公开(公告)号：EP0758485A4

公开(公告)日：1997-11-26

申请号：EP95915412

申请日：1995-03-24

Applicant: FED CORP

Inventor： JONES GARY W

IPC: H01J1/304 ,  H01J23/06 ,  H01J29/08 ,  H01J29/20 ,  H01J31/12 ,  H01J37/073 ,  H01J63/04 ,  H01J1/02

CPC classification number: H01J63/04 ,  H01J1/304 ,  H01J23/06 ,  H01J29/085 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2237/06341 ,  H01J2237/08 ,  H01J2237/0835

Abstract: A field emitter device (10) for selective emission of an electron and/or ion beam comprising a substrate member (12) having an array (14) of field emitter elements (16) thereon, in which the field emitter elements and/or substrate member have a varied conformation producing a beam of appropriate focused and/or directional character. Also disclosed is a display article (260) for producing an output in response to impingement of electron beams thereon, comprising a substrate member (262) on which is disposed an array of phosphor elements (264), with a diamond-like film coated on the phosphor elements to maintain the phosphor elements in position on the substrate member. Also disclosed is a field emission apparatus (210) comprising such field emitter device and display article, such as a flat panel display.

Abstract translation: 一种用于选择性发射电子和/或离子束的场致发射体装置（10），包括其上具有场发射体元件（16）阵列（14）的衬底元件（12），其中场发射体元件和/或衬底 成员有不同的构造，产生适当的聚焦和/或方向性特征。 还公开了一种用于产生响应于其上的电子束的撞击而产生输出的显示制品（260），该显示制品包括其上设置有荧光体元件阵列（264）的基板构件（262），其上涂覆有类金刚石膜 荧光体元件将荧光体元件保持在基板构件上的适当位置。 还公开了包括这种场发射器装置和显示器物品（例如平板显示器）的场致发射装置（210）。

公开(公告)号：EP0762371A3

公开(公告)日：1997-07-30

申请号：EP96306140.3

申请日：1996-08-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Oguchi, Takahiro ,  Suzuki, Hidetoshi ,  Sakai, Kunihiro ,  Sakuragi, Takamasa ,  Todokoro, Yasuyuki

IPC: G09G3/22

CPC classification number: G09G3/2011 ,  B82Y10/00 ,  G09G3/2014 ,  G09G3/22 ,  G09G2310/027 ,  G09G2310/0272 ,  G09G2310/0275 ,  G09G2320/0223 ,  H01J2201/30403 ,  H01J2201/3165 ,  H01J2329/00

Abstract: In order to prevent voltage drops across the wiring resistances in a multi-electron source having a plurality of electron emitters wired in the form of a matrix of a plurality of data wiring layer electrodes and a plurality of scanning wiring layer electrodes, a constant current signal is output to each data wiring layer electrode. At this time, each non-selected data wiring layer electrode tends to be set at a high impedance and vary in potential, resulting in an abnormal turn-on operation or an electron orbit shift. A driving circuit for solving this problem is provided. A switch for switching a constant current output unit for outputting a constant current regardless of the impedance of a signal output destination, and a constant voltage output unit for outputting a constant voltage regardless of the impedance of a signal output destination is connected to each data wiring layer electrode. For example, a constant-current circuit (17) as a current output unit always outputs the same current (I1 to In) to a switch (30). A pulse width signal (PW1 to PWn) from a pulse-width modulation circuit (7) serves to switch the mode of outputting a current (I1 to In) to a data wiring layer electrode (D y1 to D yn, ) and the mode of fixing a data wiring layer electrode to voltage GND.

公开(公告)号：EP0757341A1

公开(公告)日：1997-02-05

申请号：EP95830350.5

申请日：1995-08-01

Applicant: SGS-THOMSON MICROELECTRONICS S.r.l.

Inventor： Baldi, Livio

IPC: G09G1/00 ,  H01J31/12 ,  H01J9/02

CPC classification number: G09G3/22 ,  H01J1/3042 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00

Abstract: A pixel emission current limiting resistance is realized by forming a stack of alternately doped amorphous or polycrystalline silicon layers over the cathodic conductors of a FED driving matrix. The stack of amorphous or polycrystalline silicon layers doped alternately n and p provides at least a reversely biased n/p junction having a leakage current that matches the required level of pixel emission current. The reversely biased junction constitutes a nonlinear series resistance that is quite effective in limiting the emission current through anyone of the microtips that form an individually excitable pixel and which are formed on the uppermost layer of the stack.

Abstract translation: 像素发射电流限制电阻是通过形成可替换的堆叠掺杂在FED驱动矩阵的阴极导体非晶硅或多晶硅层实现。 非晶硅或多晶硅层的堆叠掺杂替代地n和p提供至少一个反向偏置N / P结具有漏电流没有发射电流像素的所需的电平相匹配。 的反向偏置结构成非线性串联电阻所做的是在通过微尖的任何限制发射电流非常有效，在独立可激发的像素确实形式和其上形成有堆叠的最上层上。

公开(公告)号：EP0706196A3

公开(公告)日：1996-08-21

申请号：EP95115520.9

申请日：1995-10-02

Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

Inventor： Tanaka, Hiroyoshi ,  Kotera, Koichi ,  Uchida, Masao

IPC: H01J1/30 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: An electron emission cathode includes: an n-type semiconductor film including diamond particles partially projecting from a surface of the n-type semiconductor film; and an anode opposing the n-type semiconductor film with a vacuum interposed therebetween. Electrons are emitted by applying a voltage between the anode and the n-type semiconductor film. Furthermore, an electron emission cathode includes: a conductive film
   a first semiconductor film of a first conductivity type formed on the conductive film;
   an island-like second semiconductor film of a second conductivity type formed on the first semiconductor film; and
   an anode opposing the conductive film with a vacuum interposed therebetween,
   wherein electrons are emitted by applying a voltage between the anode and the second semiconductor film. Furthermore, a thermoelectric cooling device is disclosed.

