LIQUID ATOMIZATION METHODS AND DEVICES

    公开(公告)号:CA2385324A1

    公开(公告)日:2001-03-29

    申请号:CA2385324

    申请日:2000-09-21

    Abstract: The present invention involves controlled atomization of liquids for various applications such as particle/droplet seeding for laser-based measurements o f flow velocity, temperature, and concentration; flame and plasma based elemental analysis; nano-powder production; spray drying for generation of small-sized particles; nebulizers in the production of sub-micron size droplets and for atomizing fuel for use in combustion chambers. In these and other atomizer applications the control of droplet and/or particle size is very critical. In some applications extremely small droplets are preferred (less than a micron), while in others, droplet diameters on the scale of several microns are required. The present invention has the flexibility of forming droplets within a particular range of diameters, wherein not only th e size of the average droplet can be adjusted, but the range of sizes may be adjusted as well. The atomizer (4) itself is in the form of a heated tube (4 4) having an inlet end (48) and an outlet end (50). As liquid travels through t he tube it is heated and upon exiting the tube and entering a reduced pressure area the liquid atomizes to form very fine droplets. By electrically heating the tube by passing a current therethrough, the heating adjustment can be performed on-the-fly, allowing droplet size adjustment during operation of t he atomizer. Several different embodiments of the atomization device are disclosed.

    EPITAXIAL THIN FILMS
    17.
    发明专利

    公开(公告)号:CA2359710A1

    公开(公告)日:2000-07-20

    申请号:CA2359710

    申请日:2000-01-12

    Abstract: Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separati on membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin fil ms for electrolytes and electrode formation in SOFCs results in densification f or pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. Thes e semipermeable membranes are formed by high-quality, dense, gas-tight, pinhol e free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are al so taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for t he formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

    CORROSION-RESISTANT MULTILAYER COATINGS

    公开(公告)号:CA2296505A1

    公开(公告)日:1999-11-18

    申请号:CA2296505

    申请日:1999-05-13

    Abstract: A corrosion-resistant coating for a substrate is described. The corrosionresistant coating comprises a first distinct layer of a first composition disposed over the substrate, wherein the first distinct layer has a thickness that is not greater than about 10 microns, and a second distinct layer of a second composition disposed over the first distinct layer, wherein the second distinct layer has a thickness that is not greater than about 10 microns an d either the first distinct layer or the second distinct layer is corrosionresistant. Preferably, the thickness of each distinct layer is less than about 1 or 2 microns, more preferably, less than about 0.4 microns. The coating may comprise additional layers. Corrosion-resistant articles, methods of protecting articles, and methods of depositing corrosion-resistant coatings are also described.

    VARIABLE CAPACITORS, COMPOSITE MATERIALS
    20.
    发明申请
    VARIABLE CAPACITORS, COMPOSITE MATERIALS 审中-公开
    可变电容器,复合材料

    公开(公告)号:WO2003088358A1

    公开(公告)日:2003-10-23

    申请号:PCT/US2002/011133

    申请日:2002-04-09

    CPC classification number: H01G7/06

    Abstract: Tunable capacitors (10, 20, 30, 40) have a dielectric material (16, 26, 36, 42) between electrodes, which dielectric material comprises an insulating material (17, 27, 37, 42) and electrically conductive material, (18, 28, 38, 48) e.g., conductive nanoparticulates, dispersed therein. In certain cases, enhanced tune-ability is achieved when the dielectric material comprises elongated nanoparticulates (38). Further enhanced tune-ability may be achieved by aligning elongated particulates in an electrode-to-electrode direction. Nanoparticulates may be produced by heating passivated nanoparticulates. Passivated nanoparticulates may be covalently bound within a polymeric matrix. High bias potential device structures can be formed with preferential mobilities.

    Abstract translation: 可调电容器(10,20,30,40)在电极之间具有介电材料(16,26,36,42),该电介质材料包括绝缘材料(17,27,37,42)和导电材料(18 ,28,38,48),例如,分散在其中的导电纳米颗粒。 在某些情况下,当介电材料包括细长的纳米颗粒(38)时,可实现增强的调谐能力。 可以通过使电极对电极方向上的细长颗粒对准来实现进一步增强的调谐能力。 纳米微粒可以通过加热钝化的纳米颗粒来生产。 钝化的纳米颗粒可以共价结合在聚合物基质内。 可以以优先的迁移率形成高偏置电位器件结构。

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