公开(公告)号：EP4450956A1

公开(公告)日：2024-10-23

申请号：EP23202329.1

申请日：2023-10-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Kalaparthi, Vivekanand ,  Costin, Keyden

IPC: G01N21/88 ,  G01N21/95 ,  H01L21/67 ,  H01L21/66

Abstract: A system for imaging a substrate, including a single electromagnetic radiation (EMR) emitter at a first side of the substrate. The system further includes a diffuser between the single EMR emitter and the substrate, the electromagnetic radiation from the single EMR emitter passing through the diffuser to a surface of the substrate. The system includes a photodetector at a second side of the substrate, the photodetector configured to capture reflected electromagnetic radiation from the surface of the substrate. The system further includes a computing device configured to render a single image of substantially an entirety of the surface of the substrate from the captured reflected electromagnetic radiation. The single EMR emitter and the photodetector are at an angle relative to the surface of the substrate that is not one of parallel and perpendicular.

公开(公告)号：EP4428909A1

公开(公告)日：2024-09-11

申请号：EP24152503.9

申请日：2024-01-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： ZHU, Xuelian ,  JAIN, Navneet K. ,  KIM, Juhan ,  MAZZA, James P. ,  ZENG, Jia ,  PRITCHARD, David C. ,  RASHED, Mahbub

IPC: H01L21/761 ,  H01L27/06 ,  H01Q1/22 ,  H01L27/02

CPC classification number: H01L21/76224 ,  H01L21/761 ,  H01L27/0629 ,  H01Q1/2283 ,  H01L27/0255

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.

公开(公告)号：EP4421873A1

公开(公告)日：2024-08-28

申请号：EP24152278.8

申请日：2024-01-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： PANDEY, Shesh Mani ,  KRISHNASAMY, Rajendran ,  TAN, Chung Foong

IPC: H01L29/06 ,  H01L29/49 ,  H01L29/78 ,  H01L21/336 ,  H01L29/40

CPC classification number: H01L29/7835 ,  H01L29/4983 ,  H01L29/66659 ,  H01L29/0653 ,  H01L29/513 ,  H01L29/517 ,  H01L29/407

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a device with workfunction metal in a drift region and methods of manufacture. The structure includes: a gate structure having at least a first workfunction metal in a channel region and a second workfunction metal, which is different from the first workfunction metal, in a trench in a drift region; and a sidewall spacer adjacent to the gate structure within the trench in the drift region.

公开(公告)号：EP4418027A1

公开(公告)日：2024-08-21

申请号：EP23190713.0

申请日：2023-08-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： BIAN, Yusheng ,  AUGUR, Roderick Alan

IPC: G02B6/125 ,  G02B6/14 ,  G02B6/122 ,  G02B6/12

CPC classification number: G02B6/1228 ,  G02B6/125 ,  G02B2006/121520130101 ,  G02B2006/1214720130101 ,  G02B6/14

Abstract: Structures for an optical power splitter and methods of forming a structure for an optical power splitter. The structure comprises a spiral waveguide core having an outer perimeter. The structure further comprises a plurality of waveguide cores. Each waveguide core has a section disposed adjacent to the outer perimeter of the spiral waveguide core.

公开(公告)号：EP4404272A1

公开(公告)日：2024-07-24

申请号：EP23202560.1

申请日：2023-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  NGU, Yves T. ,  KANTAROVSKY, Johnatan A. ,  VENTRONE, Sebastian T.

IPC: H01L29/737 ,  H01L29/73 ,  H01L21/8226 ,  H01L23/34 ,  H01L29/08 ,  H01L29/417 ,  H01L21/331

CPC classification number: H01L29/0821 ,  H01L29/7302 ,  H01L29/7371 ,  H01L29/66242 ,  H01L29/41708 ,  H01L27/067 ,  H01L21/764 ,  H01L21/76224 ,  H01L29/0642

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heater terminal contacts, methods of operation and methods of manufacture. The structure includes: a heterojunction bipolar transistor having a collector, sub-collector region, emitter and base region; and heater terminal contacts electrically coupled to the sub-collector region.

