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公开(公告)号：DE69123062D1
公开(公告)日：1996-12-19
申请号：DE69123062
申请日：1991-01-15
Applicant: CONS RIC MICROELETTRONICA
Inventor： RASPAGLIESI MARIO , MEDULLA CANDIDO
IPC: C23C14/48 , H01J27/08 , H01J27/22 , H01J37/08 , H01J37/317 , H01L21/265
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公开(公告)号：DE69117889T2
公开(公告)日：1996-09-05
申请号：DE69117889
申请日：1991-11-16
Applicant: CONS RIC MICROELETTRONICA
Inventor： FRISINA FERRUCCIO , TAVOLO NELLA , RASPAGLIESI MARIO
IPC: H01L21/322 , H01L21/22 , H01L21/265 , H01L21/336 , H01L29/78 , H01L29/167
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公开(公告)号：DE68921004D1
公开(公告)日：1995-03-16
申请号：DE68921004
申请日：1989-11-17
Applicant: SGS THOMSON MICROELECTRONICS , CONS RIC MICROELETTRONICA
Inventor： ZISA MICHELE , SCILLA GIUSEPPE , PALARA SERGIO
Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.
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公开(公告)号：IT1248607B
公开(公告)日：1995-01-19
申请号：ITMI911390
申请日：1991-05-21
Applicant: CONS RIC MICROELETTRONICA
Inventor： SUERI STEFANO , PALARA SERGIO
IPC: H03K17/042 , H03K17/14 , H03K17/64 , H01L
Abstract: The driving circuit comprises a detection resistance (R1) interposed between the emitter of the power transistor (T1) and ground, a first circuit part (G1, T4, T5, R2) suitable for generating a first current (I2) being a function of the voltage across said detection resistance (R1) and a second circuit part (TD2, T3, TD1, T2) suitable for generating a driving base current (Ib) of the power transistor (T1) that is proportional to said first current (I2).
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公开(公告)号：IT1241049B
公开(公告)日：1993-12-29
申请号：IT660690
申请日：1990-03-08
Applicant: CONS RIC MICROELETTRONICA
Inventor： RONSISVALLE CESARE
IPC: H01L29/78 , H01L21/331 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/739 , H01L
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Patent Agency Ranking
公开(公告)号：ITMI913267A1
公开(公告)日：1993-06-06
申请号：ITMI913267
申请日：1991-12-05
Applicant: CONS RIC MICROELETTRONICA
Inventor： ZAMBRANO RAFFAELE
IPC: H01L20060101 , H01L21/336 , H01L29/423 , H01L29/78
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公开(公告)号：ITMI913265A1
公开(公告)日：1993-06-06
申请号：ITMI913265
申请日：1991-12-05
Applicant: CONS RIC MICROELETTRONICA , SGS THOMSON MICROELECTRONICS
Inventor： PAPARO MARIO , ZAMBRANO RAFFAELE
IPC: H01L29/78 , H01L20060101 , H01L21/76 , H01L27/02 , H01L27/04 , H01L27/06 , H01L27/08 , H01L27/088
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公开(公告)号：IT9022237A1
公开(公告)日：1992-05-30
申请号：IT2223790
申请日：1990-11-29
Applicant: CONS RIC MICROELETTRONICA
Inventor： FERLA GIUSEPPE , RASPAGLIESI MARIO , TAVOLO NELLA
IPC: H01L21/322 , H01L20060101 , H01L21/22 , H01L21/265 , H01L21/336 , H01L29/78
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公开(公告)号：ITMI913266D0
公开(公告)日：1991-12-05
申请号：ITMI913266
申请日：1991-12-05
Applicant: CONS RIC MICROELETTRONICA
Inventor： MANGIAGLI MARCANTONIO , POGLIESE ROSARIO
Abstract: The insulating characteristics of the package are improved by introducing cuts (10,12), grooves (14) and positioning holes (18) in the metal plate (9) and shaping in appropriate form the retractable positioning pins of the metal plate (9) in the moulding die.
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公开(公告)号：IT9006610A1
公开(公告)日：1991-12-01
申请号：IT661090
申请日：1990-05-31
Applicant: CONS RIC MICROELETTRONICA , SGS THOMSON MICROELECTRONICS
Inventor： GRIMALDI ANTONIO , ZAMBRANO RAFFAELE
IPC: H01L21/8249 , H01L20060101 , H01L21/76 , H01L27/06 , H01L27/088 , H01L29/78
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