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公开(公告)号：KR1020100091835A
公开(公告)日：2010-08-19
申请号：KR1020090011207
申请日：2009-02-11
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11578 , G11C16/0483 , H01L27/11551 , H01L27/11556 , H01L27/11582 , H01L27/0688
Abstract: PURPOSE: The non-volatile memory device and manufacturing method thereof of the vertical folding structure arrange the NAND string to the folding structure. Height is controlled appropriately even when having the vertical structure. CONSTITUTION: In order to have the folding structure of being extended on the substrate(105) perpendicularity the semiconductor structure(130a) is offered. The semiconductor structure comprises the bottom part(31), and the first sidewall part(32) and the second sidewall part(33). The buried insulating layer(132) fills the space between second side walls and the first. A plurality of control gate electrodes is separately placed according to the first and second sidewall parts.
Abstract translation: 目的：垂直折叠结构的非易失性存储器件及其制造方法将NAND串设置为折叠结构。 即使具有垂直结构，也适当地控制高度。 构成：为了使基板（105）上的折叠结构垂直，提供半导体结构（130a）。 半导体结构包括底部部分（31）和第一侧壁部分（32）和第二侧壁部分（33）。 掩埋绝缘层（132）填充第二侧壁和第一侧壁之间的空间。 根据第一和第二侧壁部分分开放置多个控制栅电极。
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公开(公告)号：KR1020100071605A
公开(公告)日：2010-06-29
申请号：KR1020080130383
申请日：2008-12-19
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L27/11556 , H01L27/11551 , H01L27/11578 , H01L27/0688 , H01L27/10885 , H01L27/10891
Abstract: PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to improve the integration of the nonvolatile memory device by simplifying the arrangement of a via plug and a word line. CONSTITUTION: A plurality of semiconductor pillars is formed on a substrate(105). A plurality of control gate electrodes(120) is stacked on the substrate to surround the semiconductor pillar. A plurality of dummy electrodes(125) is adjacently separated from the control gate electrode. A plurality of via plugs(170) is combined with the control gate electrode. A word line(180) is formed on the via plug. The via plug penetrates through one control gate electrode and a part of the dummy electrodes.
Abstract translation: 目的：提供一种非易失性存储器件及其制造方法，其通过简化通孔插头和字线的布置来改善非易失性存储器件的集成。 构成：在基板（105）上形成多个半导体柱。 多个控制栅电极（120）堆叠在基板上以包围半导体柱。 多个虚拟电极（125）与控制栅电极相邻地分开。 多个通孔塞（170）与控制栅电极组合。 在通孔插头上形成字线（180）。 通孔插塞穿过一个控制栅电极和一部分虚拟电极。
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公开(公告)号：KR100945488B1
公开(公告)日：2010-03-09
申请号：KR1020030065410
申请日：2003-09-20
Applicant: 삼성전자주식회사
IPC: G11B20/18
CPC classification number: H03M13/6331 , H03M13/395 , H03M13/3961 , H03M13/41 , H03M13/4184 , H03M13/6343
Abstract: 본 발명은 비터비 검출 장치에 관한 것으로서, 보다 상세하게는 광디스크용 비터비 검출장치에서 발생하는 코드 오류 경로가 제거된 비터비 검출 장치 및 방법에 관한 것이다. 본 발명에 의하면, 고속 동작이 가능하도록 radix를 확장함에 있어서, PR(a,b) 조건에서도 코드조건에 따라 1T 코드가 포함된 경로가 제거될 수 있는 비터비 검출 장치가 제공된다.
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公开(公告)号：KR1020090124331A
公开(公告)日：2009-12-03
申请号：KR1020080050468
申请日：2008-05-29
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A mirror for light scanning unit and method of manufacturing the same are provided to reduce the fabrication time by reducing the thickness of the protective layer. CONSTITUTION: The mirror for the optical scanning apparatus comprises the epoxy(210), the silver layer(220), and the protective layer(230) and MgO layer(225). The silver layer is formed in epoxy. The protective layer is formed on the top of the silver layer. The MgO layer is formed between the silver layer and protective layer. The bonding layer(212) is formed between epoxy and silver layer. The bonding layer is formed in order to increase the adhesive force between epoxy and the silver layer. The bonding layer is formed on the top of epoxy with the sputtering method by evaporating Ti to the prescribed thickness. The thickness of bonding layer is approximately 50~100Å. The MgO layer increases the adhesive force between the protective layer and the silver layer.
