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公开(公告)号：KR1020060113880A
公开(公告)日：2006-11-03
申请号：KR1020060104509
申请日：2006-10-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02271 , H01L21/3144 , H01L21/31662 , H01L21/3185
Abstract: A method and an apparatus for forming a silicon oxide film are provided to increase uniformity of a film thickness of an oxide film by performing a dry oxidation process on an object to be treated. An apparatus for forming a silicon oxide film includes a reaction chamber(302), a reaction chamber heater(312), a reaction chamber pressure adjuster, a first supply unit(313), a second supply unit(314), a gas heater(315), and a controller(321). The reaction chamber receives an object to be treated. The reaction chamber heater heats the reaction chamber up to a predetermined temperature. The reaction chamber pressure adjuster adjusts a pressure of the reaction chamber to a predetermined value. The first supply unit supplies silane-based gas into the reaction chamber. The second supply unit supplies N2O into the reaction chamber. The gas heater is arranged on the second supply unit and heats up the N2O up to a predetermined temperature. The controller heats up the N2O inside the reaction chamber to a temperature of 700‹C.
Abstract translation: 提供一种用于形成氧化硅膜的方法和装置，以通过对被处理物进行干式氧化处理来提高氧化膜的膜厚均匀性。 用于形成氧化硅膜的装置包括反应室（302），反应室加热器（312），反应室压力调节器，第一供应单元（313），第二供应单元（314），气体加热器 315）和控制器（321）。 反应室接收待处理物体。 反应室加热器将反应室加热至预定温度。 反应室压力调节器将反应室的压力调节到预定值。 第一供应单元将硅烷基气体供应到反应室中。 第二供应单元向反应室供应N2O。 气体加热器布置在第二供应单元上，并将N2O加热至预定温度。 控制器将反应室内的N2O加热至700℃的温度。
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公开(公告)号：KR1020060113879A
公开(公告)日：2006-11-03
申请号：KR1020060104505
申请日：2006-10-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02271 , H01L21/3144 , H01L21/31662 , H01L21/3185
Abstract: A method and an apparatus for forming a silicon nitride film are provided to increase uniformity of a film thickness of an oxide film by forming the silicon nitride film at a low temperature. An apparatus of forming a silicon nitride film includes a reaction chamber(202), a reaction chamber heater(212), a reaction chamber pressure adjuster, a first supply unit(213), a second supply unit(214), a gas heater(215), and a controller(221). The reaction chamber receives an object to be treated. The reaction chamber heater heats the reaction chamber up to a predetermined temperature. The reaction chamber pressure adjuster adjusts a pressure of the reaction chamber to a predetermined value. The first supply unit supplies silane-based gas into the reaction chamber. The second supply unit supplies trimethylamine into the reaction chamber. The gas heater is arranged on the second supply unit and heats up the trimethylamine up to a predetermined temperature. The controller heats up the trimethylamine inside the reaction chamber to a temperature for generating nitrogen.
Abstract translation: 提供了一种用于形成氮化硅膜的方法和装置，以通过在低温下形成氮化硅膜来提高氧化膜的膜厚度的均匀性。 形成氮化硅膜的装置包括反应室（202），反应室加热器（212），反应室压力调节器，第一供应单元（213），第二供应单元（214），气体加热器 215）和控制器（221）。 反应室接收待处理物体。 反应室加热器将反应室加热至预定温度。 反应室压力调节器将反应室的压力调节到预定值。 第一供应单元将硅烷基气体供应到反应室中。 第二供应单元向反应室供应三甲胺。 气体加热器布置在第二供应单元上，并将三甲胺加热至预定温度。 控制器将反应室内的三甲胺加热至产生氮气的温度。
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公开(公告)号：KR1020060113878A
公开(公告)日：2006-11-03
申请号：KR1020060104499
申请日：2006-10-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/02271 , H01L21/3144 , H01L21/31662 , H01L21/3185
Abstract: A method and an apparatus of forming a silicon oxide film are provided to increase a film forming speed by reducing a thickness of a nitride film and forming the nitride film at a low temperature. An apparatus for forming a silicon oxide film includes a reaction chamber(131), a reaction chamber heater(132), a supply unit(105), and a gas heater(102). The reaction chamber receives an object to be treated. A silicon layer is formed at least on a surface of the object to be treated. The reaction chamber heater raises a temperature of the reaction chamber to a predetermined temperature. The supply unit supplies gas, which is made of hydrogen and chlorine, and process gas, which contains oxygen, into the reaction chamber. The gas heater is arranged on the supply unit and heats up the process gas before the process gas is supplied into the reaction chamber, to generate humidity.