公开(公告)号：EP4404269A1

公开(公告)日：2024-07-24

申请号：EP23192844.1

申请日：2023-08-23

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani ,  Krishnasamy, Rajendran

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7835 ,  H01L29/1045 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66659

Abstract: Disclosed are embodiments of a semiconductor structure including a semiconductor device with an active device region and, within the active device region, porous semiconductor material adjacent to an isolation structure. In some embodiments, the semiconductor device can be a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET). The LDMOSFET can include an active device region, a well region within the active device region and, within the well region, an isolation structure, a porous region immediately adjacent to the isolation structure, and a drain drift region that borders the isolation structure (e.g., between a channel region and a drain region). The porous region can modify the electric field in the drain drift region around the isolation structure and, as a result, can improve both drain-to-source breakdown voltage (BVdss) and transconductance (Gm) of the device. Also disclosed are method embodiments for forming the semiconductor structure.

公开(公告)号：EP4401147A1

公开(公告)日：2024-07-17

申请号：EP23203730.9

申请日：2023-10-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Sharma, Santosh ,  Pandey, Shesh Mani ,  Krishnasamy, Rajendran

IPC: H01L29/778 ,  H01L21/336 ,  H01L29/423 ,  H01L29/10 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/1066 ,  H01L29/42376 ,  H01L29/41766 ,  H01L29/66462

Abstract: A transistor on a substrate (101) includes a barrier layer (103) above the substrate and a multi-gate structure on the barrier layer. The multi-gate structure includes a primary gate (140) and a secondary gate (130). The secondary gate has opposing sidewalls, opposing end walls and a top surface. The primary gate includes essentially vertically-oriented first portions (140.1) on the barrier layer positioned laterally adjacent to opposing sidewalls (130.1), respectively, of the secondary gate. Optionally, the primary gate also includes an essentially horizontally-oriented second portion (140.2) on the top surface (130.2) of the secondary gate and/or essentially vertically-oriented third portions on the opposing end walls, respectively. The secondary gate can be a floating gate. Also disclosed is a method of forming the same.

公开(公告)号：EP4394464A1

公开(公告)日：2024-07-03

申请号：EP23204763.9

申请日：2023-10-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Silverstein, Laura J. ,  Shank, Steven M. ,  Holt, Judson R. ,  Bian, Yusheng

IPC: G02B6/122 ,  G02B6/30

CPC classification number: G02B6/305 ,  G02B6/122

Abstract: Disclosed are a structure with a substrate-embedded waveguide and a method of forming the structure. The waveguide includes cladding material lining a trench in a substrate, a core in the trench on the cladding material, and at least one cavity within the core. Each cavity extends from one end of the core toward the opposite end and contains a low refractive index material or is under vacuum so the waveguide is an arrow waveguide. An insulator layer is on the substrate and extends laterally over the waveguide and a semiconductor layer is on the insulator layer. Additionally, depending upon the embodiment, an additional waveguide can be aligned above the substrate-embedded waveguide either on the isolation region or on a waveguide extender that extends at least partially through the isolation region and the insulator layer to the waveguide.

公开(公告)号：EP4391055A1

公开(公告)日：2024-06-26

申请号：EP23198265.3

申请日：2023-09-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Karalkar, Sagar Premnath ,  Gebreselasie, Ephrem ,  Krishnasamy, Rajendran ,  Gauthier, Robert J. ,  Mitra, Souvick

IPC: H01L27/02

CPC classification number: H01L27/0248

Abstract: Structures for an electrostatic discharge protection device and methods of forming same. The structure comprises a first well and a second well in the semiconductor substrate. The first and second wells have a first conductivity type. The structure further comprises a third well and a fourth well in the semiconductor substrate. The third and fourth wells have a second conductivity type, the third well includes a portion that overlaps with the first well, and the fourth well includes a portion that overlaps with the second well.

公开(公告)号：EP4390479A1

公开(公告)日：2024-06-26

申请号：EP23204514.6

申请日：2023-10-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： BIAN, Yusheng

IPC: G02B6/12 ,  G02B6/122

CPC classification number: G02B6/1228 ,  G02B6/12004

Abstract: Structures (10) including a photodetector (14) and methods of forming a structure including a photodetector. The structure comprises a photodetector including a pad (24) having a side edge (25) and a light-absorbing layer (26) disposed on the pad. The structure further comprises a waveguide core (12) including a tapered section (20) positioned adjacent to the side edge (25) of the pad (25) and the light-absorbing layer (26). The tapered section (20) has a width dimension that decreases with decreasing distance from the side edge of the pad (24).