Abstract translation: 目的：提供用于光扫描单元的反射镜及其制造方法，通过减小保护层的厚度来减少制造时间。 构成：光学扫描装置的镜子包括环氧树脂（210），银层（220）和保护层（230）和MgO层（225）。 银层以环氧树脂形成。 保护层形成在银层的顶部。 在银层和保护层之间形成MgO层。 结合层（212）形成在环氧树脂和银层之间。 形成结合层以增加环氧树脂和银层之间的粘合力。 通过溅射法将环氧树脂的顶部形成结合层，通过将Ti蒸发至规定的厚度。 接合层的厚度约为50〜100埃。 MgO层增加了保护层和银层之间的粘合力。
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公开(公告)号：KR1020090020919A
公开(公告)日：2009-02-27
申请号：KR1020070085558
申请日：2007-08-24
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: G11C13/0007 , G11C2213/32 , G11C2213/51 , G11C2213/79 , H01L29/517
Abstract: A resistivity memory device is provided to prevent or minimize out diffusion in which chemical species is diffused to the outside of a resistance alteration layer by using a diffusion stop layer. A resistivity memory device comprises a switching element and a storage node(S2) connected to the switching element. The storage node comprises a first electrode(40), a resistance alteration layer(50) and a second electrode(60) which are successively laminated. A diffusion stop layer is equipped between the first electrode and the resistance alteration layer or the resistance alteration layer and the second electrode. Binding energy of the diffusion stop layer is greater than binding energy of the resistance alteration layer. The resistance alteration layer is a transition metal oxide layer. The diffusion stop layer is a nitride layer. The transition metal oxide layer is one among a nickel oxide layer, a titanium oxide layer, a zirconium oxide layer, a zinc oxide layer and a copper oxide layer.
Abstract translation: 提供了一种电阻率记忆装置，以通过使用扩散停止层来防止或最小化其中化学物质扩散到电阻改变层的外部的扩散。 电阻率存储器件包括开关元件和连接到开关元件的存储节点（S2）。 存储节点包括依次层叠的第一电极（40），电阻改变层（50）和第二电极（60）。 在第一电极和电阻改变层或电阻改变层和第二电极之间设置有扩散阻挡层。 扩散阻挡层的结合能大于电阻变化层的结合能。 电阻变化层是过渡金属氧化物层。 扩散停止层是氮化物层。 过渡金属氧化物层是氧化镍层，氧化钛层，氧化锆层，氧化锌层和氧化铜层之一。
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Patent Agency Ranking186.发明授权
公开(公告)号：KR100885910B1
公开(公告)日：2009-02-26
申请号：KR1020030027543
申请日：2003-04-30
Applicant: 삼성전자주식회사
IPC: H01L21/8247
CPC classification number: H01L29/792 , H01L21/28194 , H01L21/28282 , H01L27/11568 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66833
Abstract: 소정 거리만큼 이격된 소오스 및 드레인 영역이 형성된 반도체 기판; 및 상기 소오스 및 드레인 영역사이의 상기 반도체 기판 상에 양단이 상기 소오스 및 드레인 영역과 접촉되도록 형성된 게이트 적층물을 구비하는 비휘발성 반도체 메모리 장치에 있어서, 상기 게이트 적층물은 터널링막, 질화막(Si
3 N
4 )보다 유전율이 크고 제1 불순물이 도핑된 제1 트랩 물질막, 상기 질화막보다 유전율이 큰 제1 절연막 및 게이트 전극이 순차적으로 적층되어 구성되고, 상기 제1 불순물은 Dy를 포함하는 란탄계열원소인 것을 특징으로 하는 비휘발성 반도체 메모리 장치를 제공한다. 이러한 본 발명을 이용하면, 도핑 농도에 따라 트랩밀도를 효과적으로 조절할 수 있고, 그에 따라 종래보다 낮은 전압으로 데이터를 기록 및 소거할 수 있으며, 종래보다 빠른 동작 속도를 얻을 수 있다.-
公开(公告)号：KR1020080097762A
公开(公告)日：2008-11-06
申请号：KR1020070043025
申请日：2007-05-03
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/66439 , B82Y10/00 , B82Y15/00 , H01L21/02365 , H01L21/02601 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L29/1033 , H01L29/66742 , H01L29/7839 , H01L29/78684 , H01L29/78696 , H01L51/426 , H01L2221/1094
Abstract: The field effect transistor and a manufacturing method thereof are provided to increase the driving speed and decrease the driving voltage by equipping the germanium nano-rods in which the mobility is bigger than the silicon as a channel. The field effect transistor(100) includes the gate oxide(130) formed on the substrate(110); germanium nano-rods(140) in which both ends are exposed; the source electrode(151) and the drain electrode(152) connected with the both ends of the germanium nano-rods; the gate electrode(160) formed on the gate oxide between the source electrode and drain electrode. The germanium nano-rods are embedded in the gate oxide.
