公开(公告)号：WO2015161641A1

公开(公告)日：2015-10-29

申请号：PCT/CN2014/090326

申请日：2014-11-05

Applicant: 上海先进半导体制造股份有限公司

Inventor： 徐元俊 ,  颜毅林 ,  薛维佳

IPC: B81B7/00 ,  B81B7/02 ,  B81C1/00 ,  B81C3/00

CPC classification number: B81B7/02 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/019 ,  B81C2201/0198 ,  B81C2201/053

Abstract: 一种复合腔体的形成方法及采用该方法形成的复合腔体，包括以下步骤：提供硅衬底（101）；在其正面形成氧化层；对氧化层作图形化，形成一个或多个凹槽（103），凹槽（103）的位置与待形成的小腔体（109）的位置对应；提供键合片（104），将其与图形化的氧化层键合，在硅衬底（101）与键合片（104）之间形成一个或多个密闭的微腔结构（105）；在键合片（104）的上方形成保护膜（106），并在硅衬底（101）的背面形成掩蔽层（107）；对掩蔽层（107）作图形化，掩蔽层（107）的图形与待形成的大腔体（108）的位置对应；以掩蔽层（107）为掩模，从背面刻蚀硅衬底（101）至其正面的氧化层，在硅衬底（101）中形成大腔体（108）；以掩蔽层（107）和氧化层为掩模，从背面穿过硅衬底（101）刻蚀键合片（104）至其上方的保护膜（106），在键合片（104）中形成一个或多个小腔体（109）。该复合腔体的形成方法很好地控制了复合腔体中小腔体（109）所在的半导体介质层的厚度均匀性。

公开(公告)号：WO2015012516A1

公开(公告)日：2015-01-29

申请号：PCT/KR2014/006294

申请日：2014-07-14

Applicant: 광주과학기술원

Inventor： 윤명한 ,  이세영

IPC: B82B3/00

CPC classification number: H01L29/0676 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/16

Abstract: 실리콘 기판 상에 플라스틱 입자들을 균일한 무작위 패턴으로 서로 이격하여 위치시키는 단계; 상기 플라스틱 입자들 사이에 촉매층을 형성하는 단계; 상기 플라스틱 입자들을 제거하는 단계; 상기 촉매층과 접촉하는 실리콘 기판 부위를 수직적으로 식각하는 단계; 및 상기 촉매층을 제거하는 단계를 포함하는, 실리콘 나노 와이어 어레이의 제조방법이 제공된다. 본 발명에 따르면, 공정이 단순하고 비용효과적이며 대면적 공정으로 대량생산이 가능하고 자원제한적인 장소에서도 나노 와이어의 제조가 가능하며, 나노 와이어의 구조를 독립적으로 제어할 수 있다.

Abstract translation: 提供一种制造硅纳米线阵列的方法，包括以下步骤：在硅衬底上以均匀和随机的图案将彼此分离的塑料颗粒定位; 在塑料颗粒之间形成催化剂层; 去除塑料颗粒; 垂直蚀刻接触催化剂层的硅衬底的部分; 并除去催化剂层。 本发明提供了一种简单且具有成本效益的方法，能够通过大的表面积处理进行批量生产，甚至能够在具有有限资源的位置制造纳米线，并且能够单独控制纳米线的结构。

公开(公告)号：WO2012108758A3

公开(公告)日：2012-10-11

申请号：PCT/MY2012000052

申请日：2012-03-13

Applicant: MIMOS BERHAD ,  SHENG DANIEL BIEN CHIA

Inventor： SHENG DANIEL BIEN CHIA

IPC: H01L21/74 ,  B81C1/00 ,  B81C99/00 ,  H01L21/306 ,  H01L21/76

CPC classification number: B81C1/00476 ,  B81B2203/0127 ,  B81C2201/0112 ,  B81C2201/0133

Abstract: The present invention provides a method to manufacture a silicon diaphragm, wherein an oxide layer (12) is embedded in the silicon substrate. (14) that acts as a support during the grinding and polishing processes. Further to that, the formation of the embedded oxide ( 12 ) is fully compatible with standard integrated circuit processing.

Abstract translation: 本发明提供了一种制造硅隔膜的方法，其中氧化物层（12）被嵌入在硅衬底中。 （14）在研磨和抛光过程中起支撑作用。 除此之外，嵌入式氧化物（12）的形成与标准集成电路处理完全兼容。

公开(公告)号：WO2012108758A2

公开(公告)日：2012-08-16

申请号：PCT/MY2012/000052

申请日：2012-03-13

Applicant: MIMOS BERHAD ,  SHENG, Daniel, Bien, Chia

Inventor： SHENG, Daniel, Bien, Chia

IPC: H01L21/74

CPC classification number: B81C1/00476 ,  B81B2203/0127 ,  B81C2201/0112 ,  B81C2201/0133

Abstract: The present invention provides a method to manufacture a silicon diaphragm, wherein an oxide layer (12) is embedded in the silicon substrate. (14) that acts as a support during the grinding and polishing processes. Further to that, the formation of the embedded oxide ( 12 ) is fully compatible with standard integrated circuit processing.