公开(公告)号：EP0716772A1

公开(公告)日：1996-06-19

申请号：EP95922720.0

申请日：1995-06-27

Applicant: SAES GETTERS S.P.A.

Inventor： CARRETTI, Corrado ,  FERRARIO, Bruno

IPC: C22C14 ,  C22C16 ,  H01J7 ,  H01J9 ,  H01J17 ,  H01J29 ,  H01J31

CPC classification number: H01J7/183 ,  H01J7/18 ,  H01J29/94 ,  H01J2201/30403 ,  H01J2329/00

Abstract: There is described a method for creating and keeping a controlled atmosphere in a FED, essentially free of oxidizing gases and including hydrogen at a pressure comprised between 10?-7 and 10-3¿ mbar, which comprises the step of arranging inside the FED, before it is frit sealed, a getter material previously charged with hydrogen gas. Subsequently, the two parts forming the FED are frit sealed along their perimeter and the FED itself is evacuated during this operation or later, through a suitably arranged tail, which is hermetically closed after being evacuated through a 'tip-off'. The getter material is charged by exposing it to hydrogen gas at a pressure comprised between 10-4 and 2 bar.

公开(公告)号：EP0618605B1

公开(公告)日：1996-02-21

申请号：EP94103619.6

申请日：1994-03-09

Applicant: SIEMENS AKTIENGESELLSCHAFT

Inventor： Stengl, Reinhard, Dr., IBM Fishkill Facility ,  Hönlein, Wolfgang, Dr.

IPC: H01J9/02 ,  H01J1/30 ,  H01J21/10 ,  H01L21/02

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J21/105 ,  H01J2201/30403 ,  H01J2201/30407

公开(公告)号：EP0681312A1

公开(公告)日：1995-11-08

申请号：EP95900936.6

申请日：1994-11-22

Applicant: TDK Corporation

Inventor： SUSUKIDA, Masato ,  HAGIWARA, Jun ,  NAGANO, Katsuto

IPC: H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A cold-cathode electron source element of the present invention has a cold cathode (10) on a substrate (1), and the cold cathode (10) comprises a cold cathode base material (4) and particles (8) of conductive material dispersed in the cold cathode base material (4), the particles having a diameter which is sufficiently smaller than the thickness of the cold cathode (10) and a work function which is lower than that of the cold cathode base material (4). The cold-cathode electron element of the present invention can be driven at a low voltage and provide a high emission current in a stable fashion and superior processibility of cold cathodes, whereby it is possible to enlarge the area of an element.

Abstract translation: 本发明的冷阴极电子源元件在基板（1）上具有冷阴极（10），冷阴极（10）包括冷阴极基材（4）和分散的导电材料颗粒（8） 在冷阴极基材（4）中，颗粒的直径足够小于冷阴极（10）的厚度，并且功函数低于冷阴极基材（4）的直径。 本发明的冷阴极电子元件可以以低电压驱动，并且以稳定的方式提供高发射电流和优异的冷阴极的加工性，从而可以扩大元件的面积。

公开(公告)号：EP0555074A1

公开(公告)日：1993-08-11

申请号：EP93300801.3

申请日：1993-02-03

Applicant: MOTOROLA, INC.

Inventor： Jaskie, James E. ,  Kane, Robert C.

IPC: H01J1/30 ,  H01J3/02

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A depletion mode electron emission apparatus with an electron source including a plurality of preferentially oriented diamond crystallites (603). Applications employing pluralities of electron sources including preferentially oriented diamond crystallites (603) include image display devices (600) .

Abstract translation: 一种具有电子源的耗尽型电子发射装置，包括多个优先取向的金刚石微晶（603）。 使用包括优先取向金刚石微晶（603）的多个电子源的应用包括图像显示装置（600）。

公开(公告)号：EP0500553A1

公开(公告)日：1992-09-02

申请号：EP90914295.0

申请日：1990-09-17

Applicant: MOTOROLA, INC.

Inventor： CHASON, Marc, Kenneth

IPC: H01J1 ,  H01J9 ,  H01J29 ,  H01J31

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30403

Abstract: Dispositif d'émission par effet de champ possédant une pluralité d'éléments d'émetteurs préformés (201, 301). Les éléments d'émetterus comprennent des discontinuités géométriques saillantes et un nombre significatif de ces discontinuités géométriques est orienté de manière à soutenir l'activité désirée de l'émission par effet de champ. Les dispositifs d'émission par effet de champ conduits avec de tels émetteurs peuvent être utilisés pour réaliser un écran plat (Fig. 4).

公开(公告)号：US11688579B2

公开(公告)日：2023-06-27

申请号：US17549854

申请日：2021-12-13

Applicant: ASML Netherlands B.V.

Inventor： Juying Dou ,  Zheng Fan ,  Tzu-Yi Kuo ,  Zhong-wei Chen

IPC: H01J37/073 ,  H01J37/065 ,  H01J1/304 ,  H01J1/14 ,  H01J9/02 ,  H01J9/04 ,  H01J37/26

CPC classification number: H01J37/073 ,  H01J1/14 ,  H01J1/304 ,  H01J9/025 ,  H01J9/042 ,  H01J37/065 ,  H01J37/26 ,  H01J2201/196 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30449 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06308 ,  H01J2237/06316 ,  H01J2237/06341

Abstract: Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.