公开(公告)号：US09663357B2

公开(公告)日：2017-05-30

申请号：US14963362

申请日：2015-12-09

Applicant: Texas Instruments Incorporated

Inventor： Jie Mao ,  Hau Nguyen ,  Luu Nguyen ,  Anindya Poddar

IPC: H01L21/683 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00873 ,  B81B7/007 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2201/047 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00333 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0181 ,  B81C2201/0188 ,  B81C2203/0136 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/19 ,  H01L2221/68359 ,  H01L2224/04105 ,  H01L2224/96 ,  H01L2924/3511

Abstract: A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.

公开(公告)号：US20160282187A1

公开(公告)日：2016-09-29

申请号：US15172983

申请日：2016-06-03

Applicant: PIXART IMAGING INC.

Inventor： CHIH-MING SUN ,  MING-HAN TSAI ,  CHENG-NAN TSAI

IPC: G01J5/02 ,  G01J5/04

CPC classification number: G01J5/0265 ,  B81B7/0064 ,  B81B7/0067 ,  B81B2201/0278 ,  G01J5/041 ,  G01J5/045 ,  G01J5/06 ,  H04N5/2257 ,  H04N5/33

Abstract: A wearable device includes a case and a far infrared temperature sensing device. The case has a first opening. The far infrared temperature sensing device is disposed inside the case of the wearable device. The far infrared temperature sensing device includes an assembly structure, a sensor chip, a filter structure, and a metal shielding structure. The assembly structure has an accommodating space and a top opening. The sensor chip is disposed in the accommodating space of the assembly structure. The filter structure is disposed above the sensor chip. The metal shielding structure is disposed above the sensor chip, and has a second opening to expose the filter structure. The first and second openings are communicated to cooperatively define a through hole.

Abstract translation: 可佩戴装置包括壳体和远红外温度感测装置。 案件有第一个开口。 远红外温度感测装置设置在可穿戴装置的壳体内。 远红外温度感测装置包括组装结构，传感器芯片，过滤器结构和金属屏蔽结构。 组装结构具有容纳空间和顶部开口。 传感器芯片设置在组装结构的容纳空间中。 滤波器结构设置在传感器芯片上方。 金属屏蔽结构设置在传感器芯片上方，并且具有第二开口以暴露过滤器结构。 第一和第二开口被连通以协作地限定通孔。

公开(公告)号：US20160167954A1

公开(公告)日：2016-06-16

申请号：US15050388

申请日：2016-02-22

Applicant: Versana Micro Inc

Inventor： BISHNU PRASANNA GOGOI

IPC: B81B7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

公开(公告)号：US20150137068A1

公开(公告)日：2015-05-21

申请号：US14395626

申请日：2013-04-19

Applicant: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)

Inventor： Sebastian Thimotee Bartsch ,  Mihai Adrian Ionescu

IPC: H03H9/24 ,  B81B3/00

CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极区域和源极区域的高度掺杂的导电沟道; 导电沟道区域是可移动的，并且整个结构至少固定在放置在源极和漏极区域上的这两个端点处; 至少一个固定栅极布置成控制高掺杂导电沟道中的耗尽电荷，从而调制高度掺杂的导电沟道的横截面的尺寸。 在从固定栅电极到高度掺杂的导电沟道取向的电场方向上的横截面的尺寸被设计成使得其可以在耗尽电荷的作用下减小，使得 通过固定栅电极的控制可以实现高掺杂导电沟道中的全部耗尽。

公开(公告)号：US20120228504A1

公开(公告)日：2012-09-13

申请号：US13498795

申请日：2009-09-29

Applicant: Takanori Maeda ,  Takahiro Kawano ,  Kenjiro Fujimoto ,  Atsushi Onoe

Inventor： Takanori Maeda ,  Takahiro Kawano ,  Kenjiro Fujimoto ,  Atsushi Onoe

IPC: G01J5/02

CPC classification number: G01J5/02 ,  B81B3/007 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81B2203/019 ,  G01J5/024

Abstract: A MEMS sensor has a membrane 3 in a polygon released via a support portion 2, and the membrane 3 has a reinforcement rib portion 6 made up of a plurality of radially extending rib portions 6a and a plurality of divisional membranes 7 constructed between adjacent two rib portions 6a, 6a and formed in a polygon with the two rib portions 6a, 6a as two sides.

