-
公开(公告)号：US20230235664A1
公开(公告)日：2023-07-27
申请号：US17582816
申请日：2022-01-24
Applicant: Schlumberger Technology Corporation
Inventor： Remi Robutel , Cleverson Souza Chaves , Mohamed Salim Cherchali , Claire Tassin , Nicolas Renoux
CPC classification number: E21B47/07 , B81B7/0074 , E21B47/01 , E21B47/12 , B81B2201/025 , B81B2201/0214 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292 , B81B2207/07 , B81B2207/091
Abstract: A downhole sensor system includes a first sensor package having a substrate, an integrated circuit chip mounted to the substrate, the integrated circuit chip including a processor, a transducer chip mounted to the integrated circuit chip, and a plurality of sensors configured to measure at least shock, pressure, temperature, and humidity. At least one of the plurality of sensors is mounted to the transducer chip such that a stack is formed at least from the substrate, the integrated circuit, the transducer chip, and the sensor. The plurality of sensors are in communication with the processor.
-
152.发明公开公开(公告)号：US20230219804A1
公开(公告)日：2023-07-13
申请号：US18153795
申请日：2023-01-12
Applicant: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS , King Abdullah University of Science and Technology
Inventor： Xuecui ZOU , Sally AHMED , Hossein FARIBORZI , Nizar JABER
CPC classification number: B81B3/0021 , B81C1/00158 , B81B2201/0278 , B81B2203/0127 , B81B2203/0307 , B81B2203/0315 , B81B2203/04 , B81B2207/017 , B81C2201/0156 , B81C2201/0188
Abstract: A MEMS temperature sensor including a clamped-clamped microbeam having a drive electrode on one side configured for applying an AC current, and a sense electrode diagonally situated on the other side, a first anchor at one end and a second anchor at the other end of the microbeam. The first anchor receive a DC bias currents, which heats the microbeam to an operating temperature. The sense electrode is configured to capacitively sense oscillations in the microbeam due to an applied AC current. The MEMS temperature sensor has a three wafer construction in which the components are formed. The device is encapsulated by aluminum, and metal wires connect the first and second anchor, the drive electrode and the sense electrode to side electrode pads outside of the encapsulation. The MEMS temperature sensor has a linear operating region of 30-60 degrees Celsius.
-
公开(公告)号：US11656128B2
公开(公告)日：2023-05-23
申请号：US17729884
申请日：2022-04-26
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Chin-Jou Kuo , Bor-Shiun Lee , Ming-Fa Chen
CPC classification number: G01J5/20 , B81B3/0072 , B81C1/00666 , B81B2201/0278 , B81B2203/04 , B81C2201/0104 , B81C2201/0107
Abstract: A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.
-
公开(公告)号：US20190086267A1
公开(公告)日：2019-03-21
申请号：US16194212
申请日：2018-11-16
Applicant: PIXART IMAGING INC.
Inventor： CHIH-MING SUN , MING-HAN TSAI , CHENG-NAN TSAI
CPC classification number: G01J5/0265 , B81B7/0064 , B81B7/0067 , B81B2201/0278 , G01J5/041 , G01J5/045 , G01J5/06 , H04N5/2257 , H04N5/33
Abstract: A wearable device includes a case and a far infrared temperature sensing device. The case has a first opening. The far infrared temperature sensing device is disposed inside the case of the wearable device. The far infrared temperature sensing device includes an assembly structure, a sensor chip, a filter structure, and a metal shielding structure. The assembly structure has an accommodating space and a top opening. The sensor chip is disposed in the accommodating space of the assembly structure. The filter structure is disposed above the sensor chip. The metal shielding structure is disposed above the sensor chip, and has a second opening to expose the filter structure. The first and second openings are communicated to cooperatively define a through hole.
-
公开(公告)号：US09862594B2
公开(公告)日：2018-01-09
申请号：US14207461
申请日：2014-03-12
Applicant: Versana Micro Inc.
Inventor： Bishnu Prasanna Gogoi
CPC classification number: B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
Abstract: A wearable device is provided having multiple sensors configured to detect and measure different parameters of interest. The wearable device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The wearable device couples a first parameter to be measured directly to the direct sensor. Conversely, the wearable device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the wearable device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device.
