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    Vibration gyro sensor and manufacturing method of vibration element
    133.
    发明专利
    Vibration gyro sensor and manufacturing method of vibration element 有权
    振动陀螺传感器和振动元件的制造方法

    公开(公告)号：JP2007024861A

    公开(公告)日：2007-02-01

    申请号：JP2005374324

    申请日：2005-12-27

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： INAGUMA TERUYUKI ,  SUZUKI KOJI ,  TAKAHASHI KAZUO ,  HONDA JUNICHI ,  NAKASHIO EIJI

    IPC: G01C19/56 ,  G01C19/5642 ,  G01C19/5656 ,  G01C19/5663 ,  G01C19/5783 ,  H01L41/08 ,  H01L41/187 ,  H01L41/22 ,  H01L41/23 ,  H01L41/332 ,  H01L41/335 ,  H01L41/338

    CPC classification number: B81B3/0067 ,  B81B2201/0285 ,  B81B2203/0118 ,  G01C19/5663 ,  G01P15/0802

    Abstract: PROBLEM TO BE SOLVED: To provide a vibration gyro sensor which is attempted to improve in durability at a lower cost, while maintaining the characteristics of size reduction. SOLUTION: The gyro sensor 1 comprises a support substrate 2, having a wiring pattern 5 provided with a plurality of lands 4 and a pair of vibrating elements 20X and 20Y mounted on the supporting substrate 2. Each vibrating element 20 has a base 22 provided with a mounting surface, having the plurality of terminal parts 25 to be connected with the lands 4, and the vibrating parts 23 provided with a substrate facing surface, constituting a surface identical to the mounting surface of the base 22, from which it protrudes like a cantilever from the side periphery of the base 22, the base parts of the vibrator parts 23 have reinforcement parts 129, the sections of which are made gradually large. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种在保持尺寸减小的特性的同时以更低的成本尝试提高耐久性的振动陀螺仪传感器。 解决方案：陀螺仪传感器1包括支撑基板2，其具有设置有多个平台4的布线图案5和安装在支撑基板2上的一对振动元件20X和20Y。每个振动元件20具有基座 22，具有安装面，具有多个端子部25与焊盘4连接，振动部23设置有与基板相对的表面，构成与基座22的安装面相同的面 从基座22的侧缘突出成悬臂状，振子23的基部具有逐渐变大的加强部129。 版权所有（C）2007，JPO＆INPIT

    物理量検出デバイス、電子機器、移動体
    134.
    发明专利
    物理量検出デバイス、電子機器、移動体 有权
    物理量检测装置，电子装置和移动车辆

    公开(公告)号：JP2016061577A

    公开(公告)日：2016-04-25

    申请号：JP2014187354

    申请日：2014-09-16

    Applicant: セイコーエプソン株式会社

    Inventor： 青木 信也

    IPC: H01L41/113 ,  H01L41/047 ,  H01L41/311 ,  H01L25/00 ,  G01C19/5628

    CPC classification number: B81B3/0086 ,  B81B2201/0285 ,  B81B2203/04

    Abstract: 【課題】振動デバイスの駆動電極に電流を流すことによって発生する電気的ノイズが、半導体素子の検出回路へ及ぼす影響を低減させることができる物理量検出デバイスを提供する。 【解決手段】物理量検出デバイスは、半導体素子10と、半導体素子10の平面視で、半導体素子10と一部が重なる物理量検出振動片と、を備え、物理量検出振動片は、駆動電極51,52を有する駆動部と、検出部と、を含み、半導体素子10の平面視で、駆動電極51,52の少なくとも一部の領域が半導体素子10と重ならないことを特徴とする。 【選択図】図1

    Abstract translation: 要解决的问题：提供一种物理量检测装置，其能够减少当电流被馈送到振动装置的驱动电极时产生的由电噪声给出的半导体元件的检测电路的影响。解决方案：物理量 检测装置包括：半导体元件10; 以及物理量检测用振动片，其一部分在半导体元件10的平面图中与半导体元件10重叠。物理量检测用振动片包括：具有驱动电极51,52的驱动部; 和检测部。 在半导体元件10的平面图中，驱动电极51和52的区域的至少一部分不与半导体元件10重叠。选择的图示：图1

    Semiconductor dynamic quantity sensor and method of manufacturing the same
    136.
    发明专利
    Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
    半导体动态数量传感器及其制造方法

