Abstract:
A resin composition comprising: an inorganic filler (B) comprising an aluminosilicate (A) having a silicon atom content of from 9 to 23% by mass, an aluminum atom content of from 21 to 43% by mass, and an average particle diameter (D50) of from 0.5 to 10 µm; and any one or more thermosetting compounds selected from the group consisting of an epoxy resin (C), a cyanate compound (D), a maleimide compound (E), a phenolic resin (F), an acrylic resin (G), a polyamide resin (H), a polyamideimide resin (I), and a thermosetting polyimide resin (J), wherein a content of the inorganic filler (B) is from 250 to 800 parts by mass based on 100 parts by mass of resin solid content.
Abstract:
Provided is a semiconductor device such that, while being small, it is possible to achieve low inductance responding to high speed switching. The semiconductor device includes a plurality of conductive pattern members (14), on each of which is mounted one or a plurality of power semiconductor chips (12A, 12B), and a printed circuit board (16) wherein a chip rod-form conductive connection member (17) connected to the power semiconductor chip and a pattern rod-form conductive connection member (17a, 17b) connected to the conductive pattern member are disposed on the surface opposing the conductive pattern member, wherein the conductive pattern member (14) is formed of a narrow portion (14b) and a wide portion (14a), the narrow portion of at least one conductive pattern member and the printed circuit board are connected by the pattern rod-form conductive connection member (17b), and a current path is formed between the conductive pattern member and the power semiconductor chip connected via the chip rod-form conductive connection member to the printed circuit board.
Abstract:
An enclosure for thermally stabilizing a temperature sensitive component on a circuit board is provided. The enclosure comprises a first cover section configured to be mounted over a portion of a first side of the circuit board where at least one temperature sensitive component is mounted. The first cover section includes a first lid, and at least one sidewall that extends from a perimeter of the first lid. The enclosure also comprises a second cover section configured to be mounted over a portion of a second side of the circuit board opposite from the first cover section. The second cover section includes a second lid, and at least one sidewall that extends from a perimeter of the second lid. The first and second cover sections are configured to releasably connect with the circuit board.
Abstract:
Provided is a semiconductor device such that, while being small, it is possible to achieve low inductance responding to high speed switching. The semiconductor device includes a plurality of conductive pattern members (14), on each of which is mounted one or a plurality of power semiconductor chips (12A, 12B), and a printed circuit board (16) wherein a chip rod-form conductive connection member (17) connected to the power semiconductor chip and a pattern rod-form conductive connection member (17a, 17b) connected to the conductive pattern member are disposed on the surface opposing the conductive pattern member, wherein the conductive pattern member (14) is formed of a narrow portion (14b) and a wide portion (14a), the narrow portion of at least one conductive pattern member and the printed circuit board are connected by the pattern rod-form conductive connection member (17b), and a current path is formed between the conductive pattern member and the power semiconductor chip connected via the chip rod-form conductive connection member to the printed circuit board.
Abstract:
A copper foil composite comprising a copper foil and a resin layer laminated thereon, satisfying an equation 1: (f 3 x t 3 )/(f 2 x t 2 ) => 1 wherein t 2 (mm) is a thickness of the copper foil, f 2 (MPa) is a stress of the copper foil under tensile strain of 4%, t 3 (mm) is a thickness of the resin layer, f 3 (MPa) is a stress of the resin layer under tensile strain of 4%, and an equation 2:1
Abstract:
A light emitting device package, comprising: a base layer (350) having an flat top surface; a light emitting device (360) located directly on the flat top surface of the base layer; an electrical circuit layer (330) located above the flat top surface of the base layer and including at least one end portion placed adjacent to the light emitting device; an electrode layer (322) disposed above a tip portion of each of said end portion of the electrical circuit layer; and a lens (380) extending at least over the light emitting device and the end portion of the electrical circuit layer and covering the electrode layer.
Abstract:
A light emitting device package, comprising: a base layer (350) having an flat top surface; a light emitting device (360) located directly on the flat top surface of the base layer; an electrical circuit layer (330) located above the flat top surface of the base layer and including at least one end portion placed adjacent to the light emitting device; an electrode layer (322) disposed above a tip portion of each of said end portion of the electrical circuit layer; and a lens (380) extending at least over the light emitting device and the end portion of the electrical circuit layer and covering the electrode layer.
Abstract:
A light emitting device package, comprising: a base layer (350) having an flat top surface; a light emitting device (360) located directly on the flat top surface of the base layer; an electrical circuit layer (330) located above the flat top surface of the base layer and including at least one end portion placed adjacent to the light emitting device; an electrode layer (322) disposed above a tip portion of each of said end portion of the electrical circuit layer; and a lens (380) extending at least over the light emitting device and the end portion of the electrical circuit layer and covering the electrode layer.