Abstract translation: 本发明提供一种制造硅膜片的方法，其中氧化物层（12）嵌入在硅衬底中。 （14），其在研磨和抛光过程中用作支撑体。 此外，嵌入式氧化物（12）的形成与标准集成电路处理完全兼容。

公开(公告)号：WO2008114252A3

公开(公告)日：2010-02-25

申请号：PCT/IL2008000374

申请日：2008-03-18

Applicant: NANOPASS TECHNOLOGIES LTD ,  YESHURUN YEHOSHUA

Inventor： YESHURUN YEHOSHUA

IPC: A61M37/00

CPC classification number: B81C1/00111 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C2201/0132 ,  B81C2201/0133 ,  Y10T428/13

Abstract: A method for forming a hollow microneedle structure includes processing the front side of a wafer (10) to form at least one microneedle (30) projecting from a substrate with a first part (18) of a through-bore, formed by a dry etching process, passing through the microneedle and through a part of a thickness of the substrate. The backside of the wafer (10) is also processed to form a second part (16) of the through-bore by a wet etching process.

Abstract translation: 一种用于形成中空微针结构的方法包括处理晶片（10）的前侧以形成至少一个从基板突出的微针（30），所述微针具有通过干蚀刻形成的通孔的第一部分（18） 过程中，穿过微针并穿过衬底的厚度的一部分。 晶片（10）的背面也被处理以通过湿蚀刻工艺形成通孔的第二部分（16）。

公开(公告)号：WO2007027907A3

公开(公告)日：2009-05-07

申请号：PCT/US2006034051

申请日：2006-09-01

Applicant: UNIV COLUMBIA ,  VON GUTFELD ROBERT J ,  WEST ALAN C

Inventor： VON GUTFELD ROBERT J ,  WEST ALAN C

IPC: C23F1/00 ,  C25F3/02 ,  C25F7/00

CPC classification number: C25F3/02 ,  B81C1/00571 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/0142 ,  C23F1/02 ,  C23F1/08 ,  H05K3/068 ,  H05K2203/1105 ,  H05K2203/1115

Abstract: Systems and methods for etching topographic features in non- crystalline or metallic substrates are provided. A protective material is placed and patterned on a surface of the substrate to define exposed and protected regions of the substrate for etching in a liquid etchant having etching rates that are thermally activated. A nonuniform temperature profile is imposed on the substrate so that the temperatures and hence the etching rates at surfaces in the exposed regions are higher than those in the protected regions. Arrangements for imposing the nonuniform temperature profile include heating designated portions of the substrate with light radiation. Alternatively, the non-uniform temperature profile is developed as etching progresses by passing current pulses through the substrate in a manner that causes geometrically non-uniform heating of the substrate.

Abstract translation: 提供用于蚀刻非晶体或金属基底中的地形特征的系统和方法。 保护材料被放置并图案化在衬底的表面上以限定衬底的暴露和保护区域，以在具有热激活蚀刻速率的液体蚀刻剂中蚀刻。 对基板施加不均匀的温度曲线，使得暴露区域中的表面的温度和蚀刻速率高于受保护区域中的温度。 施加不均匀温度分布的布置包括用光辐射加热衬底的指定部分。 或者，当通过使电流脉冲以导致衬底的几何不均匀加热的方式通过衬底时蚀刻进行蚀刻而开发不均匀的温度分布。

公开(公告)号：WO2007027907A2

公开(公告)日：2007-03-08

申请号：PCT/US2006/034051

申请日：2006-09-01

Applicant: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK ,  VON GUTFELD, Robert, J. ,  WEST, Alan, C.

Inventor： VON GUTFELD, Robert, J. ,  WEST, Alan, C.

IPC: B05D5/04

CPC classification number: C25F3/02 ,  B81C1/00571 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/0142 ,  C23F1/02 ,  C23F1/08 ,  H05K3/068 ,  H05K2203/1105 ,  H05K2203/1115

Abstract: Systems and methods for etching topographic features in non- crystalline or metallic substrates are provided. A protective material is placed and patterned on a surface of the substrate to define exposed and protected regions of the substrate for etching in a liquid etchant having etching rates that are thermally activated. A nonuniform temperature profile is imposed on the substrate so that the temperatures and hence the etching rates at surfaces in the exposed regions are higher than those in the protected regions. Arrangements for imposing the nonuniform temperature profile include heating designated portions of the substrate with light radiation. Alternatively, the non-uniform temperature profile is developed as etching progresses by passing current pulses through the substrate in a manner that causes geometrically non-uniform heating of the substrate.

