H01L41/1136 ,  H01L41/316 ,  Y10T29/42

Abstract: A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb1+X(ZrYTi1−Y)O3+X(0≦̸X≦̸0.3, 0≦̸Y≦̸0.55) and a peak intensity of a pyrochlore phase measured by an X-ray diffraction method is 10% or less with respect to a sum of peak intensities of a (100) plane orientation, a (001) plane orientation, a (110) plane orientation, a (101) plane orientation, and a (111) plane orientation of a perovskite phase, the piezoelectric film being formed on the first electrode film with a film thickness of 400 nm or more and 1,000 nm or less. The second electrode film is laminated on the piezoelectric film.

公开(公告)号：US09975760B2

公开(公告)日：2018-05-22

申请号：US15195061

申请日：2016-06-28

Applicant: Robert Bosch GmbH

Inventor： Mikko VA Suvanto

IPC: H01L29/84 ,  B81B7/00 ,  B81C1/00 ,  H04R1/32

CPC classification number: B81B7/008 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81C1/0023 ,  H01L2224/48137 ,  H04R1/326 ,  H04R2201/003

Abstract: A microelectromechanical system (MEMS) sensor device includes a package housing having a top member, bottom member, and a spacer coupled the top member to the bottom member, defining a cavity. At least one sensor circuit and a MEMS sensor disposed within the cavity of the package housing. A first opening formed on the package housing a control device embedded within the package housing is electrically coupled to the sensor circuit and is controlled to tune the MEMS sensor from a directional mode to an omni-directional mode.

公开(公告)号：US09957154B2

公开(公告)日：2018-05-01

申请号：US15320719

申请日：2015-07-07

Applicant: ULIS

Inventor： Jérôme Favier ,  David Bunel

IPC: H01L23/00 ,  H01L31/18 ,  B81B7/00 ,  B81C1/00 ,  G01J5/20

CPC classification number: B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0145 ,  B81C2203/019 ,  G01J5/20 ,  H01L23/564 ,  H01L31/186 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.

公开(公告)号：US09890038B2

公开(公告)日：2018-02-13

申请号：US15049339

申请日：2016-02-22

Applicant: Versana Micro Inc

Inventor： Bishnu Prasanna Gogoi

IPC: B81B7/02 ,  H01L27/14 ,  H01L27/22 ,  H01L27/16 ,  H05K7/02 ,  H01L41/113

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

公开(公告)号：US20170369305A1

公开(公告)日：2017-12-28

申请号：US15195061

申请日：2016-06-28

Applicant: Robert Bosch GmbH

Inventor： Mikko VA Suvanto

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/008 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2207/012 ,  B81C1/0023 ,  H01L2224/48137 ,  H04R1/326 ,  H04R2201/003

Abstract: A microelectromechanical system (MEMS) sensor device includes a package housing having a top member, bottom member, and a spacer coupled the top member to the bottom member, defining a cavity. At least one sensor circuit and a MEMS sensor disposed within the cavity of the package housing. A first opening formed on the package housing a control device embedded within the package housing is electrically coupled to the sensor circuit and is controlled to tune the MEMS sensor from a directional mode to an omni-directional mode.

公开(公告)号：US09708181B2

公开(公告)日：2017-07-18

申请号：US15048106

申请日：2016-02-19

Applicant: Raytheon Company

Inventor： Adam M. Kennedy ,  Buu Q. Diep ,  Stephen H. Black ,  Tse E. Wong ,  Thomas Allan Kocian ,  Gregory D. Tracy

IPC: H01L21/50 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00333 ,  B81B7/0048 ,  B81B7/0051 ,  B81B2201/0207 ,  B81C1/00825 ,  B81C2203/035

Abstract: A sealed package having a device disposed on a wafer structure and a lid structure boned to the device wafer. The device wafer includes: a substrate; a metal ring disposed on a surface portion of substrate around the device and a bonding material disposed on the metal ring. The metal ring extends laterally beyond at least one of an inner and outer edge of the bonding material. A first layer of the metal ring includes a stress relief buffer layer having a higher ductility than that of the surface portion of the substrate and a width greater than the width of the bonding material. The metal ring extends laterally beyond at least one of the inner and outer edges of the bonding material. The stress relief buffer layer has a coefficient of thermal expansion greater than the coefficient of expansion of the surface portion of the substrate and less than the coefficient of expansion of the bonding material.

公开(公告)号：US20170113928A1

公开(公告)日：2017-04-27

申请号：US15400665

申请日：2017-01-06

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V

Inventor： Andreas GOEHLICH ,  Andreas JUPE ,  Holger VOGT

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00619 ,  B81B7/0003 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/042 ,  B81C1/0019 ,  B81C2201/0187 ,  H01L23/4821 ,  H01L23/5256

Abstract: What is described is a method for producing a device having providing a substrate having an electrode which is exposed at a main side of the substrate. In addition, the method has forming a micro or nanostructure which has a spacer which is based on the electrode, wherein forming has the steps of: depositing a sacrificial layer on the main side, wherein the sacrificial layer has amorphous silicon or silicon dioxide; patterning a hole and/or trench into the sacrificial layer by means of a DRIE process; coating the sacrificial layer by means of ALD or MOCVD so that material of the nano or microstructure forms at the hole and/or trench, and removing the sacrificial layer.

公开(公告)号：US20170011977A1

公开(公告)日：2017-01-12

申请号：US15270145

申请日：2016-09-20

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/10 ,  H01L27/146 ,  H01L23/26 ,  B81B7/00 ,  B81C1/00

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

Abstract translation: 电子装置及其制造方法。 一种或多种方法可以包括提供具有空腔和围绕空腔的表面的盖晶片和具有检测器装置和参考装置的装置晶片。 在某些实例中，可以将钛材料的阻焊层沉积到盖晶片的表面上。 可以进一步激活钛材料的阻焊层作为吸气剂。 在各种示例中，盖晶片和器件晶片可以使用焊料接合在一起，并且钛材料的阻焊层可以防止焊料接触盖晶片的表面。

公开(公告)号：US09520332B2

公开(公告)日：2016-12-13

申请号：US14736042

申请日：2015-06-10

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Adam M. Kennedy ,  Stephen H. Black ,  Thomas A. Kocian

IPC: H01L23/48 ,  H01L23/20 ,  H01L21/00 ,  H01L21/30 ,  H01L23/10 ,  H01L23/498 ,  H01L21/768 ,  B81B7/00 ,  H01L23/26 ,  B81C1/00 ,  H01L21/52 ,  H01L27/146

CPC classification number: H01L23/10 ,  B81B7/0038 ,  B81B2201/0207 ,  B81C1/00269 ,  B81C2203/035 ,  H01L21/52 ,  H01L21/76841 ,  H01L23/26 ,  H01L23/49866 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.

公开(公告)号：US20160340179A1

公开(公告)日：2016-11-24

申请号：US15227181

申请日：2016-08-03

Applicant: RAYTHEON COMPANY

Inventor： Roland W. Gooch ,  Buu Q. Diep ,  Stephen H. Black ,  Thomas A. Kocian ,  Adam M. Kennedy

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00325 ,  B05D5/061 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C2203/0118

Abstract: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.

Abstract translation: 提供了通过盖晶片的抗反射涂层引起的减少晶片弓的方法。 该方法可以利用其中具有至少一个开口的荫罩，其位于帽晶片中的相对凹陷区域。 该方法还可以包括将至少一层抗反射涂层材料通过荫罩沉积到盖晶片的平面侧上，以在平面侧上提供不连续的涂层。