Abstract translation: MEMS传感器具有通过支撑部分2释放的多边形膜3，膜3具有由多个径向延伸的肋部分6a和多个分隔膜7构成的加强肋部分6，该分隔膜7在相邻的两个肋 部分6a，6a并且以两个肋部6a，6a为两侧形成为多边形。

公开(公告)号：US08128282B2

公开(公告)日：2012-03-06

申请号：US11813308

申请日：2006-01-04

Applicant: Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

Inventor： Ivo Rangelow ,  Tzvetan Ivanov ,  Katerina Ivanova

IPC: G01K5/62

CPC classification number: G01J5/40 ,  B81B3/0018 ,  B81B2201/0278 ,  G01J5/44

Abstract: A microsystem component with a device (3) deformable under the influence of temperature changes is disclosed. The device comprises at least one first (4, 5) and second (8) element with differing thermal expansion coefficients and different thermal conductivities. The elements (4, 5; 8) are physically separate and arranged and connected to each other such that the device (3) assumes flexure states which are dependent on the temperature.

Abstract translation: 公开了一种具有在温度变化影响下可变形的装置（3）的微系统部件。 该装置包括具有不同热膨胀系数和不同导热率的至少一个第一（4,5）和第二（8）元件。 元件（4,5; 8）在物理上是分开的并且彼此连接并且连接，使得装置（3）呈现取决于温度的弯曲状态。

公开(公告)号：US07911010B2

公开(公告)日：2011-03-22

申请号：US11879462

申请日：2007-07-17

Applicant: Joseph R. Stetter

Inventor： Joseph R. Stetter

IPC: H01L29/82

CPC classification number: B81B3/0059 ,  B81B2201/0214 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2203/0118

Abstract: A universal microelectromechanical MEMS nano-sensor platform having a substrate and conductive layer deposited in a pattern on the surface to make several devices at the same time, a patterned insulation layer, wherein the insulation layer is configured to expose one or more portions of the conductive layer, and one or more functionalization layers deposited on the exposed portions of the conductive layer. The functionalization layers are adapted to provide one or more transducer sensor classes selected from the group consisting of: radiant, electrochemical, electronic, mechanical, magnetic, and thermal sensors for chemical and physical variables.

Abstract translation: 一种通用微机电MEMS纳米传感器平台，其具有在表面上以图案沉积的衬底和导电层，以同时制造多个器件，图案化绝缘层，其中绝缘层被配置为暴露导电的一个或多个部分 层和沉积在导电层的暴露部分上的一个或多个官能化层。 功能化层适于提供从由以下组成的组中选择的一个或多个换能器传感器类：用于化学和物理变量的辐射，电化学，电子，机械，磁性和热传感器。

公开(公告)号：US20110002359A1

公开(公告)日：2011-01-06

申请号：US12302677

申请日：2007-04-23

Applicant: Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

Inventor： Hubert Benzel ,  Simon Armbruster ,  Arnim Hoechst ,  Christoph Schelling ,  Ando Feyh

IPC: G01K7/01 ,  C25D5/00

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C2201/0109 ,  G01J5/06 ,  G01J5/20

Abstract: A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

Abstract translation: 特别是用于空间分辨检测的传感器包括基板，至少一个微图案化的传感器元件，其具有值随温度变化的电特性，以及在空腔上方的至少一个隔膜，传感器元件设置在 所述至少一个隔膜的下侧，并且所述传感器元件经由连接线接触，所述连接线在隔膜的顶部或下方延伸。 特别地，多个传感器元件可以形成为通过外延形成的单晶层内的二极管像素。 可以在隔膜内形成以弹性和绝缘方式容纳各个传感器元件的悬挂弹簧。