Abstract translation: 提供一种形成氧化硅膜的方法和装置，以通过减小氮化物膜的厚度并在低温下形成氮化物膜来提高成膜速度。 用于形成氧化硅膜的装置包括反应室（131），反应室加热器（132），供应单元（105）和气体加热器（102）。 反应室接收待处理物体。 至少在待处理物体的表面上形成硅层。 反应室加热器将反应室的温度升高到预定温度。 供应单元将由氢和氯制成的气体以及含氧的处理气体供入反应室。 气体加热器布置在供应单元上，并且在将工艺气体供应到反应室中之前加热处理气体，以产生湿度。
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公开(公告)号：KR101862907B1
公开(公告)日：2018-05-30
申请号：KR1020150065193
申请日：2015-05-11
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: C23C16/34 , C23C16/06 , C23C16/405 , C23C16/45525 , C23C16/45551 , C23C16/45574 , C23C16/4584
Abstract: 기판(W) 상에 TiN의연속막을성막하는성막방법이며, 상기기판상에 TiO의연속막을성막하는공정과, 상기 TiO의연속막상에, 상기 TiO막보다도두꺼운 TiN의연속막을성막하는공정을갖는다.
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公开(公告)号：KR1020170072805A
公开(公告)日：2017-06-27
申请号：KR1020160170241
申请日：2016-12-14
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 구마가이다케시
IPC: H01L21/02 , H01L21/205 , H01L21/324 , H01L21/687 , H01L21/67 , H05H1/46
CPC classification number: C23C16/45544 , C23C16/045 , C23C16/405 , C23C16/45534 , C23C16/45536 , C23C16/45551 , C23C16/46 , C23C16/50 , H01J37/3244 , H01J37/32513 , H01J37/32651 , H01J37/32715 , H01J37/32807
Abstract: 기판의표면에형성되어있는오목패턴에저면측으로부터막을매립하는성막방법이며, 상기기판의표면및 상기오목패턴의상부에할로겐함유가스를공급하여흡착시켜, 흡착저해기를형성하는할로겐함유가스공급공정과, 상기오목패턴을포함하는상기기판의표면에제1 반응가스를공급하여, 상기기판의표면의상기흡착저해기에흡착을저해되지않는영역에상기제1 반응가스를흡착시키는제1 반응가스공급공정과, 상기오목패턴을포함하는상기기판의표면에상기제1 반응가스와반응하는제2 반응가스를공급하여, 상기기판의표면에흡착된상기제1 반응가스와상기제2 반응가스의반응생성물을생성함으로써, 해당반응생성물의분자층을퇴적시키는제2 반응가스공급공정을갖는다.
Abstract translation: 用于从形成在基板的表面上的凹陷图案的底侧嵌入膜的成膜方法，吸附通过供给含氧气体到上表面上的卤素灯和基板，形成吸附抑制的含卤素气体供给工序的凹陷图案 并且，供给第一反应气体到该衬底包括凹陷图案，吸附在第一反应气体至该区域不抑制吸附的第一反应气体的表面到所述衬底的表面的吸附剂抑制 步骤中，第二反应气体，所述第一反应气体的反应和吸附在基板的表面上的第2反应气体到与第一反应气体反应，从而将基片的表面包括凹陷图案 以及第二反应气体供应步骤，通过产生产物来沉积反应产物的分子层。
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Patent Agency Ranking
公开(公告)号：KR101595148B1
公开(公告)日：2016-02-17
申请号：KR1020120153211
申请日：2012-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/44 , C23C16/50 , H01L21/205
CPC classification number: C23C16/45536 , C23C14/00 , C23C16/045 , C23C16/402 , C23C16/45519 , C23C16/45529 , C23C16/45551 , H01L21/02164 , H01L21/0228 , H01L21/30 , H01L21/76224
Abstract: 오목부가형성된기판상에, 수산기에흡착되기쉬운제1 반응가스와, 당해제1 반응가스와반응하는제2 반응가스의반응생성물에의한막을성막하는성막방법이며, 상기기판의상기오목부의깊이방향에있어서의수산기의흡착분포를제어하는스텝과, 상기수산기가흡착된상기기판상에상기제1 반응가스를공급하는스텝과, 상기제1 반응가스가흡착된상기기판상에상기제2 반응가스를공급하는스텝을포함하는성막방법.
Abstract translation: 一种成膜方法，用于在容易吸附在羟基上的第一反应气体和与第一反应气体反应的第二反应气体的反应产物的膜上形成凹部， 该方法包括以下步骤：控制第一反应气体中羟基的吸附分布;将第一反应气体供应到其上吸附有羟基的基板上; 以及将沉积气体供应到沉积室的步骤。
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公开(公告)号：KR1020150129618A
公开(公告)日：2015-11-20
申请号：KR1020150065193
申请日：2015-05-11
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: C23C16/34 , C23C16/06 , C23C16/405 , C23C16/45525 , C23C16/45551 , C23C16/45574 , C23C16/4584
Abstract: 기판(W) 상에 TiN의연속막을성막하는성막방법이며, 상기기판상에 TiO의연속막을성막하는공정과, 상기 TiO의연속막상에, 상기 TiO막보다도두꺼운 TiN의연속막을성막하는공정을갖는다.