    公开(公告)号：JP2013178255A

    公开(公告)日：2013-09-09

    申请号：JP2013080452

    申请日：2013-04-08

    Applicant: Denso Corp ,  株式会社デンソー

    Inventor： FUJII TETSUO ,  YOKURA HISANORI ,  HIGUCHI YUJI

    IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  H01L29/84

    CPC classification number: H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

    Abstract: PROBLEM TO BE SOLVED: To suppress a variation of gaps between the tip of a projection, provided directly underneath a movable portion, and the movable portion in the direction of thickness in a semiconductor dynamic quantity sensor in which a movable portion is partitioned from a semiconductor layer by a groove reaching an insulation layer and an insulation layer, directly underneath the movable portion is removed through the groove.SOLUTION: A substrate made of single-crystal silicon is prepared, in which a semiconductor layer that is made of P conductivity-type silicon having higher impurity concentration than a semiconductor substrate and is arranged on the surface of the semiconductor substrate, with a surface having (100) plane with an insulation layer in between. The semiconductor layer is etched anisotropically to form a groove reaching the insulation layer, so as to partition a movable portion. The insulation layer is etched through the groove, making the groove reach the semiconductor substrate, and the width of the insulation layer directly underneath the movable portion in the horizontal direction is made smaller than that of the movable portion. The semiconductor substrate is subject to alkali-etching through the groove, and a projection the tip of which is in contact with the insulation layer is formed on the surface of the semiconductor substrate directly underneath the movable portion. The insulation layer located directly underneath the movable portion is removed.

    Abstract translation: 要解决的问题：为了抑制半导体动态传感器中的可移动部分与半导体分隔开的半导体动态传感器中的直接位于可移动部分下方的突起的尖端与厚度方向上的可移动部分之间的间隙的变化 通过沟槽直接到达绝缘层的沟槽和绝缘层，通过沟槽去除可移动部分的下面。解决方案：制备由单晶硅制成的衬底，其中由P导电型制成的半导体层 具有比半导体衬底更高的杂质浓度的硅并且被布置在半导体衬底的表面上，其表面具有（100）面并具有绝缘层。 各向异性地蚀刻半导体层以形成到达绝缘层的凹槽，以分隔可移动部分。 通过沟槽蚀刻绝缘层，使沟槽到达半导体衬底，使可动部分的水平方向正下方的绝缘层的宽度小于可动部分的宽度。 半导体衬底经由沟槽进行碱蚀刻，并且其顶端与绝缘层接触的突起形成在可动部分正下方的半导体衬底的表面上。 位于可动部分正下方的绝缘层被去除。

    Semiconductor dynamic quantity sensor and method of manufacturing the same
    138.
    发明专利
    Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
    半导体动态数量传感器及其制造方法

    公开(公告)号：JP2011017693A

    公开(公告)日：2011-01-27

    申请号：JP2010121888

    申请日：2010-05-27

    Applicant: Denso Corp ,  株式会社デンソー

    Inventor： FUJII TETSUO ,  YOKURA HISANORI ,  HIGUCHI YUJI

    IPC: G01P15/125 ,  B81B3/00 ,  B81C1/00 ,  H01L29/84

    CPC classification number: H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

    Abstract: PROBLEM TO BE SOLVED: To suppress a variation of gaps between the tip of the projection provided, directly underneath a movable portion and the movable portion in the direction of thickness in a semiconductor dynamic quantity sensor wherein a movable portion is partitioned from a semiconductor layer by a groove reaching an insulation layer and the insulation layer, directly underneath the movable portion is removed through the groove.SOLUTION: A substrate made of single-crystal silicon is prepared, wherein a semiconductor layer that is made of P conductivity-type silicon having higher impurity concentration than a semiconductor substrate and is arranged on the surface of the semiconductor substrate, with a surface having (100) plane with an insulation layer in between. The semiconductor layer is etched anisotropically to form a groove reaching the insulation layer, so as to partition a movable portion. The insulation layer is etched through the groove, making the groove to reach the semiconductor substrate, and the width of the insulation layer, directly underneath the movable portion in the horizontal direction is made smaller than that of the movable portion. The groove is subject to alkali-etching through the groove, and a projection the tip of which is in contact with the insulation layer is formed on the surface of the semiconductor substrate directly underneath the movable portion. The insulation layer located directly underneath the movable portion is removed.