公开(公告)号：US20100127172A1

公开(公告)日：2010-05-27

申请号：US12623318

申请日：2009-11-20

Applicant: Babak Nikoobakht

Inventor： Babak Nikoobakht

IPC: G01J5/02 ,  H01L31/0352 ,  H01L21/04

CPC classification number: G01J5/02 ,  B81B3/0081 ,  B81B2201/0278 ,  G01J5/023 ,  G01J5/08 ,  G01J5/0853

Abstract: This disclosure provides methods to integrate heat generating nanoparticles to microelectromechanical (MEMs) and photonic devices such as microbolometers and thermopiles for better photodetection and electrical energy generation. Nanoparticles include noble metal and semiconductor nanocrystals of different shapes, as light sensing and heat generating materials.

Abstract translation: 本公开提供了将发热纳米颗粒与微机电（MEM）和光子器件（例如微量热探测器和热电堆）相集成的方法，以获得更好的光电检测和电能产生。 纳米颗粒包括不同形状的贵金属和半导体纳米晶体，作为光感测和发热材料。

公开(公告)号：US20080044939A1

公开(公告)日：2008-02-21

申请号：US11744971

申请日：2007-05-07

Applicant: Androula Nassiopoulou ,  Grigoris Kaltsas ,  Dimitrios Pagonis

Inventor： Androula Nassiopoulou ,  Grigoris Kaltsas ,  Dimitrios Pagonis

IPC: H01L21/02

CPC classification number: G01F1/6888 ,  B81B2201/0278 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0114 ,  B81C2201/0115 ,  G01F1/6845 ,  G01K7/028

Abstract: This invention provides a miniaturized silicon thermal flow sensor with improved characteristics, based on the use of two series of integrated thermocouples (6, 7) on each side of a heater (4), all integrated on a porous silicon membrane (2) on top of a cavity (3). Porous silicon (2) with the cavity (3) underneath provides very good thermal isolation for the sensor elements, so as the power needed to maintain the heater (4) at a given temperature is very low. The formation process of the porous silicon membrane (2) with the cavity (3) underneath is a two-step single electrochemical process. It is based on the fact that when the anodic current is relatively low, we are in a regime of porous silicon formation, while if this current exceeds a certain value we turn into a regime of electropolishing. The process starts at low current to form porous silicon (2) and it is then turned into electropolishing conditions to form the cavity (3) underneath. Various types of thermal sensor devices, such as flow sensors, gas sensors, IR detectors, humidity sensors and thermoelectric power generators are described using the proposed methodology. Furthermore the present invention provides a method for the formation of microfluidic channels (16) using the same technique of porous silicon (17) and cavity (16) formation.

Abstract translation: 本发明提供了一种基于在加热器（4）的每一侧上使用两个集成的热电偶（6,7）的系列，具有改进的特性的小型化硅热流量传感器，它们全部集成在顶部的多孔硅膜（2）上 的腔（3）。 具有下面的空腔（3）的多孔硅（2）为传感器元件提供了非常好的热隔离，因此将加热器（4）保持在给定温度所需的功率非常低。 多孔硅膜（2）与下面的腔（3）的形成过程是两步单电化学过程。 这是基于以下事实：当阳极电流相对较低时，我们处于多孔硅形成的状态，而如果该电流超过一定值，则我们变成电解抛光的方式。 该工艺以低电流开始形成多孔硅（2），然后转化为电解抛光条件以形成下面的空腔（3）。 使用所提出的方法描述了各种类型的热传感器装置，例如流量传感器，气体传感器，红外探测器，湿度传感器和热电发电机。 此外，本发明提供了使用与多孔硅（17）和空腔（16）相同的技术形成微流体通道（16）的方法。