公开(公告)号：EP2539930A2

公开(公告)日：2013-01-02

申请号：EP11713021.1

申请日：2011-02-24

Applicant: SPP Process Technology Systems UK Limited

Inventor： DITIZIO, Robert

IPC: H01L21/768 ,  B81B1/00

CPC classification number: H01L21/76898 ,  B81B2207/07 ,  B81C1/00087 ,  B81C2201/0112 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3065 ,  H01L21/30655

Abstract: Vias are formed in a substrate using an etch process that forms an undercut profile below the mask layer. The vias are coated with a conformal insulating layer and an etch process is applied to the structures to remove the insulating layer from horizontal surfaces while leaving the insulating layers on the vertical sidewalls of the vias. The top regions of the vias are protected during the etchback process by the undercut hardmask.

公开(公告)号：EP2044609B1

公开(公告)日：2011-01-12

申请号：EP07766170.0

申请日：2007-07-06

Applicant: SPP Process Technology Systems UK Limited

Inventor： PROUDFOOT, Gary ,  GEORGE, Christopher, David ,  LIMA, Paulo, Edurado ,  GREEN, Gordon, Robert ,  TROWELL, Robert, Kenneth

IPC: H01J37/305 ,  H01J37/317 ,  C23C14/46 ,  H01J37/08 ,  H01J27/04 ,  H01J27/16 ,  H01J37/20

CPC classification number: C23C14/46 ,  H01J27/18 ,  H01J37/20 ,  H01J37/3178 ,  H01J2237/024 ,  H01J2237/3146

Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).

公开(公告)号：EP2237309A2

公开(公告)日：2010-10-06

申请号：EP10154656.2

申请日：2010-02-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Ansell, Oliver ,  Barrass, Anthony ,  Bennett, Paul ,  Tossell, David

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

Abstract: Apparatus for chemically etching a Workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a Workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the Workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.

Abstract translation: 用于化学蚀刻工件的设备包括用于接收处理气体并具有用于抽取废气的泵送端口的室，以及位于泵送端口上游的室中的工件支撑件。 腔室还包括位于泵送端口的上游并且在工件支撑件下游的子室，并且子室包括与窗口相邻的窗口和激发源，用于在废气样本中产生等离子体 产生可以通过窗口监测的光发射。

公开(公告)号：EP2362003B1

公开(公告)日：2017-07-05

申请号：EP10275131.0

申请日：2010-12-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Giles, Katherine ,  Price, Andrew ,  Burgess, Stephen Robert ,  Archard, Daniel Thomas

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

公开(公告)号：EP2044610B1

公开(公告)日：2012-11-28

申请号：EP07733491.0

申请日：2007-07-06

Applicant: SPP Process Technology Systems UK Limited

Inventor： PROUDFOOT, Gary ,  GEORGE, Christopher, David ,  LIMA, Paulo, Eduardo

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32623

公开(公告)号：EP2044608B1

公开(公告)日：2012-05-02

申请号：EP07766199.9

申请日：2007-07-12

Applicant: SPP Process Technology Systems UK Limited

Inventor： PROUDFOOT, Gary ,  GREEN, Gordon Robert ,  TROWELL, Robert Kenneth

IPC: H01J27/18 ,  H01J37/08

CPC classification number: H01J27/18 ,  H01J27/024 ,  H01J37/04 ,  H01J37/08 ,  H01J2237/04735 ,  H01J2237/083

Abstract: This invention relates to an Ion gun (10) which comprises of plasma generator (11) driven from an RF source (12), a plasma or source chamber (13), having an outlet (14), across which is mounted an accelerator grid (15). The accelerator grid (15) comprises four individual grids. The first grid (16), which is closest to the outlet (14), is maintained at a positive voltage by a DC source (16a), the second grid (17) is maintained strongly negative by DC source (17a). The third grid (18) is maintained at a negative voltage, which is much lower than that of the second grid (17), by DC source (18a) and the fourth grid is grounded. Means of mounting these grids are also described.

公开(公告)号：EP2362003A2

公开(公告)日：2011-08-31

申请号：EP10275131.0

申请日：2010-12-20

Applicant: SPP Process Technology Systems UK Limited

Inventor： Giles, Katherine ,  Price, Andrew ,  Burgess, Stephen Robert ,  Archard, Daniel Thomas

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

Abstract: This invention relates to a method of depositing an inorganic SiO 2 film at temperatures below 250°C using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O 2 , or a source thereof, as precursors, with an O 2 /TEOS ratio of between 15:1 and 25:1.

公开(公告)号：EP2237309A3

公开(公告)日：2011-08-03

申请号：EP10154656.2

申请日：2010-02-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Ansell, Oliver ,  Barrass, Anthony ,  Bennett, Paul ,  Tossell, David

IPC: H01L21/00

CPC classification number: H01L21/67253 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299

Abstract: Apparatus for chemically etching a Workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a Workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the Workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.

公开(公告)号：EP2210966B1

公开(公告)日：2011-07-13

申请号：EP10275006.4

申请日：2010-01-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Carruthers, Mark ,  Burgess, Stephen ,  Wilby, Anthony ,  Rastogi, Amit ,  Rich, Paul ,  Rimmer, Nicholas

IPC: C23C14/35

CPC classification number: C23C14/046 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873

公开(公告)号：EP2210966A1

公开(公告)日：2010-07-28

申请号：EP10275006.4

申请日：2010-01-25

Applicant: SPP Process Technology Systems UK Limited

Inventor： Carruthers, Mark ,  Burgess, Stephen ,  Wilby, Anthony ,  Rastogi, Amit ,  Rich, Paul ,  Rimmer, Nicholas

IPC: C23C14/35

CPC classification number: C23C14/046 ,  C23C14/35 ,  H01J37/3405 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873

Abstract: This invention consists of a method of plasma vapour deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilising a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.

Abstract translation: 本发明包括将金属等离子体气相沉积到工件凹陷中的方法。 该方法通过利用Ar和He和/或Ne的混合物作为溅射气体，以He和/或Ne：Ar的比例至少约为 10：1。