Abstract translation: 提供场效应晶体管及其制造方法以通过装配迁移率大于硅的锗纳米棒作为通道来提高驱动速度并降低驱动电压。 场效应晶体管（100）包括形成在基板（110）上的栅极氧化物（130）。 其中两端都露出的锗纳米棒（140） 所述源极电极和所述漏极电极与所述锗纳米棒的两端连接; 形成在源电极和漏电极之间的栅极氧化物上的栅电极（160）。 锗纳米棒嵌在栅极氧化物中。
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公开(公告)号：KR1020080070261A
公开(公告)日：2008-07-30
申请号：KR1020070008089
申请日：2007-01-25
Applicant: 삼성전자주식회사
Inventor： 이정현 , 김은아 , 알렉산드라아프아나세바 , 알렉시포민 , 세르게이베자트프
IPC: H04L9/30
CPC classification number: H04L9/085 , H04L9/302 , H04L9/3249 , H04L2209/80
Abstract: A method and a node for generating a distributed RSA(Rivest Shamir Adleman) signature in an ad-hoc network are provided to share a distributed signature function safely by determining verification for key sharing information and a partial signature through a partial signature witness. A method for generating a distributed RSA signature in an ad-hoc network includes the steps of: at a dealer node, distributing key sharing information generated using an MDS(Maximum Distance Separable) code and a random symmetric matrix to a plurality of nodes(S301); at the nodes, generating a partial signature using the distributed key sharing information, and transmitting the partial signature to the signature generation node(S302); at the signature generation node, generating an RSA signature using the partial signature(S303). The RSA signature is generated using the partial signature received from a less number of nodes than the nodes.
Abstract translation: 提供了一种用于在自组织网络中生成分布式RSA（Rivest Shamir Adleman）签名的方法和节点，用于通过确定密钥共享信息的验证和通过部分签名证人的部分签名来安全地共享分布式签名功能。 一种用于在自组织网络中生成分布式RSA签名的方法包括以下步骤：在经销商节点处，将使用MDS（最大距离可分离）码和随机对称矩阵生成的密钥共享信息分发到多个节点（S301 ）; 在所述节点处，使用所述分布式密钥共享信息生成部分签名，并将所述部分签名发送到所述签名生成节点（S302）; 在所述签名生成节点处，使用所述部分签名生成RSA签名（S303）。 使用从节点数较少的节点接收的部分签名生成RSA签名。
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公开(公告)号：KR1020080068478A
公开(公告)日：2008-07-23
申请号：KR1020070006314
申请日：2007-01-19
Applicant: 삼성전자주식회사
CPC classification number: G09G3/2003 , G09G3/3406 , G09G2320/0646 , G09G2330/021 , G09G2360/16
Abstract: An image processing apparatus and method for reducing power consumption without deteriorating image are provided to analyze image information by using a histogram, and change the luminance of an image and adjust the saturation of the image by using an image class in the location information on a frame of a pixel determined according to the analyzed result, thereby reducing the power consumption without the deterioration of the image. A histogram generator(101) generates a luminance histogram indicating the luminance distribution of an input image. A class determiner(102) determines one of plural classes on the basis of the generated luminance histogram. A luminance converter(103) increases the luminance of the input image in correspondence to the determined class. A power converter(104) sets the size of the driving power of an image processing apparatus at a low level in inverse proportion to an increase of the luminance.
Abstract translation: 提供一种图像处理装置和方法，用于在不降低图像的情况下降低功耗，以通过使用直方图来分析图像信息，并且通过使用帧上的位置信息中的图像类别来改变图像的亮度并调整图像的饱和度 根据分析结果确定的像素，从而在不降低图像的情况下降低功耗。 直方图生成器（101）生成指示输入图像的亮度分布的亮度直方图。 类确定器（102）基于生成的亮度直方图来确定多个类中的一个。 亮度转换器（103）根据所确定的类别增加输入图像的亮度。 功率转换器（104）将图像处理装置的驱动功率的大小与亮度的增加成反比地设定在低电平。
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公开(公告)号：KR1020080050054A
公开(公告)日：2008-06-05
申请号：KR1020060120827
申请日：2006-12-01
Applicant: 삼성전자주식회사
CPC classification number: G06F7/725 , H04L9/0841 , H04L9/3013
Abstract: A sparse w-NAF key generating method, a processing method, an encrypting method using the same are provided to increase an encrypting speed by decreasing a scalar multiplication quantity and an exponential manipulation quantity. An encryption apparatus includes a key generator(100), an exponential calculator(200), and an encryption unit(300). The key generator generates an unsigned-w-NAF(Non-Adjacent Form) key. The w-NAF key is an odd number whose absolute value of a non-zero coefficient is smaller than 2^(w-1). A maximum number of non-zero coefficients of w consecutive coefficients is one. The exponential calculator performs an exponential manipulation by using the non-signed w-NAF key as an exponent. The encryption unit performs an encryption process on the exponential result from the exponential calculator.
Abstract translation: 提供稀疏的w-NAF密钥生成方法，处理方法，使用其的加密方法，以通过减少标量乘数和指数操纵量来增加加密速度。 加密装置包括密钥生成器（100），指数计算器（200）和加密单元（300）。 密钥生成器生成一个unsigned-w-NAF（Non-Adjacent Form）密钥。 w-NAF密钥是非零系数的绝对值小于2 ^（w-1）的奇数。 w个连续系数的非零系数的最大数量为1。 指数计算器通过使用非签名的w-NAF密钥作为指数来执行指数操纵。 加密单元对指数计算器的指数结果执行加密处理。
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