Abstract translation: 提供用于蚀刻非晶体或金属基底中的地形特征的系统和方法。 保护材料被放置并图案化在衬底的表面上以限定衬底的暴露和保护区域，以在具有热激活蚀刻速率的液体蚀刻剂中蚀刻。 对基板施加不均匀的温度曲线，使得暴露区域中的表面的温度和蚀刻速率高于受保护区域中的温度。 施加不均匀温度分布的布置包括用光辐射加热衬底的指定部分。 或者，当通过使电流脉冲以导致衬底的几何不均匀加热的方式通过衬底时蚀刻进行蚀刻而开发不均匀的温度分布。

公开(公告)号：WO2005061377A1

公开(公告)日：2005-07-07

申请号：PCT/NL2004/000902

申请日：2004-12-23

Applicant: STICHTING VOOR DE TECHNISCHE WETENSCHAPPEN ,  SARAJLIC, Edin ,  BERENSCHOT, Johan, Willem

Inventor： SARAJLIC, Edin ,  BERENSCHOT, Johan, Willem

IPC: B81C1/00

CPC classification number: B81C1/00103 ,  B81B2201/12 ,  B81C99/008 ,  B81C2201/0133

Abstract: The invention relates to a method for fabricating a nanostructure, comprising the selection of a carrier for the material of the nanostructure during the formation of the same, wherein the carrier is provided with a shape that corresponds with the final shape of the nanostructure, and wherein the nanostructure material is applied on the carrier in a predetermined thickness and following the shape of the carrier. The material is removed substantially isotropically from the side facing away from the carrier, with the result that material that is not removed is left on a place or places determined by the shape of the carrier.

Abstract translation: 本发明涉及一种制造纳米结构的方法，包括在其形成过程中选择纳米结构材料的载体，其中载体具有对应于纳米结构的最终形状的形状，并且其中 纳米结构材料以预定厚度施加在载体上并且遵循载体的形状。 从背离载体的一侧基本上各向异性地去除材料，结果是未被去除的材料留在由载体形状确定的位置或位置上。

公开(公告)号：WO2003034469A2

公开(公告)日：2003-04-24

申请号：PCT/US2002/032694

申请日：2002-10-15

Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGAN ,  NAJAFI, Khalil ,  TSUNG-KUAN, Chou

Inventor： NAJAFI, Khalil ,  TSUNG-KUAN, Chou

IPC: H01L

CPC classification number: B81C1/00103 ,  B81B2203/0392 ,  B81C1/00547 ,  B81C1/00626 ,  B81C2201/0104 ,  B81C2201/0132 ,  B81C2201/0133 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3083 ,  Y10S438/974 ,  Y10S438/977

Abstract: A method of fabricating a device having a desired non-planar surface or profile and device produced thereby are provided. A silicon wafer is first coated with silicon nitride, patterned, and DRIE to obtain the desired etch profile. Silicon pillars between trenches are then etched using an isotropic wet etch, resulting in a curved well. The wafer is then oxidized to ∼2 µm to smooth the surface of the well, and to protect the well from an ensuring planarization process. The nitride is then selectively removed, and the wafer surface is planarized by removing the Si left in the field regions using either a maskless DRIE or CMP. Finally, the oxide is etched away to produce a wafer with a curved surface.

Abstract translation: 提供一种制造具有期望的非平面表面或轮廓的装置的方法以及由此制造的装置。 硅晶片首先用氮化硅，图案化和DRIE涂覆以获得所需的蚀刻轮廓。 然后使用各向同性的湿蚀刻蚀刻沟槽之间的硅柱，得到弯曲的井。 然后将晶片氧化成类似于2微米，以平滑井的表面，并保护井免受确保的平坦化过程。 然后选择性地去除氮化物，并且通过使用无掩模DRIE或CMP去除场区域中留下的Si来平坦化晶片表面。 最后，将氧化物蚀刻掉以产生具有弯曲表面的晶片。

公开(公告)号：WO2003016919A1

公开(公告)日：2003-02-27

申请号：PCT/US2002/026440

申请日：2002-08-20

Applicant: HONEYWELL INTERNATIONAL INC.

Inventor： ESKRIDGE, Mark

IPC: G01P15/08

CPC classification number: G01P15/125 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C2201/0133 ,  G01P15/08 ,  G01P15/097 ,  G01P2015/0828 ,  G01P2015/0831

Abstract: An apparatus and method for suspending a movable structure form a support structure wherein first and second flat and thin arcuately shaped flexures are formed having spaced apart substantially planar and parallel opposing surfaces, each of the first and second flexures being structured for connection between a support structure and a movable structure to be suspended from the support structure and being aligned along a common axis of rotation between the support structure and the movable structure. Two half-circular flexures may be arranged to form a circular shape or may be interconnected in their middle region to form a single x-shaped suspension member.

Abstract translation: 一种用于将可移动结构悬挂形成支撑结构的装置和方法，其中形成具有间隔开的基本上平坦且平行的相对表面的第一和第二扁平和细弧形弯曲的弯曲部，所述第一和第二挠曲中的每一个构造成用于在支撑结构 以及可移动结构，其从所述支撑结构悬挂并且沿着所述支撑结构和所述可移动结构之间的公共旋转轴线对准。 两个半圆形弯曲部可以被布置成形成圆形形状，或者可以在它们的中间区域相互连接以形成单个x形悬挂构件。