    Abstract translation: 要解决的问题：为了抑制在半导体动态传感器中的可移动部分与半导体层分隔开的可移动部分与可移动部分之间的厚度方向上的直接位于可移动部分之下的突起的尖端之间的间隙的变化， 通过沟槽直接到达绝缘层和直接在可移动部分下方的绝缘层的沟槽。制备由单晶硅制成的衬底，其中由具有较高的P导电型硅的半导体层制成的半导体层 杂质浓度高于半导体衬底，并且被布置在半导体衬底的表面上，其表面具有（100）面并具有绝缘层。 各向异性地蚀刻半导体层以形成到达绝缘层的凹槽，以分隔可移动部分。 通过沟槽蚀刻绝缘层，使沟槽到达半导体衬底，直到可动部分在水平方向下方的绝缘层的宽度比可动部分的宽度小。 通过沟槽对槽进行碱蚀刻，并且在可动部分的正下方形成半导体衬底的与绝缘层接触的突起。 位于可动部分正下方的绝缘层被去除。

    Vanadium dioxide nanowire, method for producing the same, and nanowire device using vanadium dioxide nanowire
    139.
    发明专利
    Vanadium dioxide nanowire, method for producing the same, and nanowire device using vanadium dioxide nanowire 有权
    一氧化二氮纳米管，其生产方法和使用二氧化氮纳米管的纳米装置

    公开(公告)号：JP2011001202A

    公开(公告)日：2011-01-06

    申请号：JP2009143007

    申请日：2009-06-16

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： ITO DAISUKE

    IPC: C01G31/02 ,  B82B1/00 ,  B82B3/00 ,  G01J1/02

    CPC classification number: B81C1/00111 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0285 ,  B81B2201/0292 ,  B81B2203/0361 ,  B82Y10/00 ,  B82Y40/00 ,  C30B25/00 ,  C30B29/16 ,  C30B29/60 ,  H01G9/058 ,  H01G9/155 ,  H01G11/46 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/775 ,  Y02E60/13

    Abstract: PROBLEM TO BE SOLVED: To provide VOnanowire and a nanowire device using the same.SOLUTION: Nanoparticles or nanodots by a transition metal atom are formed on a substrate 1 as a growth catalyst 3, and VOnanowire is grown up slender and long along the [110] direction on the surface of the substrate heated under reduced pressure by a gas phase-liquid phase-solid phase (VLS) growth method. If the crystal face is made to be the (110) face using tetragonal TiOas a substrate, VOnanowire 2a can be grown to a direction of 90° to the surface of the substrate, and if the crystal face is made to be the (100) face, VOnanowire 2b can be grown to the 45° direction. The forming region of nanowire can be controlled, and VOnanowire whose diameter, growth direction and length are controlled can be formed on the substrate at a high density.

    Abstract translation: 要解决的问题：提供VOnanowire和使用该纳米线的纳米线器件。解决方案：作为生长催化剂3，在作为生长催化剂3的基板1上形成纳米粒子或过渡金属原子的纳米点，并且VOnan线沿着[110 ]方向，通过气相 - 液相 - 固相（VLS）生长法在减压下加热的基板表面上。 如果使用四方晶TiO 2将晶面制成（110）面，则可以将钒纳米线2a生长至与基板表面成90°的方向，如果将晶面设为（100） 面对，VOnanowire 2b可以生长到45°方向。 可以控制纳米线的形成区域，并且可以以高密度在基板上形成其直径，生长方向和长度被控制的VOnanire。

    멤스 마이크로폰 및 그 제조 방법
    140.
    发明授权
    멤스 마이크로폰 및 그 제조 방법 有权
    MEMS麦克风及其制造方法

    公开(公告)号：KR101065292B1

    公开(公告)日：2011-09-19

    申请号：KR1020080131632

    申请日：2008-12-22

    Applicant: 한국전자통신연구원

    Inventor： 이재우 ,  박강호 ,  김종대

    IPC: H04R19/04 ,  H04R31/00

    CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0285 ,  H04R3/00 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003

    Abstract: 본 발명은 멤스(MEMS : Micro Electro Mechanical System) 마이크로폰 및 그 제조 방법에 관한 것으로, 기판의 상부 공정만을 통해 멤스 마이크로폰을 제작함으로써, 기판의 상하부 공정을 모두 이용하던 종래에 비하여 제조 공정을 단순화할 수 있는 것을 특징으로 한다. 따라서, 본 발명에 따르면 간단하고 용이한 제조 공정에 의해 제조 공정에서 발생되는 불량을 최소화하여 제조수율을 증대시킬 수 있으며, 멤스 마이크로폰의 내구성을 높여 외부환경에 대한 시스템의 안정성을 높일 수 있다.
    멤스 마이크로폰, 후방음향챔버, 후방음향챔버 벤트홀, 하부전극

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