Abstract translation: 本发明涉及一种在基板（W）上形成TiN连续膜的成膜方法，该方法包括以下工序：在基板上形成连续的TiO_2膜; 并且在TiO_2的连续膜上形成比TiO_2膜更厚的TiN连续膜。 该方法缩短成膜延迟时间，并且即使在形成厚度为8nm或更薄的TiN膜时也可以形成连续膜。
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公开(公告)号：KR1020150031207A
公开(公告)日：2015-03-23
申请号：KR1020140121108
申请日：2014-09-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/316
CPC classification number: H01L21/02271 , C23C16/402 , C23C16/45551 , H01L21/02164 , H01L21/02219 , H01L21/0228
Abstract: 본 발명은 실리콘 산화막의 제조 방법을 제공하는 것이다. 상기 방법에서는, 표면에 금속막을 갖는 기판을 반응 용기 내에 설치하고, 상기 기판을 설치한 후, 수소 가스 공급 수단에 의해, 상기 반응 용기 내에 수소 가스의 공급을 개시한다. 수소 가스의 공급 후, 산화 가스 공급 수단에 의해, 상기 반응 용기 내에 산화 가스의 공급을 개시함과 함께, 실리콘 함유 가스 공급 수단에 의해, 상기 반응 용기 내에 실리콘 함유 가스의 공급을 개시한다.
Abstract translation: 本发明提供一种能够抑制形成在基板表面上的金属膜的氧化的氧化硅膜的制造方法。 在该方法中，将表面具有金属膜的基板安装在反应容器的内部，在安装基板之后，通过氢气供给单元将氢气供给到反应容器的内部。 氢气供给之后，通过氧化气体供给装置开始向反应容器的内部供给氧化气体，通过含硅气体开始向反应容器的内部供给含硅气体 供应手段
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公开(公告)号：KR1020150031186A
公开(公告)日：2015-03-23
申请号：KR1020140119032
申请日：2014-09-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/316 , H01L21/02
CPC classification number: H01L21/02164 , C23C16/402 , C23C16/45523 , C23C16/4584 , H01L21/02219 , H01L21/02271
Abstract: The present invention provides a method for fabricating a silicon oxide film by using a film forming apparatus comprising a rotary table; a first gas supply unit for supplying a first gas toward the top of the rotary table in a first processing area; and a second gas supply unit for supplying a second gas to the top of the rotary table in a second processing area. The method comprises: continuously supplying a first gas containing silicon from the first gas supply unit; continuously supplying a hydrogen gas, which is a second gas, and an oxidizing gas from the second gas supply unit; forcing the first gas to be absorbed into a substrate stacked on the rotary table in the first processing area while rotating the rotary table; and making the first gas absorbed into the surface of the substrate and the second gas supplied to the second process area react in the second processing area.
Abstract translation: 本发明提供一种通过使用包括旋转台的成膜设备来制造氧化硅膜的方法; 第一气体供给单元，用于在第一处理区域中向旋转台的顶部供给第一气体; 以及第二气体供给单元，用于在第二处理区域中将第二气体供应到旋转台的顶部。 该方法包括：从第一气体供应单元连续供应含硅的第一气体; 从第二气体供给单元连续供给作为第二气体的氢气和氧化气体; 在旋转所述旋转台的同时，使所述第一气体被吸收到所述第一处理区域中的堆叠在所述旋转台上的基板中; 并且使第一气体吸收到基板的表面中，并且供应到第二处理区域的第二气体在第二处理区域中反应。
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公开(公告)号：KR1020140005817A
公开(公告)日：2014-01-15
申请号：KR1020130078706
申请日：2013-07-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02263 , C23C16/402 , C23C16/4554 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/0228
Abstract: According to the present invention, a film forming method includes adsorbing a silicon-containing gas to a substrate having a recess part by supplying the silicon-containing and forming a silicon oxide layer on the substrate by oxidizing the silicon-containing gas with an oxidation gas. Because a gas phase temperature in the upper part of the substrate to which the silicon-containing gas is supplied can be low by using an inert gas which is supplied from a separation region separating an oxidation gas supply part from a silicon-containing gas supply part even if the substrate is heated in a temperature which is higher than a temperature of decomposing the silicon-containing gas, the silicon-containing gas can be absorbed onto the substrate without decomposition in a gas phase. [Reference numerals] (100) Control part; (101) Memory part; (102) Medium; (AA,BB,CC,DD) N_2 gas
Abstract translation: 根据本发明，一种成膜方法包括：通过供给含硅并将含硅气体氧化成含氧气体的氧化气体，将含硅气体吸附在具有凹部的基板上，并在基板上形成氧化硅层 。 由于通过使用从分离氧化气体供给部分的分离区域与含硅气体供给部分供给的惰性气体，在供给含硅气体的基板的上部的气相温度低， 即使在高于分解含硅气体的温度的温度下加热基板，也可以将含硅气体吸收到基板上而不会在气相中分解。 （附图标记）（100）控制部; （101）记忆部分; （102）中等; （AA，BB，CC，DD）N_2气体
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