-
Patent Agency Ranking
公开(公告)号：US20170305741A1
公开(公告)日：2017-10-26
申请号：US15518053
申请日：2015-10-12
Applicant: Nokia Technologies Oy
Inventor： Darryl COTTON , Adam ROBINSON , Piers ANDREW
CPC classification number: B81B7/0054 , B81B2201/0278 , B81B2201/0292 , H05K1/0283 , H05K1/167 , H05K2201/09018 , H05K2201/09109 , H05K2201/09263 , H05K2201/10151
Abstract: An apparatus and method wherein the method comprises: a deformable substrate; a curved support structure configured to support at least a portion of a resistive sensor wherein the resistive sensor comprises a first electrode, a second electrode and a resistive sensor material provided between the electrodes; at least one support configured to space the curved support structure from the deformable substrate so that when the deformable substrate is deformed the curved support structure is not deformed in the same way; wherein the resistive sensor is positioned on the curved support structure so as to limit deformation of the resistive sensor when the deformable substrate is deformed.
-
公开(公告)号：US20170217765A1
公开(公告)日：2017-08-03
申请号：US15492193
申请日：2017-04-20
Applicant: Infineon Technologies AG
Inventor： Vijaye Kumar Rajaraman , Yonsuang Arnanthigo , Alfons Dehe , Stefan Kolb
CPC classification number: B81B7/02 , B81B3/0018 , B81B2201/0214 , B81B2201/0257 , B81B2201/0278 , B81C1/00166 , B81C1/00182 , B81C1/00206 , G01N27/223 , H04R19/005 , H04R19/04 , H04R31/003 , H04R2201/003
Abstract: According to an embodiment, a microelectromechanical systems (MEMS) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The MEMS transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. The gas sensitive material has an electrical property that is dependent on a concentration of a target gas.
-
158.发明授权Transportation device having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor 有权在半导体衬底上具有单片集成多传感器装置的运输装置及其方法公开(公告)号：US09327965B2
公开(公告)日：2016-05-03
申请号：US14207443
申请日：2014-03-12
Applicant: Versana Micro Inc.
Inventor： Bishnu Prasanna Gogoi
CPC classification number: B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
Abstract: A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.
Abstract translation: 提供了具有多个传感器的运输装置，其被配置为检测和测量不同的感兴趣的参数。 运输装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 运输装置将待测量的第一参数直接耦合到直接传感器。 相反，运输装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到运输装置。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。
-
159.发明申请MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权半导体基板上的单片集成多传感器器件及其方法公开(公告)号：US20140264657A1
公开(公告)日：2014-09-18
申请号：US14207419
申请日：2014-03-12
Applicant: BISHNU PRASANNA GOGOI
Inventor： BISHNU PRASANNA GOGOI
CPC classification number: B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.
Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。
-
160.发明授权Micromechanical sensor having a variable capacitor and method for detecting electromagnetic radiation using same 有权具有可变电容器的微机械传感器和使用其的电磁辐射检测方法公开(公告)号：US08207500B2
公开(公告)日：2012-06-26
申请号：US12620301
申请日：2009-11-17
Applicant: Sebastian Guenther , Nicolaus Ulbrich , Volker Materna
Inventor： Sebastian Guenther , Nicolaus Ulbrich , Volker Materna
IPC: G01J5/00
CPC classification number: G01J5/02 , B81B3/0024 , B81B2201/0221 , B81B2201/0278 , B81B2203/0181 , G01J5/023 , G01J5/34 , H01G5/16
Abstract: A sensor for detecting electromagnetic radiation, having a detection element; and at least one electrode; the detection element and the at least one electrode forming a variable capacitor, and a change in the capacitance of the capacitor being caused by the detected electromagnetic radiation.
Abstract translation: 一种用于检测电磁辐射的传感器，具有检测元件; 和至少一个电极; 所述检测元件和所述至少一个电极形成可变电容器，以及由检测到的电磁辐射引起的电容器的电容变化。
-
-
-
-
-
-
-
-
-
Search Results
296
records
(took 0.082 seconds)
