Abstract:
1523297 Automatic current control STEIGERWALD STRAHLTECHNIK GmbH 28 Oct 1975 [29 Oct 1974] 44437/75 Heading G3R The current in a charged particle beam is regulated by continuously measuring the emission current of the particle source, correcting the measured value by multiplying it by the ratio of workpiece current to emission current when the beam is first directed on to the workpiece, and comparing the corrected value with a desired workpiece current to produce a current control signal. As shown, electron beam apparatus 10 for boring, cutting or welding a workpiece 12 includes a cathode 14, anode 18 and Wehnelt cylinder control electrode 16, and is energized from a high voltage source 30. A deflection device 24 initially directs the beam on to a collector 26, but a start signal from a source 42 causes the beam to strike the workpiece 12 after passing through a coil 28 which produces a pulse with an amplitude proportional to the instantaneous value of the current striking the workpiece. This pulse is fed to a regulator 36 which effectively divides its amplitude by the total beam emission current as sensed by a resistor 32, thus producing a value for the beam current efficiency which is multiplied by the emission current during operation so as to provide a continuous signal representing actual workpiece current. This signal is compared with a reference voltage from a source 38 using a PI regulator circuit which feeds a signal to a control voltage source 34 connected to the current control electrode 16. Digital counting and logic circuitry for carrying out the functions of the regulator 36 is described with reference to Fig. 2 (not shown), and it is stated that analog circuitry may also be used.
Abstract:
The electric braking system for accelerated charged particle beam is intended for application in high voltage tubes with electron recovery. It has three electrodes mounted behind each other in the path of the beam. The first electrode is of the same potential as the particle beam energy, the second electrode is at a potential near zero, and the third electrode is at lower potential of the same sign as the first electrode, serving as a particle target. The second electrode (11) consists of a set of pointed elements (13), whose tips are directed to the particle beam (5) from two sides. Preferably the pointed elements are in the form of sharp edges in mutually parallel configuration. Alternately the edges may be arranged at mutually orthogonal directions, in order to form a grid structure.
Abstract:
The electron beam irradiation is used in semiconductor elements production, applying photolithographic methods, utilising electron beam sensitive lacquers. For this purpose the photolacquer mask structures are irradiated by electron beams of different energy, ie the edge zones of the photolacquer masks are irradiated with electron beams of higher energy. Preferably these edge zones are irradiated with an energy corresponding to an acceleration voltage of 15 k V or more. Typically the edge zones irradiated with a higher energy are narrower than 015 microns. The diameter of the electron beam for the edge zones irradiation is smaller than that of the beam for inner zones irradiation.
Abstract:
A multi-gap inductor core includes magnetic lamination sheets made of magnetic core material arranged in a stack, and fixing layers made of a fixing material. Each fixing layer is arranged between a corresponding pair of adjacent magnetic lamination sheets. Each fixing layer also includes an embedded mechanical spacer that defines a gap having a predetermined thickness between a corresponding pair of adjacent magnetic lamination sheets.
Abstract:
There is disclosed a method of controlling an electron gun without causing decreases in brightness of the electron beam if a current-limiting aperture cannot be used. The electron gun (10) has a cathode (11), a Wehnelt electrode (12), a control electrode (13), an anode (14), and a controller (22). The Wehnelt electrode (12) has a first opening (12c) in which the tip of the cathode is inserted, and focuses thermal electrons emitted from the tip of the cathode (11). The thermal electrons emitted from the tip of the cathode (11) are caused to pass into a second opening (13c) by the control electrode (13). The anode (14) accelerates the thermal electrons emitted from the cathode (11) such that the thermal electrons passed through the second opening (13c) pass through a third opening (14b) and impinge as an electron beam (B1) on a powdered sample (8). The controller (22) sets the bias voltage and the control voltage based on combination conditions of the bias voltage and control voltage to maintain the brightness of the beam constant.
Abstract:
Provided are an ion beam control apparatus and a control method for controlling an ion beam energy expansion level and an ion beam size in a radial direction. An ion beam control apparatus Sa is provided with an ion beam generating unit 2, and an ion beam control unit 1a in which a generated ion beam (IB) is input and controlled to be output with the prescribed level of energy expansion and the prescribed diameter in the radial direction. In the ion beam control unit 1a, phase rotation by a radio frequency electric field that increases existing probability with the prescribed level of energy is at least used.
Abstract:
An optoelectronic modulator is based on the concentration of an electron beam from an electron gun by a tapered cavity, which sides are photosensitive and change the electrical conductivity under the illumination of light (electromagnetic radiation). The light modulation causes the corresponding changes in the current transported across the walls of the cavity. The remaining part of the electron current exits the cavity aperture and forms an amplitude-modulated divergent electron beam.
Abstract:
A field-emission cathode comprises a substrate having a conductive surface, a gate electrode and a focusing electrode overlying the substrate with insulation layers interposed therebetween, a plurality of cavities formed by penetrating the gate electrode, focusing electrode and insulation layers, and an emitter formed in each of the cavities on the substrate for emission of an electron beam. The emitter has tip located at a level between the gate electrode and the focusing electrode, which receive therebetween a signal for modulating the electron beam at a high frequency.
Abstract:
An electron-beam generator includes an electron-emitting device and a modulating electrode capable of modulating an electron beam emitted from the electron-emitting device in response to an information signal. The modulating electrode and the electron-emitting device are laminated so as to interpose an insulating substrate therebetween.